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    314 TRANSISTOR Search Results

    314 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    314 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR K 314

    Abstract: foto transistor Q62702-P1668 Q62702-P1675
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 314 SFH 314 FA SFH 314 SFH 314 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm SFH 314 und bei 880 nm (SFH 314 FA) • Hohe Linearität


    Original     		PDF Q62702-P1668 Q62702-P3600 Q62702-P16any TRANSISTOR K 314 foto transistor Q62702-P1668 Q62702-P1675

    Untitled

    Abstract: No abstract text available
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 314 SFH 314 FA SFH 314 SFH 314 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm SFH 314 und bei 880 nm (SFH 314 FA) • Hohe Linearität • 5 mm-Plastikbauform


    Original     		PDF GEXY6630

    TRANSISTOR K 314

    Abstract: SFH 314 SFH314FA
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 314 SFH 314 FA SFH 314 SFH 314 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm (SFH 314) und bei 880 nm (SFH 314 FA)


    Original     		PDF Q62702P1668 TRANSISTOR K 314 SFH 314 SFH314FA

    TRANSISTOR K 314

    Abstract: No abstract text available
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead Pb Free Product - RoHS Compliant SFH 314 SFH 314 FA SFH 314 SFH 314 FA Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm (SFH 314) und bei 880 nm (SFH 314 FA)


    Original     		PDF Q62702P1668 TRANSISTOR K 314

    Untitled

    Abstract: No abstract text available
    Text: 2007-04-03 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.0 SFH 314, SFH 314 FA SFH 314 SFH 314 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 460 nm.1080 nm SFH 314 , 740 nm. 1080 nm (SFH 314 FA) • Package: 5mm Radial (T 1 ¾), Epoxy


    Original     		PDF D-93055

    Untitled

    Abstract: No abstract text available
    Text: 2014-01-14 Silicon NPN Phototransistor NPN-Silizium-Fototransistor Version 1.1 SFH 314, SFH 314 FA SFH 314 SFH 314 FA Features: Besondere Merkmale: • Spectral range of sensitivity: 460 nm.1080 nm SFH 314 , 740 nm. 1080 nm (SFH 314 FA) • Package: 5mm Radial (T 1 ¾), Epoxy


    Original     		PDF D-93055

    SFH 314

    Abstract: Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757 Q62702-P1758 TRANSISTOR K 314
    Text: NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 314 SFH 314 FA SFH 314 SFH 314 FA Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 460 nm bis 1080 nm SFH 314 und bei 880 nm (SFH 314 FA) • Hohe Linearität • 5 mm-Plastikbauform


    Original     		PDF OHF02342 GEX06630 SFH 314 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757 Q62702-P1758 TRANSISTOR K 314

    TRANSISTOR K 314

    Abstract: GEX06630 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757 Q62702-P1758
    Text: SFH 314 SFH 314 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 314 SFH 314 FA feo06652 .Neu: Area not flat 1.8 1.2 5.9 5.5 4.0 3.4 0.6 0.4 Chip position GEX06630 feof6652 29.5 27.5 Cathode Diode Collector (Transistor) 6.9 6.1 5.7 5.5


    Original     		PDF feo06652 GEX06630 feof6652 OHF02340 OHF02338 OHF02342 TRANSISTOR K 314 GEX06630 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757 Q62702-P1758

    TRANSISTOR K 314

    Abstract: foto transistor SFH 314 phototransistor 500-600 nm GEX06630 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757
    Text: SFH 314 SFH 314 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor Area not flat 6.9 6.1 5.7 5.5 5.9 5.5 1.8 1.2 29.5 27.5 Cathode Diode Collector (Transistor) ø5.1 ø4.8 0.8 0.4 2.54 mm spacing 0.6 0.4 SFH 314 SFH 314 FA feo06652 .Neu: 4.0


    Original     		PDF feo06652 GEX06630 feof6652 OHF02340 OHF02338 OHF02342 TRANSISTOR K 314 foto transistor SFH 314 phototransistor 500-600 nm GEX06630 Q62702-P1668 Q62702-P1675 Q62702-P1755 Q62702-P1756 Q62702-P1757

    2SD1897

    Abstract: 2SD1757K
    Text: Transistors 2SD1897 2SD1757K 96-768-D91 (94S-314-D95) 317


    Original     		PDF 2SD1897 2SD1757K 96-768-D91) 94S-314-D95) 2SD1897 2SD1757K

    2SD2576

    Abstract: 2SD2394 D310 2SD2167 D348 transistor D348
    Text: Transistors 2SD2167 2SD2394 / 2SD2576 92S-358–D310 (94L-1098-D348) 314


    Original     		PDF 2SD2167 2SD2394 2SD2576 92S-358 94L-1098-D348) 2SD2576 D310 2SD2167 D348 transistor D348

    MARK 8E diode

    Abstract: SOT89 MARKING 8E KIA78L09F 8E sot-89 mark 8E 8e sot89 sot89 8e sot-89 SOT-89 marking 8e marking 4 SOT89
    Text: SEMICONDUCTOR KIA78L09F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 E 1 314 2. Marking 2 Item Marking Description Device Mark 8E KIA78L09F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.


    Original     		PDF KIA78L09F OT-89 MARK 8E diode SOT89 MARKING 8E KIA78L09F 8E sot-89 mark 8E 8e sot89 sot89 8e sot-89 SOT-89 marking 8e marking 4 SOT89

    KIA78L*F

    Abstract: 8J marking marking 8j sot-89 marking 8J KIA78L18F sot-89 MARKING SPECIFICATION SOT-89 marking 314
    Text: SEMICONDUCTOR KIA78L18F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 J 1 314 2. Marking 2 Item Marking Description Device Mark 8J KIA78L18F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.


    Original     		PDF KIA78L18F OT-89 KIA78L*F 8J marking marking 8j sot-89 marking 8J KIA78L18F sot-89 MARKING SPECIFICATION SOT-89 marking 314

    SOT89 transistor marking

    Abstract: KIA78L*F KIA78L06F sot-89 MARKING SPECIFICATION SOT-89 314 sot-89 marking 314
    Text: SEMICONDUCTOR KIA78L06F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 B 1 314 2. Marking 2 Item Marking Description Device Mark 8B KIA78L06F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.


    Original     		PDF KIA78L06F OT-89 SOT89 transistor marking KIA78L*F KIA78L06F sot-89 MARKING SPECIFICATION SOT-89 314 sot-89 marking 314

    MARK 8F

    Abstract: KIA78L*F KIA78L10F 8f diode sot-89 marking sot-89 marking 314 SOT89 transistor marking kia78l
    Text: SEMICONDUCTOR KIA78L10F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 F 1 314 2. Marking 2 Item Marking Description Device Mark 8F KIA78L10F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.


    Original     		PDF KIA78L10F OT-89 MARK 8F KIA78L*F KIA78L10F 8f diode sot-89 marking sot-89 marking 314 SOT89 transistor marking kia78l

    KIA78L*F

    Abstract: marking 314 SOT-89 8i KIA78L15F sot-89 MARKING SPECIFICATION SOT-89
    Text: SEMICONDUCTOR KIA78L15F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking No. 8 I 1 314 2. Marking 2 Item Marking Description Device Mark 8I KIA78L15F * Grade - - Lot No. 314 3 Year 0~9 : 2000~2009 14 Week 14 : 14th Week Note * Grade : Transistor only.


    Original     		PDF KIA78L15F OT-89 KIA78L*F marking 314 SOT-89 8i KIA78L15F sot-89 MARKING SPECIFICATION SOT-89

    a 314j

    Abstract: ST7MDT20M-EPB ADC software program st72521 cpu 314 AN1131 ST72 ST7MDT20-DVP2
    Text: AN1131 APPLICATION NOTE MIGRATING APPLICATIONS FROM ST72511/311/314/124 TO ST72521/321/324 by Microcontroller Division Applications 1 INTRODUCTION This application note provides information on migrating ST72511/311R, 314N, 314/124J applications to the ST72521/321R, 321/324J family. The ST72521/321R, 321/324J family is designed and manufactured in a more recent technology.


    Original     		PDF AN1131 ST72511/311/314/124 ST72521/321/324 ST72511/311R, 314/124J ST72521/321R, 321/324J ST72314 a 314j ST7MDT20M-EPB ADC software program st72521 cpu 314 AN1131 ST72 ST7MDT20-DVP2

    cpu 314

    Abstract: A 314J ADC software program st72521 ic 311 pdf datasheets AN1131 ST72 324J 124j
    Text: AN1131 APPLICATION NOTE MIGRATING APPLICATIONS FROM ST72511/311/314/124 TO ST72521/321/324 by Microcontroller Division Applications 1 INTRODUCTION This application note provides information on migrating ST72511/311R, 314N, 314/124J applications to the ST72521/321R, 321/324J family. The ST72521/321R, 321/324J family is designed and manufactured in a more recent technology.


    Original     		PDF AN1131 ST72511/311/314/124 ST72521/321/324 ST72511/311R, 314/124J ST72521/321R, 321/324J ST72314 cpu 314 A 314J ADC software program st72521 ic 311 pdf datasheets AN1131 ST72 324J 124j

    ctx128

    Abstract: IC 8021-2 CTX128 diode SE271 CSA 20.00MX ZTT-4.00MG ZTB455E CSX750PCC ECS-327SMO ECS-10-13-1H
    Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 14-176 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 177-313 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 314-333


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 314 SFH 314 FA Area not flat 5.9 5.5 JX6 0.4 GEX06630 Collector Transistor Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Wesentliche Merkmale


    OCR Scan     		PDF GEX06630 SFH314 sensitivitySFH314FA,

    NE68018

    Abstract: 814T
    Text: Medium Power Bipolar Transistors Pide MAQ fr I TEST Hfe Fax on dBM TYP (dBM) NE46100 2.0 12.5 100 19 27 10 100 9.8 5.5 100 250 Chip 00 D 314 NE46134 1.0 12.5 100 20.5 27.5 10 50 9 5.5 100 250 SOT-89 34 D 314 NE85634 1.0 10 40 13 22 10 40 11 6.5 120 100 SOT-89


    OCR Scan     		PDF NE46100 NE46134 NE85634 OT-89 NE94430 E944321 NE94433 UPA801T UPA806T NE68018 814T

    BF314

    Abstract: tfk 248 TFK 29 16go TFK 4 314 TFK 450 ic251 TFK 175 TRANSISTOR K 314 BF 251
    Text: BF 314 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Feafures: • Kleine R ückwirkungskapazität


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SD1314 2S D1 314 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON HIGH PO W ER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 20.5MAX. • • ^3.3 ±0.2 High DC Current Gain : —100 (Min.) Low Saturation Voltage : Vqe (sat)~^V (Max.)


    OCR Scan     		PDF 2SD1314 VCC-300V

    TRANSISTOR K 314

    Abstract: telefunken ta 350 bf314
    Text: < TELEFUNKEN ELECTRONIC Ô1C D • ñRSDDTb D Q D S n b 2 ■ ALÛÛ T ; - 3 1 - / 7 mitPdjJIMtiM electronic B F 314 ; Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Application« Video Input stages in common base configuration Features:


    OCR Scan     		PDF