MTE-H33 Series
Abstract: No abstract text available
Text: Ultraviolet Emitter Product No: M T E - H33 Series Peak Emission Wavelength: 310nm, 325nm, 340nm The MTE-H33 series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy in a TO-5 hermetically sealed package with a special UV glass lens for optimum life time and
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310nm,
325nm,
340nm
MTE-H33
MTE-H33 Series
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ISL21080DIH309Z-TK
Abstract: ISL21080-09 ISL21080-10 ISL21080-12 ISL21080-15 ISL21080-20 ISL21080-30 ISL21080-33 ISL21080-41 ISL21080DIH309
Text: ISL21080 Features The ISL21080 analog voltage references feature low supply voltage operation at ultra-low 310nA typ, 1.5µA max operating current. Additionally, the ISL21080 family features guaranteed initial accuracy as low as ±0.2% and 50ppm/°C temperature coefficient.
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ISL21080
ISL21080
310nA
50ppm/
OT-23
AMSEY14
5m-1994.
ISL21080DIH309Z-TK
ISL21080-09
ISL21080-10
ISL21080-12
ISL21080-15
ISL21080-20
ISL21080-30
ISL21080-33
ISL21080-41
ISL21080DIH309
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Untitled
Abstract: No abstract text available
Text: SMD deep UV LEDs new deep UV LEDs at 275 nm and 310 nm in diverse ceramic SMD packages link to web site datasheets: 275nm 310nm associated links LEDs optics price list find prices for the new SMD deep UV LEDs on price list page 55 ROITHNER LASERTECHNIK GmbH
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275nm
310nm
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Untitled
Abstract: No abstract text available
Text: APT47F60J 600V, 49A, 0.09Ω Max, trr ≤ 310ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT47F60J
310ns
E145592
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JAPAN transistor
Abstract: amazing prius ALL DATASHEET CELERON intel sony 310N
Text: 2000 3105ST50NJT Amazing Twins Design Workshop Limited 1999 1 2 3 s © 3105ST50NJT Intel Celeron 3105ST50N Intel®Celeron t 3105ST50NJ Intel®Celeron ©1999-2000 Sony Communication Network Corporation All rights reserved. FLORA Prius 310N ® Prius 310N
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3105ST50NJT
3105ST50N
3105ST50NJ
PR-028
JAPAN transistor
amazing
prius
ALL DATASHEET
CELERON
intel
sony
310N
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MTE-F13 Series
Abstract: No abstract text available
Text: Ultraviolet Emitter Product No: M T E - F13 Series Peak Emission Wavelength: 310nm, 325nm, 340nm The MTE-F13 series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy in a TO-39 hermetically sealed package with a special UV glass lens for optimum life time and device
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310nm,
325nm,
340nm
MTE-F13
MTE-F13 Series
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47NF
Abstract: 600R CTR21 Z1 Transistor AG1170 Transistor z1 transistor z4 n 220R 270R 150nf
Text: Impedance Programming the Ag1170P ZB VIN Z2 ZT1 Z3 ZT2 Z5 Z1 Z4 Network Balance Z6 Terminal Impedance NOTE: ZB, VIN, ZT1 and ZT2 are pin connections for the Ag1170P interface. See Ag1170 datasheet for more details. Line Impedance 600R 600R+2.16uF 370R+620R//310nF
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Ag1170P
Ag1170P
Ag1170
620R//310nF
820R//115nF
830R//72nF
910//150nF
560R//0
750R//150nF
510R//47nF
47NF
600R
CTR21
Z1 Transistor
Transistor z1
transistor z4 n
220R
270R
150nf
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Untitled
Abstract: No abstract text available
Text: ISL21080 Data Sheet July 28, 2009 FN6934.0 300nA NanoPower Voltage References Features The ISL21080 analog voltage references feature low supply voltage operation at ultra-low 310nA typ, 1.5µA max operating current. Additionally, the ISL21080 family features
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ISL21080
FN6934
300nA
ISL21080
310nA
50ppm/
OT-23
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Untitled
Abstract: No abstract text available
Text: APT47F60J 600V, 47A, 0.10Ω N-Channel FREDFET Max, trr ≤ 310ns S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT47F60J
310ns
E1455992)
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zvs flyback driver
Abstract: No abstract text available
Text: APT66F60B2 APT66F60L 600V, 66A, 0.10Ω Max, trr ≤ 310ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT66F60B2
APT66F60L
310ns
O-264
APT66F60B2
O-247
zvs flyback driver
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MTE-H32 Series
Abstract: No abstract text available
Text: Ultraviolet Emitter Product No: M T E - H32 Series Peak Emission Wavelength: 310nm, 325nm, 340nm The MTE-H32 series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy in a TO-46 hermetically sealed package with a special UV glass lens for optimum life time and
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310nm,
325nm,
340nm
MTE-H32
MTE-H32 Series
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MTE-H21 Series
Abstract: No abstract text available
Text: Ultraviolet Emitter Product No: M T E - H21 Series Peak Emission Wavelength: 310nm, 325nm, 340nm The MTE-H21 series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy in a TO-46 hermetically sealed package with a special UV glass lens for optimum life time and
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310nm,
325nm,
340nm
MTE-H21
MTE-H21 Series
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APT66F60B2
Abstract: APT66F60L MIC4452
Text: APT66F60B2 APT66F60L 600V, 70A, 0.09Ω Max, trr ≤ 310ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT66F60B2
APT66F60L
310ns
O-264
O-247
APT66F60B2
APT66F60L
MIC4452
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APT47F60J
Abstract: MIC4452
Text: APT47F60J 600V, 49A, 0.09Ω Max, trr ≤ 310ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT47F60J
310ns
E145592
ISOTO04)
APT47F60J
MIC4452
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Untitled
Abstract: No abstract text available
Text: Ultraviolet Emitter Product No: M T E - S MD Series Peak Emission Wavelength: 310nm, 325nm, 340nm The MTE-SMD series UV emitter is a specifically designed for applications requiring high radiant power output and accuracy in a SMD package with a special UV glass lens for optimum life time and device
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310nm,
325nm,
340nm
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Untitled
Abstract: No abstract text available
Text: ISL21080 Features The ISL21080 analog voltage references feature low supply voltage operation at ultra-low 310nA typ, 1.5µA max operating current. Additionally, the ISL21080 family features guaranteed initial accuracy as low as ±0.2% and 50ppm/°C temperature coefficient.
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ISL21080
ISL21080
310nA
50ppm/Â
OT-23
AMSEY14
5m-1994.
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Untitled
Abstract: No abstract text available
Text: Ultraviolet Emitter Product No: M T E 3 1 0SMD4-UV Peak Emission Wavelength: 310nm The MTE310SMD-UV UV emitter is a specifically designed for applications requiring high radiant power output and accuracy in a SMD package with a special UV glass lens for optimum life time and device
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310nm
MTE310SMD-UV
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Untitled
Abstract: No abstract text available
Text: APT47F60J 600V, 49A, 0.09Ω Max, trr ≤ 310ns N-Channel FREDFET S S Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure
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APT47F60J
310ns
E145592
APT47Pulse
OT-227
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Untitled
Abstract: No abstract text available
Text: bEE D • m 27S2S DD37S15 bTT HNECE N E C ELECTRONICS INC J _ LASER DIODE N D L 5738P , N D L 5 7 3 8 P 1 1 310nm InGaAsP DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLEMODE FIBER DESCRIPTION NDL5738P and NDL5738P1 are 1 310 nm laser diode coaxial module w ith singlemode fiber. It incorporates InGaAs m onitor
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27S2S
DD37S15
5738P
310nm
NDL5738P
NDL5738P1
NDL5738P,
NDL5738P1
bH57555
b427525
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Untitled
Abstract: No abstract text available
Text: 66-SL-OL m m ià •Z T S 310NV =F X X X X ' g o o ; =f x x x * 10' =F XX * 580^-0^3-018 :XM1 ¿ H I XO0 'O'd ££¿9 -1 *6 218 : N 0 S 30N VÜ 3101 S 3H ON I Nl OSl/fr NI ’A N V a iV M3N 'O A IS 1SV 3 »dV d 02S EÜ _ > 3dV SNOISNBkNIO WSV dIHiS "IVNIWaiL OS Q20
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iO-LZ88L-dSV
66-SL-OL
310NV
3SIM83H10
Q31Vd
d31S3A10d
10Via
H3H10
C0-LZ88L-dSV
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Untitled
Abstract: No abstract text available
Text: '3VP dO Ì N 3 S N 0 0 N3J.1IÜM lflOHllM a30fia0Hd3ü * 4 ? i 3 m m 39 ION N V O O N V si° 4105# o> <> SI 1VH1 N O U V W H O d N l V Odd V OddV g m d t7 M t7 E d — 0 E a 3111 i ) « NOI IV 17 • o =F T 8 ’0 T T (31VQ # u ONliVld % 1331S AO~nv 3 310N
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a30fia0Hd3ü
13Z17EOPS
N0H10313
S310NV)
30NVt
d3dd00
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V01D
Abstract: DUPONT CONNECTOR
Text: * JO 1133« SC099 Q l/B ON «M JZIT, _ 3i0vid303a 3«im oNrwa «30V3H 310NV iHOIH aoj .*.1’ UNV6IH3T. ¡KO 1 _2ïî rSTTT s w a i S À S «row « 0 0 *>0000 V IM '••0000 t SOO’aOOOVCl *0*000 *0 10 '* 0 0 - / K -0.00 t nianBTiiwr»Kr QTMimjb tiJX«
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SC099
3i0vid303a
30V3H
310NV
V01D3NN03
33WVM3101
SIM3H10
03110H
76u/30u"
27u/50u"
V01D
DUPONT CONNECTOR
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NT1310
Abstract: LA 7683 A
Text: N E C E L E C T R O N I C S hEZ I N C » • h 4 S 7 S 2 5 0 0 3 7 ^ 0 7 1 3 W N E C E DATA SH EET NEC LA SER DIODE MODULE NDL7500P ELECTRON DEVICE 1 310nm In G a A sP M Q W -D C -P B H P U L SE D L A S E R D IO D E 14 PIN D IP M O D U L E W IT H S IN G L E M O D E FIBER
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NDL7500P
310nm
L7500P
NDLS060
NDL5061
NDL5762P
NDL5766P
NDL7500P
NDL5070
NDL5071
NT1310
LA 7683 A
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ndl5
Abstract: No abstract text available
Text: N E C ELECTRONI CS INC b2E J> • bM2 7 S2 S GDa?^? 33G « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5765P, NDL5765P1 e le c tro n dev,CE 1 310nm InGaAsP D C-PB H PULSED LA S E R DIODE 4 PIN C O A X IA L M O D ULE WITH SIN GLEM O DE FIBER D E S C R IP T IO N
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NDL5765P,
NDL5765P1
310nm
L5765P1
NDL5060
NDL5061
NDL5762P
NDL5766P
NDLS070
NDL5071
ndl5
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