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    30MHZ 150W Search Results

    30MHZ 150W Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    A9786-A Coilcraft Inc SMPS Transformer, 150W Visit Coilcraft Inc Buy
    TAS5624ADDV Texas Instruments 150W Stereo/300W Mono PurePath HD Digital-Input Power Stage 44-HTSSOP 0 to 70 Visit Texas Instruments Buy
    TAS5614LADDV Texas Instruments 150W Stereo/300W Mono HD Digital-Input Power Stage 44-HTSSOP 0 to 125 Visit Texas Instruments Buy
    TAS5624ADDVR Texas Instruments 150W Stereo/300W Mono PurePath HD Digital-Input Power Stage 44-HTSSOP 0 to 70 Visit Texas Instruments Buy
    TAS5614LADDVR Texas Instruments 150W Stereo/300W Mono HD Digital-Input Power Stage 44-HTSSOP 0 to 125 Visit Texas Instruments Buy
    TAS5614APHD Texas Instruments 150W Stereo/300W MONO PurePath™ HD Digital-Input Power Stage 64-HTQFP 0 to 70 Visit Texas Instruments Buy

    30MHZ 150W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    150w

    Abstract: MAPF-250128-150000 mapf250128
    Text: MAPF-250128-150000 Linear RF Power TMOS 150W, 30MHz 100V M/A-COM Products Preliminary - Rev. 1108 Features • Designed for Industrial, Scientific, Medical applications • N-Channel enhancement mode MOSFET • Specified 100V, 30MHz and 128MHz, Class AB • Internally insulated Source terminals simplify


    Original     		PDF MAPF-250128-150000 30MHz 128MHz, 30MHz) 128MHz) 300arget 150w MAPF-250128-150000 mapf250128

    Untitled

    Abstract: No abstract text available
    Text: MAPF-250128-150000 Linear RF Power TMOS 150W, 30MHz 100V M/A-COM Products Preliminary - Rev. 1108 Features • Designed for Industrial, Scientific, Medical applications • N-Channel enhancement mode MOSFET • Specified 100V, 30MHz and 128MHz, Class AB • Internally insulated Source terminals simplify


    Original     		PDF MAPF-250128-150000 30MHz 128MHz, 30MHz) 128MHz)

    Untitled

    Abstract: No abstract text available
    Text: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)


    Original     		PDF 2SC2510A 30MHz 28MHz 150WPEP -30dB 2-13B1A

    2SC2510

    Abstract: 2sc2510 transistor application
    Text: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)


    Original     		PDF 2SC2510 30MHz 28MHz 150WPEP -30dB 001MHz, 000MHz, 001MHz 2SC2510 2sc2510 transistor application

    j4315

    Abstract: 2sc5200 Spice Models 2SC5200 2sc5200 amplifier circuit FJL4315RTU TRANSISTOR 2SC5200 C5200O J4315O FJL4315OTU 2SC5242* datasheet
    Text: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A. High Power Dissipation : 150watts. High Fequency : 30MHz.


    Original     		PDF 2SC5200/FJL4315 150watts. 30MHz. 2SA1943/FJL4215. 2SC5242/FJA4313 FJP5200 O220F FJPF5200 O-264 j4315 2sc5200 Spice Models 2SC5200 2sc5200 amplifier circuit FJL4315RTU TRANSISTOR 2SC5200 C5200O J4315O FJL4315OTU 2SC5242* datasheet

    j4215

    Abstract: 2sa1943 transistor A1943 2sa1943 amplifier power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 2sa1943 Spice Models 2sc5200 amplifier J4215O 2sC5200, 2SA1943
    Text: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -17A. High Power Dissipation : 150watts. High Frequency : 30MHz.


    Original     		PDF 2SA1943/FJL4215 150watts. 30MHz. -250V 2SC5200/FJL4315. 2SA1962/FJA4213 FJP1943 O220F FJPF1943 O-264 j4215 2sa1943 transistor A1943 2sa1943 amplifier power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 2sa1943 Spice Models 2sc5200 amplifier J4215O 2sC5200, 2SA1943

    j4215

    Abstract: A1943 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 transistor J4215O 2SA1943 J4215R 2sa1943 amplifier 2sC5200, 2SA1943 spice model 2SC5200
    Text: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 150watts. High Frequency : 30MHz.


    Original     		PDF 2SA1943/FJL4215 150watts. 30MHz. -230V 2SC5200/FJL4315. 2SA1962/FJA4213 FJP1943 O220F FJPF1943 O-264 j4215 A1943 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sa1943 transistor J4215O 2SA1943 J4215R 2sa1943 amplifier 2sC5200, 2SA1943 spice model 2SC5200

    2SC2510A

    Abstract: 2sc2510 transistor application 2SC2510
    Text: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)


    Original     		PDF 2SC2510A 30MHz 28MHz 150WPEP -30dB 2SC2510A 2sc2510 transistor application 2SC2510

    j4315

    Abstract: No abstract text available
    Text: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz.


    Original     		PDF 2SC5200/FJL4315 150watts. 30MHz. to2SA1943/FJL4215. 2SC5242/FJA4313 FJP5200 O220F FJPF5200 O-264 j4315

    j4215

    Abstract: 2sa1943 2sc5200 amplifier circuit amplifier design 2SA1943 2sC5200, 2SA1943 A1943 2sa1943 transistor 2SC5200
    Text: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 150watts. High Fequency : 30MHz.


    Original     		PDF 2SA1943/FJL4215 150watts. 30MHz. -230V 2SC5200/FJL4315. 2SA1962/FJA4213 FJP1943 O220F FJPF1943 j4215 2sa1943 2sc5200 amplifier circuit amplifier design 2SA1943 2sC5200, 2SA1943 A1943 2sa1943 transistor 2SC5200

    j4315

    Abstract: c5200 2sc5200 amplifier circuit J4315O 2sc5200 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sc5200 Spice Models 2sc5200 amplifier 2sc5200 transistor 2sc5200 amplifiers
    Text: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 17A. High Power Dissipation : 150watts. High Frequency : 30MHz.


    Original     		PDF 2SC5200/FJL4315 150watts. 30MHz. 2SA1943/FJL4215. 2SC5242/FJA4313 FJP5200 O220F FJPF5200 O-264 j4315 c5200 2sc5200 amplifier circuit J4315O 2sc5200 power amplifier 2sc5200 2sa1943 TRANSISTOR 2sc5200 Spice Models 2sc5200 amplifier 2sc5200 transistor 2sc5200 amplifiers

    j4215

    Abstract: amplifier design 2sc5200 2sa1943 A1943 2sa1943 2sc5200 audio circuit spice 2sc5200 2sC5200, 2SA1943 spice model 2SC5200 2sa1943 2sa1943 amplifier J4215O
    Text: 2SA1943/FJL4215 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = -15A. High Power Dissipation : 150watts. High Frequency : 30MHz.


    Original     		PDF 2SA1943/FJL4215 150watts. 30MHz. -230V 2SC5200/FJL4315. 2SA1962/FJA4213 FJP1943 O220F FJPF1943 O-264 j4215 amplifier design 2sc5200 2sa1943 A1943 2sa1943 2sc5200 audio circuit spice 2sc5200 2sC5200, 2SA1943 spice model 2SC5200 2sa1943 2sa1943 amplifier J4215O

    j4315

    Abstract: C5200 power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 J4315O 2sc5200 Spice Models 2sc5200 spice 2sc5200 2sc5200 transistor 2sc5200 amplifier
    Text: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A. High Power Dissipation : 150watts. High Frequency : 30MHz.


    Original     		PDF 2SC5200/FJL4315 150watts. 30MHz. 2SA1943/FJL4215. 2SC5242/FJA4313 FJP5200 O220F FJPF5200 O-264 j4315 C5200 power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 J4315O 2sc5200 Spice Models 2sc5200 spice 2sc5200 2sc5200 transistor 2sc5200 amplifier

    j4315

    Abstract: C5200 2sc5200 amplifier circuit power amplifier 2sc5200 2sa1943 TRANSISTOR j4315o 2sc5200 2sc5200 transistor use audio amplifiers amplifier 2sC5200, 2SA1943 2sc5200 transistor FJL4315RTU
    Text: 2SC5200/FJL4315 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A. High Power Dissipation : 150watts. High Frequency : 30MHz.


    Original     		PDF 2SC5200/FJL4315 150watts. 30MHz. 2SA1943/FJL4215. 2SC5242/FJA4313 FJP5200 O220F FJPF5200 O-264 2SC5200/FJL4315 j4315 C5200 2sc5200 amplifier circuit power amplifier 2sc5200 2sa1943 TRANSISTOR j4315o 2sc5200 2sc5200 transistor use audio amplifiers amplifier 2sC5200, 2SA1943 2sc5200 transistor FJL4315RTU

    2SC2510

    Abstract: 2SC2510A
    Text: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)


    Original     		PDF 2SC2510A 30MHz 28MHz 150WPEP -30dB 2SC2510 2SC2510A

    MRF428

    Abstract: No abstract text available
    Text: MRF428 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.


    Original     		PDF MRF428 30MHz, MRF428

    Untitled

    Abstract: No abstract text available
    Text: MRF428 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 50V M/A-COM Products Released - Rev. 07.07 Designed primarily for high-voltage applications as a high-power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.


    Original     		PDF MRF428 30MHz,

    MRF429

    Abstract: 30MHZ 150W MRF429 equivalent RF POWER TRANSISTOR 150w
    Text: MRF429 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.


    Original     		PDF MRF429 30MHz, MRF429 30MHZ 150W MRF429 equivalent RF POWER TRANSISTOR 150w

    Untitled

    Abstract: No abstract text available
    Text: MRF429 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 50V M/A-COM Products Released - Rev. 07.07 Designed primarily for high–voltage applications as a high–power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.


    Original     		PDF MRF429 30MHz,

    VRF151

    Abstract: vertical mosfet RF POWER VERTICAL MOSFET
    Text: 150W, 50V, 175MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF151 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 14dB TYPICAL GAIN @ 175MHz, 50V 150W WITH 22dB TYPICAL GAIN @ 30MHz, 50V


    Original     		PDF 175MHz VRF151 175MHz, 30MHz, VRF151 vertical mosfet RF POWER VERTICAL MOSFET

    VRF150

    Abstract: hf power transistor mosfet 30MHZ 150W RF POWER VERTICAL MOSFET
    Text: 150W, 50V, 150MHz N-CHANNEL RF POWER VERTICAL MOSFET VRF150 PRELIMINARY INFORMATION BROADBAND HF/VHF VERTICAL D-MOS ISM & MILITARY/COMMERCIAL COMMUNICATIONS APPLICATIONS Features • • • • • • • 150W WITH 10dB TYPICAL GAIN @ 150MHz, 50V 150W WITH 18dB MIN GAIN @ 30MHz, 50V


    Original     		PDF 150MHz VRF150 150MHz, 30MHz, VRF150 250mA, hf power transistor mosfet 30MHZ 150W RF POWER VERTICAL MOSFET

    MRF422

    Abstract: 28v 30MHZ MRF422 datasheet 28v 150w 30MHZ
    Text: MRF422 The RF Line NPN Silicon Power Transistor 150W PEP , 30MHz, 28V M/A-COM Products Released - Rev. 07.07 Designed primarily for applications as a high–power linear amplifier from 2.0 Product Image to 30 MHz. • • • Specified 28 V, 30 MHz characteristics —


    Original     		PDF MRF422 30MHz, MRF422 28v 30MHZ MRF422 datasheet 28v 150w 30MHZ

    E5OU

    Abstract: 2-13B1A Ferrite core TDK 2SC2510 50wv 10ID 1S1555
    Text: TOSHIBA 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power Po = 150WpEP (Min.) Power Gain Gp = 12.2dB (Min.)


    OCR Scan     		PDF 2SC2510 30MHz 28MHz 150Wpep 000MHz 001MHz 100mA 961001EAA2' E5OU 2-13B1A Ferrite core TDK 2SC2510 50wv 10ID 1S1555

    Ferrite core TDK

    Abstract: 2sc2510
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2 '30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE Unit in mm FEATURES: . Specified 28V, 28MHz Characteristics : Output Power : P o =150Wp e P : Minimum Gain : Gpe=12.2dB : Efficiency : ^c=35%(Min.)


    OCR Scan     		PDF 2SC2510 30MHz 28MHz 150Wp -30dB Tc-25 Po-150WpEp 2SC2510----------------- 150pF 1S1555 Ferrite core TDK 2sc2510