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    30A HIGH SPEED DIODE Search Results

    30A HIGH SPEED DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    30A HIGH SPEED DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: YG838C03R 30A (30V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics


    Original     		PDF YG838C03R O-220F 500ns,

    30A high speed diode

    Abstract: No abstract text available
    Text: YG838C03R 30A (30V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics


    Original     		PDF YG838C03R O-220F 500ns, YG838C04R 30A high speed diode

    YG838C04R

    Abstract: No abstract text available
    Text: YG838C04R 30A (40V / 30A ) Outline drawings, mm SCHOTTKY BARRIER DIODE TO-220F Type name Polarity mark Features Low VF Super high speed switching Connection diagram High reliability by planer design Applications High speed power switching 1 2 3 Maximum ratings and characteristics


    Original     		PDF YG838C04R O-220F 500ns, YG838C04R

    Untitled

    Abstract: No abstract text available
    Text: ISL9R3060G2_F085 30A, 600V Stealth Rectifier Features 30A, 600V Stealth Rectifier • High Speed Switching trr=31ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is Stealth diode optimized for low loss performance in high frequency hard switched applications.


    Original     		PDF ISL9R3060G2

    Untitled

    Abstract: No abstract text available
    Text: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is


    Original     		PDF RURG3060

    Untitled

    Abstract: No abstract text available
    Text: ISL9R3060G2_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=102ns(Typ. @ IF=30A ) The ISL9R3060G2_F085 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications.The Stealth™ family exhibits low reverse recovery current


    Original     		PDF ISL9R3060G2 102ns AEC-Q101

    Untitled

    Abstract: No abstract text available
    Text: RURG3060CC_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an dual ultrafast diode with soft recovery characteristics (trr<80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.


    Original     		PDF RURG3060CC RURG3060

    Untitled

    Abstract: No abstract text available
    Text: RHRG3060_F085 30A, 600V Hyperfast Rectifier Features Max Ratings 600V, 30A • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) The RHRG3060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride


    Original     		PDF RHRG3060

    Untitled

    Abstract: No abstract text available
    Text: RURG3060_F085 30A, 600V Ultrafast Rectifier Features 30A, 600V Ultrafast Rectifier • High Speed Switching trr=60ns(Typ. @ IF=30A ) The RURG3060_F085 is an ultrafast diode with soft recovery characteristics (trr< 80ns). It has low forward voltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.


    Original     		PDF RURG3060

    F30S60S

    Abstract: No abstract text available
    Text: FFH30S60S tm Stealth 2 Rectifier Features 30A, 600V Stealth 2 Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFH30S60S is stealth2 rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial


    Original     		PDF FFH30S60S FFH30S60S F30S60S

    Untitled

    Abstract: No abstract text available
    Text: FGA30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V


    Original     		PDF FGA30N120FTD FGA30N120FTD

    Untitled

    Abstract: No abstract text available
    Text: FGH30N120FTD tm 1200V, 30A Trench IGBT Features General Description • Field stop trench technology • High speed switching • Low saturation voltage: VCE sat = 1.6V @ IC = 30A • High input impedance Using advanced field stop trench technology, Fairchild’s 1200V


    Original     		PDF FGH30N120FTD FGH30N120FTD

    Schottky 30A 40v

    Abstract: No abstract text available
    Text: http://www.fujisemi.com MS838C04 40V/30A FUJI Diode Schottky Barrier Diode Features • Low VF • Super high speed switching • High reliability by planer design Outline Drawings [mm] Connection diagram TFP 838C04 838C04 Applications • High speed power switching


    Original     		PDF MS838C04 0V/30A) 838C04 Schottky 30A 40v

    F30S60S

    Abstract: No abstract text available
    Text: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 40ns @ IF = 30A • High Reverse Voltage and High Reliability The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP30S60S FFP30S60S F30S60S

    F30S60S

    Abstract: FFP30S60S FFP30S60STU F30S60
    Text: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP30S60S FFP30S60S F30S60S FFP30S60STU F30S60

    Untitled

    Abstract: No abstract text available
    Text: TS808C06 30A (60V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching


    Original     		PDF TS808C06 500ns,

    F30S60S

    Abstract: No abstract text available
    Text: STEALTH II Rectifier FFP30S60S tm Features 30A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 40ns @ IF = 30A The FFP30S60S is STEALTHTM II rectifier with soft recovery charac-teristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF FFP30S60S FFP30S60S F30S60S

    Untitled

    Abstract: No abstract text available
    Text: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching


    Original     		PDF TS808C04 500ns,

    Untitled

    Abstract: No abstract text available
    Text: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching


    Original     		PDF TS808C04 500ns, 25ature

    Untitled

    Abstract: No abstract text available
    Text: TS808C04 30A (40V / 30A ) 0.9 ±0.3 Outline drawings, mm 4.5 ±0.2 1.32 3.0 ±0.3 1.5 Max 10 +0.5 9.3 ±0.5 SCHOTTKY BARRIER DIODE +0.2 1.2 ±0.2 0.8 —0.1 0.4 +0.2 2.7 5.08 1. Gate 2, 4. Drain 3. Source Features JEDEC Low VF EIAJ Super high speed switching


    Original     		PDF TS808C04 500ns,

    PA886C02

    Abstract: COLLMER SEMICONDUCTOR
    Text: PA886C02 30A • Outline Drawing SCHOTTKY BARRIER DIODE ■ Features • Lo w V f • Super high speed switching • High reliability by planer design ■ Applications • High speed power switching ■ Maximum Ratings & Characteristics • Absolute Maximum Ratings


    OCR Scan     		PDF PA886C02 Q003CJ72 PA886C02 COLLMER SEMICONDUCTOR

    30A high speed diode

    Abstract: TS808C06
    Text: TS808C06 30A SCHOTTKY BARRIER DIODE • Outline Drawing H Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching ■ Maximum Ratings & Characteristics


    OCR Scan     		PDF TS808C06 500ns, 30A high speed diode TS808C06

    30A high speed diode

    Abstract: TS808C04
    Text: _ TS808C04 30A SCHOTTKY BARRIER DIODE • Outline Drawing I Features • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design I Applications • High speed power switching ■ Maximum Ratings & Characteristics


    OCR Scan     		PDF TS808C04 500ns, 30A high speed diode TS808C04

    ESAD83M-004

    Abstract: No abstract text available
    Text: ESAD83M-004 30A Outline Drawing SCHOTTKY BARRIER DIODE • Features • Insulated package by fully molding • Lo w V f • Super high speed switching • High reliability by planer design I Applications High speed power switching ■ Maximum Ratings & Characteristics


    OCR Scan     		PDF ESAD83M-004 500ns, ESAD83M-004