BY 509
Abstract: IN 319 TAG 503 ptfe washer
Text: FEATURES PANEL INDICATOR LEDs - Ø6.35mm Mounting 319 SERIES Domed fresnel lens styling for wide viewing angle PACK QUANTITY = 20 PIECES Flying lead terminations and low current versions available Sealed to IP40 Supplied complete with mounting hardware Product illustrated 319-930-04
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s76-15
230Vac
24Vdc
BY 509
IN 319
TAG 503
ptfe washer
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Untitled
Abstract: No abstract text available
Text: 319 series features • Ø6.35mm mounting • Domed fresnel lens styling for wide viewing angle • Colour diffused lens • Flying lead terminations available • Sealed to IP40 • Supplied complete with mounting hardware • Low current versions available
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9080000
Abstract: 319 series diode
Text: 319 series features • Ø6.35mm mounting • Domed fresnel lens styling for wide viewing angle • Colour diffused lens • Flying lead terminations available • Sealed to IP40 • Supplied complete with mounting hardware • Low current versions available
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2700ational
9080000
319 series diode
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Untitled
Abstract: No abstract text available
Text: 319 Ultra-slim Photoelectric Sensor Amplifier Built-in EX-10 SERIES Ver.2 FIBER SENSORS Related Information •■General terms and conditions. F-17 Glossary of terms / General precautions. P.1359~ / P.1405 ■■Sensor selection guide. P.283~
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EX-10
EX-15â
CX-400
EX-10
EX-20
EX-30
EX-40
CX-440
EQ-30
EQ-500
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Untitled
Abstract: No abstract text available
Text: 319 series features • Ø6.35mm mounting • Domed fresnel lens styling for wide viewing angle • Colour diffused lens • Flying lead terminations available • Sealed to IP40 • Supplied complete with mounting hardware • Low current versions available
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2700ational
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1000 volt mosfet
Abstract: mosfet gate source voltage 20v SHD230202
Text: SENSITRON SEMICONDUCTOR SHD230202 TECHNICAL DATA DATA SHEET 319, REV. A HERMETIC POWER MOSFET N-CHANNEL QUAD FEATURES: 100 Volt, 0.35 Ohm, 6.2A MOSFET Fast Switching Low RDS on Equivalent to IRF120 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
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SHD230202
IRF120
030Typ
LCC-28T
LCC-28T
1000 volt mosfet
mosfet gate source voltage 20v
SHD230202
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SHD230202
Abstract: IRF120 SHD2302
Text: SENSITRON SEMICONDUCTOR SHD230202 TECHNICAL DATA DATA SHEET 319, REV. A HERMETIC POWER MOSFET N-CHANNEL QUAD FEATURES: 100 Volt, 0.35 Ohm, 6.2A MOSFET Fast Switching Low RDS on Equivalent to IRF120 Series MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.
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SHD230202
IRF120
250mA
SHD230202
SHD2302
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E223026
Abstract: SMD BR 17
Text: MDE Semiconductor, Inc. Single Minded Focus on Surge Suppression Solutions October 28, 2005 To whom it may concern: Product Description: Transient Voltage Suppressors TVS Diodes Manufacture / Vendor: MDE Semiconductor, Inc. LEAD FREE COMPONENTS 1. Axial lead Device: Plating component is 100% Sn, meeting the lead free standards.
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2002/95/EC
P-600
30KP30A
30KP288A
30KW30A
30KW288A
30KPA30A
30KPA288A
E223026
SMD BR 17
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MIL-STD-2036
Abstract: 1.5ke series 0.4kw SEN-5439 SEN-5425 MIL-STD-1399 AE-POWER 40KV LSP11B-320 SEN-5282
Text: " #!$ % ! ! & '#!$ % *+ ! +, - . - ( ( / +, - Transient Voltage Suppressors Sensitron www.sensitron.com/tvsproducts.htm Sensitron’s Transient Voltage Suppressors Product Line includes: ¾ Hermetic TVS Diodes ¾ Lightning Protection Sensitron’s TVS’s are characterized by:
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MIL-STD-1275
MIL-STD-1399
MIL-STD-2036
MIL-STD704/A
DOD-STD-1399
UL-94V0
MIL-STD-2036
1.5ke series
0.4kw
SEN-5439
SEN-5425
MIL-STD-1399
AE-POWER
40KV
LSP11B-320
SEN-5282
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1N4007 DIODE
Abstract: diode 1N4007 anode terminal 1N4004 diode transistor da 307 1N4004 1N4007 AZ986 AZ986-1C-12DC2R1 24 volt 10 amp relay
Text: AZ986 40 AMP 280-ISO AUTOMOTIVE RELAY FEATURES • • • • • • 40 Amp contact rating High operating temperature 125°C SPST (1 Form A), SPDT (1 Form C) Quick connect terminals Available with shrouded weatherproof cover Resistor or diode parallel to coil available
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AZ986
280-ISO
6/3/03W
1N4007 DIODE
diode 1N4007 anode terminal
1N4004 diode
transistor da 307
1N4004
1N4007
AZ986
AZ986-1C-12DC2R1
24 volt 10 amp relay
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Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5317 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.
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NX5317
NX5317EH)
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Untitled
Abstract: No abstract text available
Text: TVS Diodes Transient Voltage Suppressor Diodes ESD103-B1-02 Series Bi-directional Femto Farad Capacitance TVS Diode ESD103-B1-02ELS ESD103-B1-02EL Data Sheet Revision 1.2, 2013-07-22 Final Power Management & Multimarket Edition 2013-07-22 Published by Infineon Technologies AG
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ESD103-B1-02
ESD103-B1-02ELS
ESD103-B1-02EL
TSLP-2-19,
-20-MK
TSLP-2-20
AN210:
FIN-24101
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PX10160E
Abstract: No abstract text available
Text: LASER DIODE NX5317 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5317 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode. These devices are designed for application up to 1.25 Gb/s.
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NX5317
NX5317EH)
PL10609EJ01V0DS
PX10160E
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type 1.5 Watt Plastic Surface Mount Zener Voltage Regulators 1SMA5913B Series DO-214AC SMA • Features Unit: mm ４．６０２ 4.597 3.988 ● Standard Zener Breakdown Voltage Range- 3.3 V to 68 V 3.93 3.73 1.575 1.397 ● ESD Rating of Class 3 (＞16 kV) per Human Body Model
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1SMA5913B
DO-214AC
Symb45
1SMA5941B
1SMA5942B
1SMA5943B
1SMA5944B
1SMA5945B
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Untitled
Abstract: No abstract text available
Text: P A N E L IN D IC A T O R LEDs - T e c h n ic a l Info. SERIES MAX. POWER DISSIPATION MAX. REVERSE VOLTAGE PANEL CUTOUT MIN. MOUNTING CENTRES MAX. PANEL THICKNESS 307 425 352 500 315 500 3 319 500 3 BODY LENS PANEL WASHER RETAINING CLIP 3 4.8 10.0 3 6.35
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PHP120
Abstract: PHP24 PHP250 PHP440 PHP500 PIP500 Scans-006293 MIL-STD-1399
Text: I / Microisemi Corp. SANTA ANA. CA / ' The diode experts SCOTTSDALE, A 2 F a r m o re in fo rm a tio n call: ( 602 941-6300 PH P8.4 thru P H P 50 0 and P IP 8.4 thru P IP 5 0 0 FEA TU RES • 7.500 AND 15.000 W ATTS PEAK PU LSE POWER DISSIPATION • AVAILABLE IN RANGES FROM B.4 TO 500 VOLTS
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PHP500
PIP500
10/iS
1000//s
PHP120
PHP24
PHP250
PHP440
PIP500
Scans-006293
MIL-STD-1399
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LM 317 I
Abstract: LD003 LB-502DN SML-010
Text: -4 ~ % — h' n n £i / Light Emitting Diodes SÈ: & —m M / Part Number List nn LA-101 AK Series. 218 LM-035 S eries. 298 LA-101DN Series . 220
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LM-035
LM-0352
LM-0354
LM-0355
LM-0701
LM-1256
LM-2035
LM-2064
SLR-320
SLR-322
LM 317 I
LD003
LB-502DN
SML-010
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Untitled
Abstract: No abstract text available
Text: ALPHA IN»/ SEMICONDUCTOR 4AE D • QS6S443 00Q1215 b7S W A L P High Voltage PIN Switching Diodes Features ■ ■ ■ ■ ■ ■ ■ Hard Glass Passivated Hermetic 500 to 1000 Volts Breakdown 0.1 to 2.5 pF Capacitance Low Series Resistance to .25 Ohms
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QS6S443
00Q1215
CSG7203
CSG7204
CSG7203
CSG7204
100MHz.
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Untitled
Abstract: No abstract text available
Text: N E C NEC ELECTRONICS INC 72 DE 72C 0 9 1 6 5 F b457525 SG205D/T GREEN GaP LEDs NEC Electronics Inc. NEPOC SERIES Absolute Maxim um R a tin gs Description Ta = +25°C The SG 2 0 5 D and SG 20 5 T are G a P Gallium Phos phide light emitting diodes which are mounted on lead
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b457525
SG205D/T
100mW
SG205D/luminous
SG205T.
SG205D/T
hM27525
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nec 575
Abstract: nec 16f NEC 555 BB 555 SG205D SG205T
Text: N E C NEC E L E CT RONI CS I NC 72 DE 72C 09165 i t,4S7SaS Q O t m b S T I SG205D/T GREEN GaP LEDs NEC Electronics Inc. NEPOC SERIES D escription A b so lu te M axim um R a tin gs The SG205D and SG205T are GaP Gallium Phos phide light emitting diodes which are mounted on lead
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b427S25
SG205D/T
SG205D
SG205T
SG205D/luminous
SG205T.
SG205D/T
hM57SES
nec 575
nec 16f
NEC 555
BB 555
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Rectifier diodes PBYR1045 series schottky GENERAL DESCRIPTION Low leakage, platinum barrier schottky rectifier diodes in a plastic envelope featuring low forward
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PBYR1045
O220AC
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H0A1882
Abstract: A1882
Text: H0A1882 Transmissive Sensor DESCRIPTION The HOA1882 series consists of an infrared emitting diode facing an NPN silicon phototransistor HOA1882-011, -012 or photodarlington (HOA1882-013) encased in a black IR transmissive thermoplastic housing. Detector switching takes place
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H0A1882
HOA1882
HOA1882-011,
HOA1882-013)
SEP8506/8706,
SDP8406,
SDP8106.
H0A1882
A1882
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MA4E2502L
Abstract: No abstract text available
Text: V f lf c w H SurMount Chip Schottky Diodes SurMount Chip Surface Mount Monolithic Low Barrier Schottky Diodes M A 4 E 2 5 0 0 Series Features • Singles, Pairs, Ring and Crossover Quads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization
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MIL-S-883
MA4E2500L
MA4E2502L
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Untitled
Abstract: No abstract text available
Text: FQ AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QEE122/123 PACKAGE DIMENSIONS DESCRIPTION The QEE12X is an 880 nm AIGaAs LED encapsulated in a wide angle, dark green, plastic sidelooker shell package. a FEATURES Tight production EBdistribution. Steel lead frames for improved reliability in solder
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QEE122/123
QEE12X
QSE11X
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