SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
Abstract: No abstract text available
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 APT30SC60B 600V APT30SC60S 600V 30A 30A 2 SILICON CARBIDE SCHOTTKY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • PFC And Forward Topologies • Schottky Barrier
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APT30SC60B
APT30SC60S
O-247
Eli01
SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A
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Untitled
Abstract: No abstract text available
Text: YG838C03R 30A (30V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics
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YG838C03R
O-220F
500ns,
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TP868C15R
Abstract: No abstract text available
Text: TP868C15R 30A (150V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm Major characteristics Characteristics TP868C15R Units Condition 150 0.90 VRRM VF IO V V 30 A Package : T-pack Epoxy resin UL : V-0 Applications Features Low VF High Voltage
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TP868C15R
TP868C15R
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12cw10
Abstract: PH868C15
Text: PH868C15 30A (150V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm Major characteristics 11.6±0.2 Characteristics PH868C15 Units Condition 150 0.90 VRRM VF IO 30 V V Tc=25°C MAX. A Features Low VF High Voltage Center tap connection
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PH868C15
PH868C15
O-247
12cw10
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30A high speed diode
Abstract: No abstract text available
Text: YG838C03R 30A (30V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics
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Original
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PDF
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YG838C03R
O-220F
500ns,
YG838C04R
30A high speed diode
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TP868C12R
Abstract: No abstract text available
Text: TP868C12R 30A (120V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm Major characteristics Characteristics TP868C12R Units Condition 120 0.88 VRRM VF IO V V 30 A Package : T-pack Epoxy resin UL : V-0 Applications Features Low VF High Voltage
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PDF
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TP868C12R
TP868C12R
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PH868C12
Abstract: No abstract text available
Text: PH868C12 30A (120V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm Major characteristics 11.6±0.2 Characteristics PH868C12 Units Condition 120 0.88 VRRM VF IO 30 V V Tc=25°C MAX. A Features Low VF High Voltage Center tap connection
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Original
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PDF
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PH868C12
PH868C12
O-247
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Untitled
Abstract: No abstract text available
Text: TS868C12R 30A (120V / 30A ) [0402] High Voltage Schottky barrier diode 120 0.88 VRRM VF IO V V 30 1.5 Max Characteristics TS868C12R Units Condition Tc=25°C MAX. A 4.5 ±0.2 1.32 3.0 ±0.3 10 +0.5 9.3 ±0.5 Major characteristics 0.9 ±0.3 Outline drawings, mm
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TS868C12R
TS868C12R
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YG838C04R
Abstract: No abstract text available
Text: YG838C04R 30A (40V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics
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Original
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PDF
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YG838C04R
O-220F
500ns,
YG838C04R
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TP868C15R
Abstract: No abstract text available
Text: TP868C15R 30A (150V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm Major characteristics Characteristics TP868C15R Units Condition 150 0.90 VRRM VF IO V V 30 A Package : T-pack Epoxy resin UL : V-0 Applications Features Low VF High Voltage
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TP868C15R
TP868C15R
11tput
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TP868C12R
Abstract: No abstract text available
Text: TP868C12R 30A (120V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm Major characteristics Characteristics TP868C12R Units Condition 120 0.88 VRRM VF IO V V 30 A Package : T-pack Epoxy resin UL : V-0 Applications Features Low VF High Voltage
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TP868C12R
TP868C12R
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MBRB3045CT
Abstract: MBRB3045CT-1 MBRF3035CT MBR3035CT MBR3045CT MBRB3035CT MBRB3035CT-1 MBRF3045CT
Text: MBR3045CT, MBRF3045CT & MBRB3045CT/CT-1 Series Vishay Semiconductors New Product formerly General Semiconductor Dual Schottky Rectifiers A1 K A2 TO-220AB ITO-220AB Reverse Voltage 30 to 45V Forward Current 30A Max. Forward Voltage 0.76V at 30A Max. Junction Temperature 150°C
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MBR3045CT,
MBRF3045CT
MBRB3045CT/CT-1
O-263AB
ITO-220AB
O-262AA
O-220AB
MBR3035CT
MBR3045CT
MBRF3035CT
MBRB3045CT
MBRB3045CT-1
MBRF3035CT
MBR3035CT
MBR3045CT
MBRB3035CT
MBRB3035CT-1
MBRF3045CT
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TS868C15R
Abstract: square wave to sine wave
Text: TS868C15R 30A (150V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 30 Tc=25°C, MAX. 1.32 3.0 ±0.3 IO V V 1.5 Max 150 0.90 4.5 ±0.2 9.3 ±0.5 10 +0.5 Characteristics TS868C15R Units Condition VRRM VF 0.9 ±0.3 Major characteristics
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TS868C15R
TS868C15R
square wave to sine wave
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Dual Schottky Rectifiers
Abstract: MBR3045CT "Dual Schottky Rectifiers" mbrb3045 MBR3035CT MBRB3035CT MBRB3035CT-1 MBRB3045CT MBRB3045CT-1 MBRF3035CT
Text: MBR3045CT, MBRF3045CT & MBRB3045CT /CT-1 Series A1 K A2 Dual Schottky Rectifiers t c u rod P New TO-220AB Reverse Voltage 30 to 45V Forward Current 30A Max. Forward Voltage 0.76V at 30A Max. Junction Temperature 150°C ITO-220AB TO-263AB TO-262AA D2Pak (I2Pak)
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MBR3045CT,
MBRF3045CT
MBRB3045CT
O-263AB
ITO-220AB
O-262AA
O-220AB
MBR3035CT
MBR3045CT
MBRF3035CT
Dual Schottky Rectifiers
MBR3045CT
"Dual Schottky Rectifiers"
mbrb3045
MBR3035CT
MBRB3035CT
MBRB3035CT-1
MBRB3045CT-1
MBRF3035CT
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FMB-2306
Abstract: No abstract text available
Text: 30A Schottky barrier diode in TO220F package FMB-2306 •Feature ●I F =30A in TO220F package ●Tj=150°C guaranteed ■Absolute maximum ratings Parameter Ratings Unit VRM 60 V IF AV 30 A IFSM 150 A 2 I t ■Electrical characteristics Conditions (Ta =25°C)
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O220F
FMB-2306
115max
400max
UL94V-0
FMB-2306
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ya868c12
Abstract: ya868c12r ya868
Text: YA868C12R 30A (120V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10+0.5 30 Tc=25°C MAX. 3.7±0.2 IO V V A 1.2 14 -0.5 120 0.88 15±0.2 Characteristics YA868C12R Units Condition 6.4±0.2 2.7±0.1 Major characteristics VRRM VF 4.5±0.2
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YA868C12R
YA868C12R
O-220
ya868c12
ya868
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YG868C12R
Abstract: No abstract text available
Text: YG868C12R 30A (120V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10±0.5 ø3.2 4.5±0.2 +0.2 -0.1 Major characteristics IO V V 30 A Features Low VF High Voltage Center tap connection 1 Tc=25°C MAX. 2 3 1.2±0.2 13Min 120 0.88
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YG868C12R
13Min
YG868C12R
O-220F
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YA868C15
Abstract: YA868C15R
Text: YA868C15R 30A (150V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10+0.5 30 Tc=25°C MAX. 3.7±0.2 IO V V A 1.2 14 -0.5 150 0.90 15±0.2 Characteristics YA868C15R Units Condition 6.4±0.2 2.7±0.1 Major characteristics VRRM VF 4.5±0.2
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YA868C15R
YA868C15R
O-220
YA868C15
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ESAD83M
Abstract: esad83m-004
Text: ESAD83M-004 30A (40V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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ESAD83M-004
ESAD83M
esad83m-004
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Untitled
Abstract: No abstract text available
Text: ESAD83M-006R 30A (60V / 30A ) Outline drawings, mm 15.5 ±0.3 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 20 Min 21.5 5.5 ±0.2 2.3 ±0.2 2.1±0.3 5.45 ±0.2 5.5 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 3.5 ±0.2 0.6 +0.2 1. Gate 2. Drain
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ESAD83M-006R
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Untitled
Abstract: No abstract text available
Text: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching
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TS808C06
500ns,
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD MBR30200C Preliminary DIODE 30A, 200V SCHOTTKY BARRIER RECTIFIER 1 DESCRIPTION TO-220 The UTC MBR30200C is a 30A schottky barrier rectifier, it uses UTC’s advanced technology to provide the customers with high surge capability, high efficiency, high current capability, low power loss and
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MBR30200C
O-220
MBR30200C
O-220F1
MBR30200CL-TA3-T
QW-RR202-011
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ESAD83M-006R
Abstract: No abstract text available
Text: ESAD83M-006R 30A (60V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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ESAD83M-006R
ESAD83M-006R
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W2212
Abstract: No abstract text available
Text: ESAD83M-004R 30A (40V / 30A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain
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ESAD83M-004R
W2212
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