2N2369A
Abstract: No abstract text available
Text: NPN SWITCHING TRANSISTOR 2N2369A • Silicon Planer Epitaxial NPN Transistor • Hermetic TO18 Metal Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO
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2N2369A
200mA
360mW
O-206AA)
2N2369A
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Untitled
Abstract: No abstract text available
Text: NPN SWITCHING TRANSISTOR 2N2369A • Silicon Planer Epitaxial NPN Transistor • Hermetic TO18 Metal Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO
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Original
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2N2369A
200mA
360mW
06mW/Â
80mW/Â
O-206AA)
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN SWITCHING TRANSISTOR 2N2369ACSM • Silicon Planer Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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Original
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2N2369ACSM
200mA
360mW
06mW/Â
80mW/Â
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PDF
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ts 4141 TRANSISTOR
Abstract: No abstract text available
Text: NPN SWITCHING TRANSISTOR 2N2369ACSM • Silicon Planer Epitaxial NPN Transistor • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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Original
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2N2369ACSM
200mA
360mW
ts 4141 TRANSISTOR
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PDF
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TS 4140
Abstract: 2N2369ADCSM
Text: DUAL NPN SWITCHING TRANSISTORS 2N2369ADCSM • Dual Silicon Planer Epitaxial NPN Transistors • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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Original
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2N2369ADCSM
200mA
360mW
500mW
MO-041BB)
TS 4140
2N2369ADCSM
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PDF
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Untitled
Abstract: No abstract text available
Text: DUAL NPN SWITCHING TRANSISTORS 2N2369ADCSM • Dual Silicon Planer Epitaxial NPN Transistors • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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Original
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2N2369ADCSM
200mA
360mW
MO-041BB)
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PDF
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MHQ2222
Abstract: No abstract text available
Text: MHQ2222 MECHANICAL DATA Quad Dual-In-Line NPN Silicon Transistors Dimensions in mm inches 0.457 ± 0.102 (0.018 ± 0.004) 14 FEATURES 8 • • • V(BR)CEO = 40V (Min) Hermetic Package Screening Options Available APPLICATIONS 1 2.134 (0.084) 7 • • General Purpose Switching
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MHQ2222
150mA
3001s,
MHQ2222
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PDF
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MHQ2222
Abstract: No abstract text available
Text: MHQ2222 MECHANICAL DATA Quad Dual-In-Line NPN Silicon Transistors Dimensions in mm inches 0.457 ± 0.102 (0.018 ± 0.004) 14 FEATURES 8 • • • V(BR)CEO = 40V (Min) Hermetic Package Screening Options Available APPLICATIONS 1 2.134 (0.084) 7 • • General Purpose Switching
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MHQ2222
500mA
150mA
MHQ2222
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PDF
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2N3725
Abstract: transistor 2N3725 2N3724 2n3725a
Text: 2N3724 2N3725 2N3725A NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3724, 2N3725, 2N3725A types are Silicon NPN Planar Epitaxial Transistors designed for high voltage, high current, high speed switching applications.
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2N3724
2N3725
2N3725A
2N3724,
2N3725,
2N3725A
2N3725
500mA,
transistor 2N3725
2N3724
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HP31 █ APPLICATIONS Mediuｍ Power Linear switching Applications. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-220 T stg ——Storage Temperature………………………… -55~150℃
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O-220
375mA
TestPW300sDuty
500mAf
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PDF
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18P4G
Abstract: 20P2N-A M54513FP M54513P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M54513P/FP 8-UNIT 50mA TRANSISTOR ARRAY DESCRIPTION M54513P and M54513FP are eight-circuit transistor arrays. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with
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M54513P/FP
M54513P
M54513FP
18P4G
20P2N-A
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PDF
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PN3567
Abstract: No abstract text available
Text: PN3567 PN3567 NPN General Purpose Amplifier • This device is for use as a medium amplifier and switch requiring collector currents up 300mA. • Sourced from process 19. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings TA=25°C unless otherwise noted
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PN3567
300mA.
PN3567
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PDF
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TIP29
Abstract: TIP30
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors TIP29 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 40V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat) = 0.7V(Max.)@IC= 1.0A ·Complement to Type TIP30
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TIP29
TIP30
TIP29
TIP30
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100ria
Abstract: 25V6K RN5305 2N4494
Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V
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OCR Scan
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2N3707
MPS3707
2N3708
MPS3708
2N3709
MPS3709
2N3701
MPS3710
2N3711
MPS3711
100ria
25V6K
RN5305
2N4494
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PDF
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TIP31
Abstract: TIP31A TIP31B TIP32 TIP32B
Text: TIP31,2 CRO SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. TPifdSISIDR Nil. MMtlrCri! ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage
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OCR Scan
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TIP31
TIP32
TIP31/2TIP31A/2A
TIP31B/2B
TIP31C/2C
TIP31BJIP32B
TIP31CJIP32C
375mA
300/iS,
Jan-96
TIP31A
TIP31B
TIP32B
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PDF
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Untitled
Abstract: No abstract text available
Text: TIP31,2 CRO SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. TPifdSISIDR Nil. MMtlrCri! ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage
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OCR Scan
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TIP31
TIP32
TIP31/2
TIP31A/2A
TIP31B/2B
TIP31C/2C
375mA
300/iS,
Jan-96
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PDF
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TIP31
Abstract: 103 MI tip312 TIP31A TIP32 TIP32A
Text: TIP31,2 SERIES COMPLEMENTARY SILICON POWER TRANSISTORS TIP31 series NPN & TIP32 series (PNP) are complementary silicon power transistors designed for power amplifiers and switching applications. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage
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OCR Scan
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TIP31
TIP32
hJiI51DR
TIP31/2
TIP31B/2B
TIP31C/2C
unlesIP31
103 MI
tip312
TIP31A
TIP32A
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PDF
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Untitled
Abstract: No abstract text available
Text: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481
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OCR Scan
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MMBT2369
BC818-16
BC818-25
BC818-40
BC848A
BC848B
BC848C
BCW31
BCW32
BCW33
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PDF
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Untitled
Abstract: No abstract text available
Text: c Transistor minil^eel' SOT23 SOT23 Case NPN minllfecl 4 - A _Iyi»_ — jA t u n in g s mtnlBasT Balk Ic h FE @lc mA M in -M a x VCE - - - - 60~ 20- 100 p c s VCEO V 73-8400 73-8410 73-0010 73-0918 53-8400 53-8410 53-0010 53-0918 40V 25mA 40V 25mA 25V 15V 350mA
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OCR Scan
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350mA
380MHz
650MHz
600MHz
200mA
300MHz
100mA
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PDF
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4 npn transistor ic 14pin
Abstract: D0183-01E 14pin npn transistor quad transistor PMI 14-PIN CERAMIC DIP TM325 0DQ7407 d0183
Text: A N AL OG DEVICES/ PHI DIV OS GfilbôDS 0 G G 7 4 0 7 3 MAT-04/883 MATCHED MONOLITHIC PMp QUAD TRANSISTOR P r e c is io n M o n o lith ic s In c . 1.0 SCOPE This specification covers the detail requirements for a quad monolithic NPN transistor. It is highly recommended that this data sheet be used as a baseline for new military or
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OCR Scan
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0DQ7407
MAT-04/883
MIL-M-38510)
14-lead
10/lA
100/iA
QQ0741S
D0183-01E
14-PIN
4 npn transistor ic 14pin
14pin npn transistor
quad transistor
PMI 14-PIN CERAMIC DIP
TM325
d0183
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PDF
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2N3569
Abstract: 2N3568 2N3567 transistor 2N3569 "NPN Transistors" 2n3567 World transistors and ic 2N3568 DATASHEET 2n3569 to-105 PN3567 PN3569
Text: Datasheet Central 2N3567 2N3568 2N3569 PN3567 PN3568 PN3569 JEDEC T0-105 JEDEC TO- 9 2 EBC Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors SILICON NPN TRANSISTORS
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OCR Scan
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2N3567
2N3568
2N3569
PN3567
PN3568
PN3569
T0-105
T0-92
2N3567,
2N3569
transistor 2N3569
"NPN Transistors" 2n3567
World transistors and ic
2N3568 DATASHEET
2n3569 to-105
PN3569
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PDF
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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OCR Scan
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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PDF
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Untitled
Abstract: No abstract text available
Text: TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C COMPLEMENTARY SILICON EPITAXIAL-BASE POWER TRANSISTORS IN/IICRO ELECTRONICS CASE T0-220B THE TIP29 SERIES NPN AND TIP 30 SERIES (PNP) ABE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED EOR POWER AMPLIFIERS AND
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OCR Scan
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TIP29
TIP29A
TIP29B
TIP29C
TIP30
TIP30A
TIP30B
TIP30C
T0-220B
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PDF
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TIP30B
Abstract: TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30C tg425
Text: TIP29 TIP29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C COMPLEMENTARY SILICON EPITAXIAL-BASE POWEK TRANSISTORS ei— EOTRorsiiGS m ic r o CASE T0-220B THE TIP29 SERIES NPN AND TIP 30 SERIES (PNP) ARE COMPLEMENTARY SILICON EPITAXIAL BASE POWER TRANSISTORS DESIGNED FOR POWER AMPLIFIERS AND
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OCR Scan
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TIP29
TIP29A
TIP29B
TIP29C
TIP30
TIP30A
TIP30B
TIP30C
T0-220B
tg425
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PDF
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