M58BW016xB
Abstract: M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80
Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers
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M58BW016BT,
M58BW016BB
M58BW016DT,
M58BW016DB
512Kb
100ns
56MHz
PQFP80
M58BW016B
LBGA80
M58BW016xB
M58BW016BB
M58BW016BT
M58BW016DB
M58BW016DT
PQFP80
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Untitled
Abstract: No abstract text available
Text: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V 28 28 ■ PIN COMPATIBLE with M27C256B ■ LOW POWER CONSUMPTION:
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M27W256
M27C256B
FDIP28W
PDIP28
200mA
PLCC32
TSOP28
M27W256
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58BW016DB
M58BW016DT
512Kb
56MHz
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la 7913
Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 00005H
Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for fast Program (optional)
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M58BW016DB
M58BW016DT
512Kb
56MHz
la 7913
JESD97
M58BW016D
M58BW016DB
M58BW016DT
PQFP80
00005H
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Q002
Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h
Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)
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M58BW016DB
M58BW016DT
512Kb
56MHz
Q002
JESD97
M58BW016D
M58BW016DB
M58BW016DT
PQFP80
13-May-2003
tbhk
M58BW016DB7
8835h
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m27c
Abstract: M27C25
Text: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM Features • 2.7V to 3.6V Supply Voltage in Read Operation ■ Access Time: – 70 ns at VCC = 3.0V to 3.6V – 80 ns at VCC = 2.7V to 3.6V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b
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M27W256
M27C256B
FDIP28W
PDIP28
PLCC32
TSOP28
m27c
M27C25
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M58BW016BB
Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80
Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers
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M58BW016BT,
M58BW016BB
M58BW016DT,
M58BW016DB
512Kb
100ns
56MHz
PQFP80
M58BW016B
LBGA80
M58BW016BB
M58BW016BT
M58BW016DB
M58BW016DT
PQFP80
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M27C256B
Abstract: M27W256 PDIP28 PLCC32
Text: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V 28 28 ■ PIN COMPATIBLE with M27C256B ■ LOW POWER CONSUMPTION:
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M27W256
M27C256B
FDIP28W
PDIP28
200mA
PLCC32
TSOP28
M27W256
M27C256B
PDIP28
PLCC32
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
512Kb
56MHz
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
512Kb
56MHz
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FDIP28WB
Abstract: JESD97 M27C256B M27W256 PDIP28 PLCC32
Text: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM Features • 2.7V to 3.6V Supply Voltage in Read Operation ■ Access Time: – 70 ns at VCC = 3.0V to 3.6V – 80 ns at VCC = 2.7V to 3.6V ■ 28 28 Pin Compatible with M27C256B 1 1 ■ Low Power Consumption:
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M27W256
M27C256B
PDIP28
FDIP28W
PLCC32
TSOP28
FDIP28WB
JESD97
M27C256B
M27W256
PDIP28
PLCC32
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M58BW016
Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
512Kb
56MHz
PQFP80
M58BW016
Q002
M58BW016DT
M58BW016FB
PQFP80
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)
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PDF
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
PQFP80
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Untitled
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
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M58BW016BB
Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80 m58bw016xb
Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers
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M58BW016BT,
M58BW016BB
M58BW016DT,
M58BW016DB
512Kb
100ns
56MHz
PQFP80
M58BW016B
LBGA80
M58BW016BB
M58BW016BT
M58BW016DB
M58BW016DT
PQFP80
m58bw016xb
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Untitled
Abstract: No abstract text available
Text: M27W256 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM Features • 2.7V to 3.6V Supply Voltage in Read Operation ■ Access Time: – 70 ns at VCC = 3.0V to 3.6V – 80 ns at VCC = 2.7V to 3.6V ■ Pin Compatible with M27C256B ■ Low Power Consumption:
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Original
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PDF
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M27W256
M27C256B
PLCC32
TSOP28
FDIP28W
PDIP28
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Untitled
Abstract: No abstract text available
Text: M27W512 512 Kbit 64 Kbit x8 low-voltage OTP EPROM Features • 2.7 to 3.6 V supply voltage in read operation ■ Access time: 100 ns ■ Pin compatibility with M27C512 ■ Low power consumption – 15 µA max Standby current – 15 mA max Active current at 5 MHz
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M27W512
M27C512
PLCC32
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M58BW016
Abstract: No abstract text available
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
M58BW016
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PLCC32
Abstract: J-STD-020B M27C512 M27W512 PDIP28 11PROGRAMMING
Text: M27W512 512 Kbit 64K x8 Low Voltage UV EPROM and OTP EPROM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ 2.7 to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0 to 3.6V – 80ns at VCC = 2.7 to 3.6V PIN COMPATIBLE with M27C512
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M27W512
M27C512
200mA
FDIP28W
PDIP28
PLCC32
TSOP28
PLCC32
J-STD-020B
M27C512
M27W512
PDIP28
11PROGRAMMING
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1N914
Abstract: M27C512 M27W512 PLCC32 M27C512 ST
Text: M27W512 512 Kbit 64 Kbit x8 low-voltage OTP EPROM Features • 2.7 to 3.6 V supply voltage in read operation ■ Access time: 100 ns ■ Pin compatibility with M27C512 ■ Low power consumption – 15 µA max Standby current – 15 mA max Active current at 5 MHz
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M27W512
M27C512
PLCC32
1N914
M27C512
M27W512
PLCC32
M27C512 ST
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Q002
Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 56MHZ M58BW016
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kb x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for Program, Erase and Read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for Fast Program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
PQFP80
Q002
M58BW016DT
M58BW016FB
PQFP80
56MHZ
M58BW016
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Q002
Abstract: M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80
Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)
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M58BW016DB
M58BW016DT
M58BW016FT
M58BW016FB
PQFP80
Q002
M58BW016DT
M58BW016FB
PQFP80
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Untitled
Abstract: No abstract text available
Text: o CD CM 7.20 + 0.15 O I-. M" T O LO o +1 LO 00 + CN 1.45 o o +1 n a: t] 0.2 + 0.05 SECTION A— A 1 5 i A Z-l NOTE : 1. MATERIAL HOUSING THERMOPLASTIC, U L 9 4 V -0 , BLACK COLOR. PHOSPHOR BRONZE. CONTACT 2. FINISH ; 8 // ” MIN. GOLD PLATED ON CONTACT AREA,
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30-AUG-20Q2
30-AUG-2002
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JD20
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - D RELEASED FOR PUBLICATION f r 5 c “ ID E N T IF IC A T IO N N U M B E R MAGNET WIRE RANGE t 1 f ALL RIGHT5 RESERVED. BY TYCO ELECTRONICS CORPORATION. r “ ^ 15 FOR 3 .2 5 3 .2 4 7 0 .5 1 h— 0 . 8 1 3 ± 0 . 0 2 5
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31MAR2000
280CT02
30AUG2002
JD20
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