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    310A0 Search Results

    310A0 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    57202-G53-10A03LF Amphenol Communications Solutions Unshrouded Vertical Header, Surface Mount, Double Row, 20 Position ,2.00mm (0.079in) Pitch Visit Amphenol Communications Solutions
    57202-S53-10A01LF Amphenol Communications Solutions Unshrouded Vertical Header, Surface Mount, Double Row, 20 Position ,2.00mm (0.079in) Pitch Visit Amphenol Communications Solutions
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    310A0 Price and Stock

    ITT Interconnect Solutions M83513-10-A01CP

    CONN MICRO-D PLUG 9POS R/A SLDR
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    DigiKey M83513-10-A01CP Bag 43 1
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    ITT Interconnect Solutions M83513-10-A02NP

    CABLE ASSY D TO MIC D 9POS
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    DigiKey M83513-10-A02NP Bulk 40 1
    • 1 $77.14
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    Cinch Connectivity Solutions M83513-10-A01CP

    9 POS PLUG RED. 90 PCB CD PLTD
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    DigiKey M83513-10-A01CP Bag 38 1
    • 1 $135.34
    • 10 $105.559
    • 100 $84.0657
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    Cinch Connectivity Solutions M83513-10-A01NP

    CONN MICRO-D PLUG 9POS R/A SLDR
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    DigiKey M83513-10-A01NP Bag 12 1
    • 1 $131.26
    • 10 $102.345
    • 100 $81.4803
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    ITT Interconnect Solutions M83513-10-A02NN

    CABLE ASSY D TO MIC D 9POS
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    DigiKey M83513-10-A02NN Bulk 10 1
    • 1 $146.58
    • 10 $115.575
    • 100 $115.575
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    310A0 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PEAK tray drawing

    Abstract: BG0808
    Text: REC YC LE WITH SEM ICYCLE cT I 310A0iraS HUM 313A03d I PART NUMBER LO rO CN cn r-» CN "C H A M FER INDICATES P A C K A G E PIN#1 O R I E N T A T I O N ^t" LO CO 1. M A T E R I A L - P P 6 . 2. A L L D I M E N S I O N S A R E IN MILLIM E T E R S , 3. T O L E R A N C E S - X. X = + 0 . 2 5


    OCR Scan     		PDF 310ADm3S RG0808 CSA05217 BG0808 PEAK tray drawing

    PEAK tray drawing

    Abstract: BG3131
    Text: R E C Y C L E W ITH S E M IC Y C L E I 310A0IH3S HUM 31DAD3d I 5 5 .9 9 2 . J 3 , 0 X 4 5 _ CHAMFER INDICATES P AC KAG E P IN #1 ORIENTATION R 1 .6 SEE SEE B O TTO M VIEW A D DE' M ATERIAL - PP8. ALL DIMPNSIONS ARP IN MIPPIMPTPRS. := + 0 .25 :X= + 0.13 PPCI PI PD.


    OCR Scan     		PDF 310A0IH3S 313A33a BG3131 CSA03012 BG3131 PEAK tray drawing

    CSA04

    Abstract: No abstract text available
    Text: -pi RECYCLE WITH SEMICYCLE I 313A0IN3S HIM 310A03y I PART NUMBER m ro CJD CNJ " C H A M F E R IHD ICATES P A C K A G E P I N #1 ORIEHTATIOH SEE DETAIL C NOTES : 1, M A T E R IA L - R R 8 . 2, ALL DIMENSIONS ARE IN MILLA 1ETER Í 3, TO L E R A N C E S - X „X = + 0 , 2 5


    OCR Scan     		PDF 313A03y bg1717 30NES CSA04131 CSA04

    420A0002

    Abstract: ic L 816a y 825A0001
    Text: AC-AC WALL PLUG-IN TRANSFORMERS 120 VAC, 60 Hz. AND 220VAC, 50Hi. UL <f| File No. E82180 L File No. LR38236 1 File No. 7969-3330. 7969-3331 MICROTRAIM FEATURES • UL Class II Xfmrs-UL 1310. • UL 544 Medical Capability • Thermal Overload Protection. • lOO'/r Testing


    OCR Scan     		PDF 220VAC, E82180 LR38236 94-VO. TRANSFORMERS-120VAC 420A0003 825A0007G 420A0001 310A0002 825A0001 420A0002 ic L 816a y 825A0001

    825A00

    Abstract: FL100 E8218 818A0001 825A0 830A0060-03
    Text: TAMURA WALL PLUG-IN and S C RE W TERMINAL AC*A* •RÜ •20VAC. 60Hz ana 220VAC. 50Hz. file nos.7969-3330 file nos. LR38236 file nos. E82180 7969-3331 FEATURL.: • UL Class II X fm rs- U L 1310. 100% Testing. Temp Range: 0 to +40'C. Material: Black ABS resin/UL 94-V0.


    OCR Scan     		PDF 20VAC. 220VAC. E82180 LR38236 94-V0. 120VAC. 42DA0003 825AQ007G 420A0001 310A0002 825A00 FL100 E8218 818A0001 825A0 830A0060-03

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT MP D 4 2 1 6 4 0 5 16M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The fiPD4216405 is a 4 194 304 words by 4 bits dynamic CMOS RAM with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.


    OCR Scan     		PDF 16M-BIT fiPD4216405 tPD4216405 26-pin cycles/64 /1PD4216405-50 016to D0S71SS b45755S

    I486DX2

    Abstract: 62406 i486DX2 66 MCM62486A-11
    Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA 32K x 9 Bit BurstRAM Synchronous Static RAM MCM62486A With Burst Counter and Self-Timed Write The M C M 62 4 8 6A is a 294,912 b it synchronous static random access m em ory desig n ed to provide a burstable, h ig h -p erform a n ce, secondary cache


    OCR Scan     		PDF 2406A 2486A MCM62486A i486DX2 i486D 2466A I486DX2 62406 i486DX2 66 MCM62486A-11

    STA 518A

    Abstract: No abstract text available
    Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Product Preview MCM67B518A 32K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write T h e M C M 67B 518A is a 589,824 bit synchronous fa st static random a ccess m e m ory designed to provide a burstable, h ig h -p erform a n ce, secondary cache


    OCR Scan     		PDF MCM67B518A i486TM applicationsB518A MCM678518AFN9 -------------67B MCM67B518AFNB MCM67B518AFN9 MCM67B518AZP8 MCM67B518AZP9 MCM67B518AFN10 STA 518A

    MCM67N618AFN5

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67N618A Product Preview 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Registered Outputs The MCM67N618A is a 1,179,648 bit synchronous static random access memory designed to provide a burstable, high-performance, secondary cache


    OCR Scan     		PDF MCM67N618A MCM67N618A MC68040 PC604 CM67N618AFN7 MCM67N618AFN7s MPC604 67N618A MCM67N618AFN5 MCM67N618AFN7 MCM67N618AFN5

    Untitled

    Abstract: No abstract text available
    Text: 24°' CMOS 16-Channel Precision Timer/Driver Features: • Provides 17precision-timed output pulses ■ Variable output pulse width as a function o f an external timer clock frequency ■ High source current drive output pulses- up to 15 mA using bipolar drivers


    OCR Scan     		PDF 16-Channel 17precision-timed CD22401

    HC3208

    Abstract: H3208 HB3208 HI3208
    Text: H3208 1024 x 8 CMOS EEPROM M IC RO ELEC TR O N IC S C E N T E R DESCRIPTION Hughes H 3208 is a CMOS Electrically Erasable and Programmable ROM EEPROM organized as 1024 x 8 bits. Read, w rite and erase operations are performed w ith a single 5 V power supply using TTL


    OCR Scan     		PDF H3208 H3208 HC3208 HB3208 HI3208

    4279g

    Abstract: G52E111 G74B111 ET-46 microtran t5115 IFS-0505 TTC05 TTC 103 2PC 502 m 8044
    Text: ~tamura Product Number Index MICROTRAIM, Part No. Page Part No. Page 1 0A 006 20 3FD -348 18 Part No. 3FS -2120 Page 18 630A4201 33 A K S 25-12 39 DCM 4-PC 10A 007 20 3FD -356 18 3FS -216 18 630 A 4 3 0 4 33 A K S 25-15 39 DCM 5-PC 6 1 0A 008 20 3FD -410 18


    OCR Scan     		PDF 10A011 10C011 630A4201 816A0001 816AR 818A0001 818F4124 TL1115 TP3111 1104-M 4279g G52E111 G74B111 ET-46 microtran t5115 IFS-0505 TTC05 TTC 103 2PC 502 m 8044

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MCM67B618A/D SEMICONDUCTOR TECHNICAL DATA MCM67B618A 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM67B618A is a 1,179,648 bit synchronous fast static random access memory designed to provide a burstable, high-performance, secondary cache


    OCR Scan     		PDF MCM67B618A/D MCM67B618A i486TM MCM67B618A

    circuit diagrams retu 3.02

    Abstract: APPLIED MICROSYSTEMS CORP 68020 a23 445-1 VMIVME DR11W 0000A018 Panduit 050-040-455 S43A MC68153 perkin
    Text: VMIVME-DR11W-A VMEbus-T0-DR11W INTERFACE INSTRUCTION MANUAL DOCUMENT NO. 500-000121-000 E Revised 08 December 1993 VME MICROSYSTEMS INTERNATIONAL CORPORATION 12090 SOUTH MEMORIAL PARKWAY HUNTSVILLE, AL 35803-3308 205 880-0444 1-800-322-3616 N O T IC E The information in this document has been carefully checked and is


    OCR Scan     		PDF VMIVME-DR11W-A VMEbus-T0-DR11W VMIC60 000009D8 00000A8C DR11WA 00126C 00127C FF00FF00 00128C circuit diagrams retu 3.02 APPLIED MICROSYSTEMS CORP 68020 a23 445-1 VMIVME DR11W 0000A018 Panduit 050-040-455 S43A MC68153 perkin

    Untitled

    Abstract: No abstract text available
    Text: AC-AC W ALL P LU G -IN TR A N S FO R M ER S 1 2 0 V A C , 60 H z . A N D 2 2 0 V A C , 5 0 H i. DVE File No. E82180 File No. LR38236 File No. 7969-3330, 7969-3331 MICROTRAN. FEATURES • UL Class II Xfmrs-UL 1310. • UL 544 Medical Capability • Thermal Overload Protection.


    OCR Scan     		PDF E82180 LR38236 94-V0. TRANSFORMERS-120VAC 310A0001 470A0003 825A0007G 420A0001 310A0002 825A000icated

    FA 4301

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM67B618A Product Preview 64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM67B618A is a 1,179,648 bit synchronous fast static random access memory designed to provide a burstable, high-performance, secondary cache


    OCR Scan     		PDF MCM67B618A MCM67B618A i486TM MCM67B618AFN9 MCM67B618AFN9s 67B618A 67B618AFN8 67B618AFN9 67B618AZP9 FA 4301

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA £ Q SC -CHEHORY/ASI bSE D • L 3 b 7 2 S l M O TO R O LA bTT ■ N0T3 62S950A 32K x 9 Bit Synchronous Static RAM E LEC TR IC A LLY T E S T E D PER: M PG 62S950A The 62S950A is a 294,912 bit synchronous static random access memory organized as 32,768 words of 9 bits, fabricated using Motorola's


    OCR Scan     		PDF 62S950A 62S950A 310A0

    i486 SL

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 64K x 18 Bit BurstRAM Synchronous Fast Static RAM MCM67B618 With Burst Counter and Self-Timed Write The MCM67B618 is a 1,179,648 bit synchronous fast static random access memory designed to provide a burstable, high- performance, secondary cache


    OCR Scan     		PDF MCM67B618 i486TM MCM67B61BFN9 MCM67B618FN9s 67B618 67B618FN9 67B618FN10 67B618FN12 i486 SL

    UPD42S4800-70

    Abstract: No abstract text available
    Text: NEC b l4S7S2S O Om iD*! m • NECEj A T A SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S4800, 424800 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE DESCRIPTION The /IPD42S4800, 424800 are 524 288 words by 8 bits dynam ic CMOS RAMs. The fast page mode capability


    OCR Scan     		PDF PD42S4800, /IPD42S4800, /iPD42S4800 28-pin b42755s UPD42S4800, jiPD42S4800, PD42S4800G5, UPD42S4800-70

    mcm2018a

    Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
    Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information


    OCR Scan     		PDF A16685-7 EMTR1147 mcm2018a sun hold RAS 0610 cqq 765 RT IC HX 710B U256D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM69H618 Product Preview 64Kx 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write The MCM69H618 is a 1,179,648 bit synchronous fast static random access memory designed to provide a burstable, high-performance, secondary cache


    OCR Scan     		PDF MCM69H618 MCM69H618 i486TM MCM69H618FN8 MCM69H618FN8s 69H618 MCM6HH618FN8 69H618FN10 69H618FN12

    210xB

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC™ PReP/CHRP Platforms MPC2105B MPC2106B The MPC2105B and the MPC2106B are designed to provide burstable, high performance L2 cache for the PowerPC 60x microprocessor family in conformance


    OCR Scan     		PDF 512KB MPC2105B MPC2106B MPC2108B 210xB

    Untitled

    Abstract: No abstract text available
    Text: •an ‘AHlSnaN I S0IN0H10313 N O U V I A V NVdVP 9SE00LPS I CA3U ‘EOOZ O) IHOIHAdOO 33dd •AdViaiddOdd -Aia H0103NNOO 3VP ( 1 H0 I3M)¥1 •QddV ( ’ON ONIMVaa)^-#MH CO 'QddV 0 0 2 Id-L N - 0 9 d A - d * - d M • a n ‘A H i s n a N i S0IN0dl0313


    OCR Scan     		PDF S0IN0H10313 9SE00LPS H0103NNOO S0IN0dl0313 S310NV 30NVH3H01 HVH3N30 319V1 H0103NN00 310A03H

    MSM514266

    Abstract: No abstract text available
    Text: O K I semiconductor MSM514266B_ 262,144-WORD x 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The M S M 514266B is a new generation dynamic RAM organized as 262,144 words x 4 bits. The technology used to fabricate the M SM 514266B is O K I’s C M O S silicon gate process technology.


    OCR Scan     		PDF MSM514266B_ 144-WORD 514266B MSM514266