N25Q256
Abstract: No abstract text available
Text: 512Mb, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25QAx3G12x0x, N25QAx3GF8x0x, N25QAx3GSFx0x Features • • • • • • • • • • • • • • • • • • Write protection
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512Mb,
N25QAx3G12x0x,
N25QAx3GF8x0x,
N25QAx3GSFx0x
256Mb
09005aef84752721
N25Q256
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SC11024
Abstract: 11024C 2764 z SCI1006
Text: V SIERRA SEMICONDUCTOR SC11024 2400 Bit Per Second Modem Analog Peripheral □ Conforms to CCITT V.22 bis, V.22, V.21, and Bell 212A and 103 standards □ Single 5 V supply with 10 mW power dow n mode □ A nalog, digital, and rem ote digital loopback □ Integrated DTM F/G uard Tone
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SC11024
28-PIN
11024C
plete2400
SC11024
MA8-MA10,
MA12-MA13
2764 z
SCI1006
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PDF
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C8050
Abstract: AB32 AB34 TMS320C80
Text: TMS320C80 Digital Signal Processor Data Sheet 1997 Digital Signal Processing Solutions Printed in U.S.A., October 1997 SPRS023B Book Type Data Sheet TMS320C80 DSP 1997 TMS320C80 DIGITAL SIGNAL PROCESSOR SPRS023B – JULY 1994 – REVISED OCTOBER 1997 D D D
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TMS320C80
SPRS023B
TMS320C80
32-Bit
IEEE-754
64-Bit
C8050
AB32
AB34
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PDF
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Untitled
Abstract: No abstract text available
Text: 5ME D TOSHIBA UC/UP T O S H IB A • T 0 c1724tî a D S ^ Ì UNDER DEVELOPMENT h2b « T 0 S 3 TMP90CK42 CMOS 8-BIT MICROCONTROLLERS "T -4 M 9 -< 2 > g TMP90CK42F 1. OVERVIEW AND FEATURES The TM P90CK42F is a n advanced function, highly integrated 8-bit microcontroller
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1724t
TMP90CK42
TMP90CK42F
P90CK42F
TMP91C642N
TMP90CK42F
QFP100-P-1420A)
MCU90-969
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PDF
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K1B5616BBM
Abstract: K1B5616BA D254 D255 K1B5616BAM K1B5616BAM-I UtRAM Density
Text: Preliminary UtRAM K1B5616BA B M 256Mb (16M x 16 bit) UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B5616BA
256Mb
K1B5616BBM
D254
D255
K1B5616BAM
K1B5616BAM-I
UtRAM Density
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PDF
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T112-16
Abstract: Halbleiterbauelemente DDR Datenblattsammlung Tesla katalog tesla schaltkreise mikroelektronik datenblattsammlung VEB mikroelektronik mikroelektronik RFT mikroelektronik DDR rft katalog
Text: Di vorliegenden Datenblätter dienen nur sur- Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente ©ingestuften Sortimente© Aus den Datenblättern können keine Liefer- oder ProduktVer bindlichkeiten abgeleitet werden*
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DDR-1035
T112-16
Halbleiterbauelemente DDR
Datenblattsammlung
Tesla katalog
tesla schaltkreise
mikroelektronik datenblattsammlung
VEB mikroelektronik
mikroelektronik RFT
mikroelektronik DDR
rft katalog
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PDF
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B083D
Abstract: u82720 A110D TDA4100 ub8830d V40511D taa981 A109D sy 710 IC 7447
Text: > i ! U O i j q > i a | a S [ ^ ] 0 [ y y H erstellerbetriebe Bei den einzelnen Erzeugnissen werden die Herstellerbetriebe durch die nachfolgend angegebenen Symbole gekennzeichnet: VEB M ik ro e le k tro n ik „K a rl M a r x “ Erfurt L e itb e tr ie b im VEB K o m b in a t M ik ro e le k tr o n ik
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N25Q128A13ESE40
Abstract: n25q128a13 N25Q128A13E N25Q128A13E1240 SO8W Package N25Q128A13ESF40 n25q128a N25Q128
Text: 128Mb, 3V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A13E1241x, N25Q128A13E1240x, N25Q128A13ESE40x, N25Q128A13ESF40x, N25Q128A13EF840x, N25Q128A13EF740x Features • • • • • •
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128Mb,
N25Q128A13E1241x,
N25Q128A13E1240x,
N25Q128A13ESE40x,
N25Q128A13ESF40x,
N25Q128A13EF840x,
N25Q128A13EF740x
09005aef845665fe
N25Q128A13ESE40
n25q128a13
N25Q128A13E
N25Q128A13E1240
SO8W Package
N25Q128A13ESF40
n25q128a
N25Q128
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PDF
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cr1 5 p26z
Abstract: No abstract text available
Text: 128Mb: 8 Meg x 16 Async/Page/Burst CellularRAM 1.5 Features Async/Page/Burst CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: – 1.7V–1.95V VCC – 1.7V–3.3V1 VCCQ
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128Mb:
MT45W8MW16BGX
09005aef80ec6f79/Source:
09005aef80ec6f65
cr1 5 p26z
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PDF
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N25Q128A13ESE40
Abstract: DQ03-0 XIP2 N25Q128A13ESE n25q128a13 N25Q128A N25Q128A13EF7
Text: 128Mb, 3V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q128A13E1241x, N25Q128A13E1240x, N25Q128A13ESE40x, N25Q128A13ESF40x, N25Q128A13EF840x, N25Q128A13EF740x Features • • • • • •
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128Mb,
N25Q128A13E1241x,
N25Q128A13E1240x,
N25Q128A13ESE40x,
N25Q128A13ESF40x,
N25Q128A13EF840x,
N25Q128A13EF740x
09005aef845665fe
N25Q128A13ESE40
DQ03-0
XIP2
N25Q128A13ESE
n25q128a13
N25Q128A
N25Q128A13EF7
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PDF
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n25q64
Abstract: N25Q064A11ESE40 N25Q064 SOP package tray SOP2-16
Text: 64Mb, 1.8V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase N25Q064A11E124xx, N25Q064A11ESE40x, N25Q064A11ESF40x, N25Q064A11EF840x, N25Q064A11EF640x Features • • • • • • • • •
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Original
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N25Q064A11E124xx,
N25Q064A11ESE40x,
N25Q064A11ESF40x,
N25Q064A11EF840x,
N25Q064A11EF640x
09005aef845665ea
n25q64
N25Q064A11ESE40
N25Q064
SOP package tray SOP2-16
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PDF
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5016 SBO
Abstract: uPD75P316BKK-T uPD75308 uPD75316B uPD75P316B uPD75P316BGC-3B9 uPD75P316BGK-BE9
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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uPD75P336GK-BE9
Abstract: P30-P33 uPD75336 uPD75P336 uPD75P336GC-3B9 75336GC
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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PDF
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8082d
Abstract: UP 5035 LCD METER 8082D ic 75306B 75308B uPD75304B uPD75306B uPD75308 uPD75308B uPD75P308
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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BCR100
Abstract: No abstract text available
Text: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:
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128Mb/64Mb
09005aef81d721fb
pdf/09005aef81d72262
BCR100
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PDF
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6e5c
Abstract: cha 0438 044c 809D 8085 PWM 6E-15 pwm Sine wave generation microcontroller HC12 8085 ASM to add two 8-bit number counter cd 4026 8097 microcontroller
Text: Order this document by AN1771/D Motorola Semiconductor Application Note AN1771 Precision Sine-Wave Tone Synthesis Using 8-Bit MCUs By Joe Haas TSG Body Electronics and Occupant Safety Division Austin, Texas Introduction The pervasive nature of the modern microcontroller MCU has resulted
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AN1771/D
AN1771
6e5c
cha 0438
044c
809D
8085 PWM
6E-15
pwm Sine wave generation microcontroller HC12
8085 ASM to add two 8-bit number
counter cd 4026
8097 microcontroller
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary UtRAM K1B1616B2B 16Mb 1M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B1616B2B
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PDF
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Untitled
Abstract: No abstract text available
Text: /T 7 SCS-THOMSON * 7 M , « IM ilL Ë O T IM O S T V 0 1 1 7 A PAL/NTSC DIGITAL ENCODER • NTSC-M, PAL-M, PAL-B, D, G, H, I, PAL-N EASILY PROGRAMMABLE VIDEO OUTPUTS ■ U/V AND Q/l MATRIXING FOR RESPEC TIVELY PAL AND NTSC ENCODING ■ DIGITAL FRAME SYNC INPUT/OUTPUT
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CCIR601/SQUARE
625LINe
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PDF
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Untitled
Abstract: No abstract text available
Text: K1C3216B8E UtRAM2 32Mb 2M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1C3216B8E
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PDF
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Untitled
Abstract: No abstract text available
Text: K1C6416B2D UtRAM2 64Mb 4M x 16 bit UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1C6416B2D
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PDF
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15Z1
Abstract: motor jun tuo 2T825 LM 3177 switching reg stepping motor EM 58b d70433gd d70433 uPD70433 PD70433 TFK 601
Text: DATA SHEET N E MOS INTEGRATED CIRCUIT C ¿ ¿ P D 7 4 3 3 V55PI 16-BIT MICROPROCESSOR DESCRIPTION The ¿iPD70433 V55P0 is a m icroprocessor in which a 16-bit CPU, RAM, serial interface, parallel interface, A/D converter, tim ers; DMA controller, interrupt controller, etc., are integrated
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OCR Scan
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V55PITM
16-BIT
uPD70433
V55P0
V55PI
/iPD70320
V25TM
V35TM)
15Z1
motor jun tuo
2T825
LM 3177 switching reg
stepping motor EM 58b
d70433gd
d70433
PD70433
TFK 601
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PDF
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Chips and Technologies F840
Abstract: b1115 d6160
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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0103D2
603090C0
H8/300H
Chips and Technologies F840
b1115
d6160
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PDF
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TN-12-24
Abstract: SO8w
Text: 32Mb, 3V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase N25Q032A Features • • • • • • • • • • • • Write protection – Software write protection applicable to every 64KB sector via volatile lock bit
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Original
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N25Q032A
09005aef84566622
TN-12-24
SO8w
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PDF
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N25Q064
Abstract: n25q64 N25Q064a n25q
Text: 64Mb, 1.8V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase N25Q064A Features • • • • • • • • • • • • • Write protection – Software write protection applicable to every
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N25Q064A
09005aef845665ea
N25Q064
n25q64
n25q
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PDF
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