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    30N60 Search Results

    30N60 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SiT1602BC-21-30N-60.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BC-22-30N-6.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BC-73-30N-60.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BC-81-30N-6.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BI-12-30N-60.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SiT1602BI-32-30N-60.000000 SiTime 3.57 to 77.76 MHz, Low Power Oscillator Datasheet
    SF Impression Pixel

    30N60 Price and Stock

    Rochester Electronics LLC HGTG30N60C3D

    IGBT 600V 63A TO247
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    DigiKey HGTG30N60C3D Bulk 7,113 44
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    Rochester Electronics LLC NGTB30N60IHLWG

    IGBT TRENCH FS 600V 60A TO247-3
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    DigiKey NGTB30N60IHLWG Tube 5,700 129
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    Infineon Technologies AG IKW30N60TFKSA1

    IGBT TRENCH FS 600V 60A TO247-3
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    DigiKey IKW30N60TFKSA1 Tube 4,489 1
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    Mouser Electronics IKW30N60TFKSA1 1,374
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    Rochester Electronics IKW30N60TFKSA1 14 1
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    TME IKW30N60TFKSA1 1
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    Chip1Stop IKW30N60TFKSA1 Tube 240
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    New Advantage Corporation IKW30N60TFKSA1 180 1
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    IXYS Corporation IXGH30N60C3D1

    IGBT 600V 60A 220W TO247
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    DigiKey IXGH30N60C3D1 Tube 1,391 1
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    Mouser Electronics IXGH30N60C3D1 489
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    TTI IXGH30N60C3D1 Tube 120 30
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    Infineon Technologies AG IGB30N60H3ATMA1

    IGBT TRENCH FS 600V 60A TO263-3
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    DigiKey IGB30N60H3ATMA1 Reel 1,000 1,000
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    IGB30N60H3ATMA1 Cut Tape 492 1
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    Bristol Electronics IGB30N60H3ATMA1 172
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    TME IGB30N60H3ATMA1 1
    • 1 $2.5
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    Chip1Stop IGB30N60H3ATMA1 Cut Tape 370
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    • 10 $1.96
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    New Advantage Corporation IGB30N60H3ATMA1 1,000 1
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    Find more 30N60 price and stock on Findchips.com

    30N60 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    30N60C3 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    30N60C3D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    30N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30n60b

    Abstract: 30N60 30N60C ic 931
    Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 30N60B 30N60C O-268 O-247 30n60b 30N60 30N60C ic 931

    30N60P

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated IXFH 30N60P IXFT 30N60P IXFV 30N60P IXFV 30N60PS VDSS ID25 = = RDS on ≤ ≤ trr Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF 30N60P 30N60PS O-268 PLUS220 30N60P

    Untitled

    Abstract: No abstract text available
    Text: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D fl D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 30N60C5 O-247 20090209d

    30N60P

    Abstract: 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 30N60P 30N60PS O-268 PLUS220 30N60P 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p

    30n60

    Abstract: 30N60B2
    Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2 IC110 O-220 30n60 30N60B2

    30N60B2

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2 IC110 O-268 30N60B2

    30n60c

    Abstract: No abstract text available
    Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 30N60B 30N60C O-247 O-268

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2D1 IC110

    Untitled

    Abstract: No abstract text available
    Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous


    Original     		PDF 30N60B 30N60C O-268

    30n60b

    Abstract: 30n60 TO-247AA 15a020
    Text: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 IXGT 30N60BU1 Combi Pack VCES IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		PDF 30N60BU1 O-268 IC110 O-247 728B1 30n60b 30n60 TO-247AA 15a020

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 VCES IXGT 30N60BU1 IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous


    Original     		PDF 30N60BU1 O-268 IC110 30N60BU1

    30N60B2D1

    Abstract: ixgh30n60b2d1
    Text: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2D1 IC110 O-247 O-268 728B1 123B1 065B1 ixgh30n60b2d1

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode VCES = 600 V IC25 = 60 A VCE sat = 1.8 V tfi(typ) = 100 ns IXGH 30N60BD1 IXGT 30N60BD1 Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V


    Original     		PDF 30N60BD1 30N60BD1 O-247 O-268 O-268

    30N60B

    Abstract: 30N60C
    Text: High Speed IGBT VCES Short Circuit SOA Capability IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B 30N60C O-247 O-268 30N60C

    30n60p

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ 30N60P IXTT 30N60P PolarHVTM Power MOSFET VDSS ID25 = 600 V = 30 A ≤ 240 mΩ Ω RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V


    Original     		PDF 30N60P 30N60P O-268 O-268 405B2

    4013V

    Abstract: Siemens DIODE E 1220 30N60B2D1
    Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 30N60B2D1 30N60B2D1 IC110 O-247 O-268 4013V Siemens DIODE E 1220

    MOSFET IXYS TO-220

    Abstract: No abstract text available
    Text: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) TO-220 AB (IXKP)


    Original     		PDF 30N60C5 O-247 O-220 MOSFET IXYS TO-220

    Untitled

    Abstract: No abstract text available
    Text: IXKH 30N60C5 COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 30N60C5 O-247 20080310b

    UPS SIEMENS

    Abstract: 30N60C siemens servo motor siemens igbt
    Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads)


    Original     		PDF 30N60C2 IC110 O-220 UPS SIEMENS 30N60C siemens servo motor siemens igbt

    30n60

    Abstract: 30N60P PLUS220SMD
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = 600 V = 30 A Ω RDS on ≤ 240 mΩ Symbol Test Conditions Maximum Ratings


    Original     		PDF 30N60P 30N60PS O-247 PLUS220 30N60P 30n60 PLUS220SMD

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM


    Original     		PDF 30N60C2D1 IC110 O-247 O-268

    B1116

    Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
    Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40


    OCR Scan     		PDF O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1

    1XYS

    Abstract: No abstract text available
    Text: a ix Y S 1 Preliminary Data Sheet v CES IXGH 30N60B IXGH 30N60BS ^C25 vv CE sat HiPerFAST IGBT = 600 V = 60 A = 1.8 V = 130 ns tfi TO-247 SMD (30N60BS) Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RQE= 1 M il


    OCR Scan     		PDF 30N60B 30N60BS 13/10Nm/lb O-247 1XYS

    Untitled

    Abstract: No abstract text available
    Text: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF 30N60BD1 O-268 O-247