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    30V P-CHANNEL MOSFET Search Results

    30V P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0393DPA-00#J53 Renesas Electronics Corporation 30V, 40A, 4.3MΩ Max. N Channel Power MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    30V P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JESD97

    Abstract: S8C5H30L STS8C5H30L
    Text: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced


    Original     		PDF STS8C5H30L STS8C5H30L JESD97 S8C5H30L

    Untitled

    Abstract: No abstract text available
    Text: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced


    Original     		PDF STS8C5H30L STS8C5H30L

    JESD97

    Abstract: S8C5H30L STS8C5H30L
    Text: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/p-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET Features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced ■ Switching losses reduced


    Original     		PDF STS8C5H30L STS8C5H30L JESD97 S8C5H30L

    F1S60P03

    Abstract: f1s60 RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 TB334
    Text: [ /Title RFG60 P03, RFP60P 03, RF1S60 P03, RF1S60 P03SM /Subject (60A, 30V, RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM Semiconductor 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 60A, 30V These P-Channel power MOSFETs are manufactured using


    Original     		PDF RFG60 RFP60P RF1S60 P03SM) RFG60P03, RFP60P03, RF1S60P03, RF1S60P03SM 80e-2 F1S60P03 f1s60 RF1S60P03 RF1S60P03SM RFG60P03 RFP60P03 TB334

    ZXM63C03

    Abstract: ZXMD63C03X ZXMD63C03XTA ZXMD63C03XTC 1p63
    Text: ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=30V; RDS(ON)=0.135⍀; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185⍀; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique


    Original     		PDF ZXMD63C03X ZXM63C03 ZXMD63C03X ZXMD63C03XTA ZXMD63C03XTC 1p63

    MO-187

    Abstract: ZXM63C03 ZXMD63C03X ZXMD63C03XTA ZXMD63C03XTC DSA003665
    Text: ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=30V; RDS(ON)=0.135⍀; ID=2.3A P-CHANNEL: V(BR)DSS DSS=-30V; RDS(ON)=0.185⍀; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique


    Original     		PDF ZXMD63C03X D-81673 MO-187 ZXM63C03 ZXMD63C03X ZXMD63C03XTA ZXMD63C03XTC DSA003665

    CTLDM30

    Abstract: No abstract text available
    Text: Product Brief CTLDM303N-M832DS 30V, 3.6A N-Channel CTLDM304P-M832DS (30V, 4.2A P-Channel) Dual, MOSFETs in the TLM832DS package TLM832DS Typical Electrical Characteristics Central Semiconductor’s CTLDM303N-M832DS (Dual, N-Channel) and CTLDM304P-M832DS (Dual, P-Channel) are enhancement-mode


    Original     		PDF CTLDM303N-M832DS CTLDM304P-M832DS TLM832DS TLM832DS CTLDM303N-M832DS CTLDM304P-M832DS 21x9x9 27x9x17 CTLDM30

    FDS8858CZ

    Abstract: fds8858
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858CZ fds8858

    FDS8858CZ

    Abstract: fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858CZ fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180

    FDS8858

    Abstract: No abstract text available
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

    Abstract: No abstract text available
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858CZ N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

    ZXM63C03

    Abstract: TS16949 ZXMD63C03X ZXMD63C03XTA ZXMD63C03XTC
    Text: ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMD63C03X D-81541 ZXM63C03 TS16949 ZXMD63C03X ZXMD63C03XTA ZXMD63C03XTC

    zxm63c03

    Abstract: ZXMD63C03XTC ZXMD63C03X ZXMD63C03XTA P-CHANNEL 30V DS MOSFET
    Text: ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMD63C03X zxm63c03 ZXMD63C03XTC ZXMD63C03X ZXMD63C03XTA P-CHANNEL 30V DS MOSFET

    Untitled

    Abstract: No abstract text available
    Text: ZXMD63C03X 30V DUAL N AND P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY N-CHANNEL: V BR DSS=30V; RDS(ON)=0.135 ; ID=2.3A P-CHANNEL: V(BR)DSS=-30V; RDS(ON)=0.185 ; ID=-2.0A DESCRIPTION This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching


    Original     		PDF ZXMD63C03X D-81541

    Transistor Mosfet N-Ch 30V

    Abstract: STS7C4F30L
    Text: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω


    Original     		PDF STS7C4F30L STS7C4F30L Transistor Mosfet N-Ch 30V

    STS7C4F30L

    Abstract: Transistor Mosfet N-Ch 30V
    Text: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω


    Original     		PDF STS7C4F30L STS7C4F30L Transistor Mosfet N-Ch 30V

    STS7C4F30L

    Abstract: P Channel STripFET Transistor Mosfet N-Ch 30V
    Text: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω


    Original     		PDF STS7C4F30L STS7C4F30L P Channel STripFET Transistor Mosfet N-Ch 30V

    27BSC

    Abstract: MS-012AA ZXMC3A17DN8 ZXMC3A17DN8TA ZXMC3A17DN8TC
    Text: ZXMC3A17DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel : V BR DSS= 30V : RDS(on)= 0.050 ; ID= 5.4A P-Channel : V(BR)DSS= -30V : RDS(on)= 0.070 ; ID= -4.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that


    Original     		PDF ZXMC3A17DN8 27BSC MS-012AA ZXMC3A17DN8 ZXMC3A17DN8TA ZXMC3A17DN8TC

    Untitled

    Abstract: No abstract text available
    Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure


    Original     		PDF ZXMC3A16DN8 ZXMC3A16DNlephone:

    ZXMC3A16DN8

    Abstract: ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16
    Text: ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.048 ; ID= -5.4A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure


    Original     		PDF ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8 ZXMC3A16DN8TA ZXMC3A16DN8TC zxmc 3a16

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use ZXMC3AMCTA ZXMC3AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V BR DSS = 30V; RDS(ON) = 0.12 ; ID= 3.7A P-Channel V(BR)DSS = -30V; RDS(ON) = 0.21 ; ID= -2.7A


    Original     		PDF ZXMC3AM832

    Untitled

    Abstract: No abstract text available
    Text: ZXMC3A18DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel = V BR DSS= 30V : RDS(on)= 0.025 ; ID= 7.6A P-Channel = V(BR)DSS= -30V : RDS(on)= 0.035 ; ID= -6.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that


    Original     		PDF ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC

    Transistor Mosfet N-Ch 30V

    Abstract: STS8C5H30L S8C5H30L P-CHANNEL
    Text: STS8C5H30L N-CHANNEL 30V - 0.018Ω - 8A SO-8 P-CHANNEL 30V - 0.045Ω - 5A SO-8 LOW GATE CHARGE StripFET III MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STS8C5H30L (N-Channel) STS8C5H30L (P-Channel) 30 V 30 V < 0.022 Ω < 0.055 Ω


    Original     		PDF STS8C5H30L Transistor Mosfet N-Ch 30V STS8C5H30L S8C5H30L P-CHANNEL

    Untitled

    Abstract: No abstract text available
    Text: RF1K49224 33 3.5A and 2.5A, 30V, 0.060 and 0.150 Ohms, Complementary LittleFET Power MOSFET June 1997 Features Description • 3.5A, 30V N-Channel 2.5A, 30V (P-Channel) • Peak Current vs Pulse Width Curve The RF1K49224 com plem entary power MOSFET is


    OCR Scan     		PDF RF1K49224 RF1K49224 1-800-4-HARRIS