W30NM60
Abstract: ZVS phase-shift converters STW30NM60D W30NM60D mosfet 600V 30A JESD97 25C312
Text: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge
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STW30NM60D
O-247
W30NM60
ZVS phase-shift converters
STW30NM60D
W30NM60D
mosfet 600V 30A
JESD97
25C312
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STW30NM60D
Abstract: JESD97 ZVS phase-shift converters mosfet 600V 100A ST 15A16s W30NM60 W30NM60D 25C312
Text: STW30NM60D N-channel 600V - 0.125Ω - 30A - TO-247 Fast diode MDmesh Power MOSFET General features Type VDSS RDS on ID STW30NM60D 600V < 0.145Ω 30A • High dv/dt and avalanche capabilities ■ 100% avalanche rated ■ Low input capacitance and gate charge
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STW30NM60D
O-247
STW30NM60D
JESD97
ZVS phase-shift converters
mosfet 600V 100A ST
15A16s
W30NM60
W30NM60D
25C312
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Untitled
Abstract: No abstract text available
Text: STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■
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STP36NF06L
STB36NF06L
O-220
O-220
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P36NF06L
Abstract: p36nf06 STP36NF06L STB36NF06L B36NF06 JESD97 13-Mar-2006
Text: STP36NF06L STB36NF06L N-channel 60V - 0.032Ω - 30A - TO-220 - D2PAK STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06L 60V < 0.04Ω 30A STB36NF06L 60V < 0.04Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■
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STP36NF06L
STB36NF06L
O-220
O-220
P36NF06L
p36nf06
STP36NF06L
STB36NF06L
B36NF06
JESD97
13-Mar-2006
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30NF20
Abstract: STP30NF20 STW30NF20 JESD97
Text: STP30NF20 STW30NF20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30NF20 200V 0.075Ω 30A 125W STW30NF20 200V 0.075Ω 30A 125W Gate charge minimized ■ 100% avalanche tested
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STP30NF20
STW30NF20
O-220/TO-247
30NF20
STP30NF20
STW30NF20
JESD97
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STW30N20
Abstract: W30N20
Text: STP30N20 STW30N20 N-channel 200V - 0.065Ω - 30A - TO-220/TO-247 Low gate charge STripFET Power MOSFET General features • Type VDSS RDS on ID PTOT STP30N20 200V 0.075Ω 30A 125W STW30N20 200V 0.075Ω 30A 125W Gate charge minimized 3 3 2 1 1 ■ 100% avalanche tested
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STP30N20
STW30N20
O-220/TO-247
O-247
O-220
STW30N20
W30N20
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STB30N10
Abstract: airbag
Text: STB30N10 N-CHANNEL 100V - 0.06 Ω - 30A D2PAK POWER MOSFET TRANSISTOR PRELIMINARY DATA TYPE STB30N10 VDSS RDS on ID 100 V <0.07 Ω 30 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE
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STB30N10
100oC
O-263)
O-263
STB30N10
airbag
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AVALANCHE TRANSISTOR
Abstract: transistor irf250 5 pin relay 12v 30a IRF250 irf250 dc motor MOSFET IRF250 irf250 datasheet TB334 160V 30A TRANSISTOR
Text: IRF250 Data Sheet March 1999 30A, 200V, 0.085 Ohm, N-Channel Power MOSFET • 30A, 200V Ordering Information IRF250 TO-204AE • rDS ON = 0.085Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds
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IRF250
O-204AE
TB334
TA09295.
AVALANCHE TRANSISTOR
transistor irf250
5 pin relay 12v 30a
IRF250
irf250 dc motor
MOSFET IRF250
irf250 datasheet
TB334
160V 30A TRANSISTOR
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STW30NM60D
Abstract: 15a diode W30NM60 ZVS phase-shift converters W30NM60D
Text: STW30NM60D N-CHANNEL 600V - 0.125Ω - 30A TO-247 Fast Diode MDmesh MOSFET Table 1: General Features TYPE STW30NM60D • ■ ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 600V < 0.145Ω 30A TYPICAL RDS(on) = 0.125Ω HIGH dv/dt AND AVALANCHE CAPABILITIES
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STW30NM60D
O-247
O-247
STW30NM60D
15a diode
W30NM60
ZVS phase-shift converters
W30NM60D
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P60NF06
Abstract: P60NF p60nf0 P60NF*06 P60*nf06 STP60NF06FP STP60 *p60nf06 p60n STripFET
Text: STP60NF06FP N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06FP 60V <0.016Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 1 2 TO-220FP
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STP60NF06FP
O-220FP
P60NF06
P60NF
p60nf0
P60NF*06
P60*nf06
STP60NF06FP
STP60
*p60nf06
p60n
STripFET
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DD 127 D TRANSISTOR
Abstract: STB30N10 transistor DD 127 D
Text: STB30N10 N - CHANNEL 100V - 0.06Ω - 30A - D2PAK POWER MOS TRANSISTOR TYPE V DSS R DS on ID STB30N10 100 V < 0.07 Ω 30 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STB30N10
100oC
O-263)
O-263
DD 127 D TRANSISTOR
STB30N10
transistor DD 127 D
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STP30NM30N
Abstract: No abstract text available
Text: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance
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STP30NM30N
O-220
O-220
STP30NM30N
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Untitled
Abstract: No abstract text available
Text: STP30NM30N N-channel 300V - 0.078Ω - 30A - TO-220 Ultra low gate charge MDmesh II Power MOSFET Features Type VDSS RDS on ID STP30NM30N 300V <0.090Ω 30A • Worldwide lowest gate charge ■ High dv/dt avalanche capabilities ■ Low input capacitance
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STP30NM30N
O-220
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p60nf06
Abstract: No abstract text available
Text: STP60NF06FP N-channel 60V - 0.014Ω - 30A TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06FP 60V <0.016Ω 30A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 1 2 TO-220FP
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STP60NF06FP
O-220FP
p60nf06
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STB30N10
Abstract: No abstract text available
Text: STB30N10 N-CHANNEL 100V - 0.06 Ω - 30A D2PAK POWER MOSFET TRANSISTOR PRELIMINARY DATA TYPE STB30N10 • ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.07 Ω 30 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STB30N10
100oC
O-263)
O-263
STB30N10
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Untitled
Abstract: No abstract text available
Text: TSM55N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 25V Pin assignment: 1. Gate 2. Drain 3. Source ID = 55A RDS on , Vgs @ 10V, Ids @ 30A = 6mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 9mΩ Features Advanced trench process technology Fully Characterized Avalanche Voltage and Current
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TSM55N03
TSM55N03CP
O-252
300uS,
O-252
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STB30N10
Abstract: No abstract text available
Text: STB30N10 N-CHANNEL 100V - 0.06 Ω - 30A D2PAK POWER MOSFET TRANSISTOR PRELIMINARY DATA TYPE STB30N10 • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V <0.07 Ω 30 A TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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STB30N10
100oC
O-263)
O-263
STB30N10
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STW26NM50FD
Abstract: STW26NM50F 500v ZENER DIODE ZVS phase-shift converters schematic diagram welding device
Text: STW26NM50FD N-CHANNEL 500V - 0.10Ω - 30A TO-247 FDmesh Power MOSFET with FAST DIODE TARGET DATA TYPE STW26NM50FD • ■ ■ ■ ■ VDSS RDS(on) ID 500V <0.12Ω 30 A TYPICAL RDS(on) = 0.10Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED
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STW26NM50FD
O-247
STW26NM50FD
STW26NM50F
500v ZENER DIODE
ZVS phase-shift converters
schematic diagram welding device
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Untitled
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 N channel BUZ 30A Enhancement mode Avalanche-rated Pin1 Pin 2 Pin 3 D Type YDS ID BUZ 30A 200V 21 A Package ^DS(on) 0.130 TO-220 AB Maximum Ratings Parameter Symbol Continuous drain current
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O-220
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F1S30P06
Abstract: RFP30P06 RF1S30P06 RF1S30P06SM RF1S30P06SM9A RFG30P06 299E-3
Text: RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 60V rDS ON = 0.065Ω Temperature Compensating PSPICE Model
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RFG30P06,
RFP30P06,
RF1S30P06,
RF1S30P06SM
O-247
175oC
F1S30P06
RFP30P06
RF1S30P06
RF1S30P06SM
RF1S30P06SM9A
RFG30P06
299E-3
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f1s30p05
Abstract: RS223 RFP30P05 TA09834 RF1S30P05 RF1S30P05SM RFG30P05 rfp30p05 harris
Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM S E M I C O N D U C T O R 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features • • • • • • Packages JEDEC STYLE TO-247 30A, 50V rDS ON = 0.065Ω Temperature Compensating PSPICE Model
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RFG30P05,
RFP30P05,
RF1S30P05,
RF1S30P05SM
O-247
175oC
f1s30p05
RS223
RFP30P05
TA09834
RF1S30P05
RF1S30P05SM
RFG30P05
rfp30p05 harris
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F1S30P05
Abstract: No abstract text available
Text: RFG30P05, RFP30P05, RF1S30P05, RF1S30P05SM fB l H A R R IS u u semiconductor 30A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D EC STYLE TO -247 • 30A .50V SOURCE = 0.0651J • Temperature Compensating PSPICE Model
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RFG30P05,
RFP30P05,
RF1S30P05,
RF1S30P05SM
0651J
RF1S30P05SM
F1S30P05
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Untitled
Abstract: No abstract text available
Text: BUZ 30A Infineon Iftchnologi«* SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type VDS b ^DS on Package Ordering Code BUZ 30A 200 V 21 A 0.13 £i TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1303-A3
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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Untitled
Abstract: No abstract text available
Text: ¿7/ STB30N10 N - CHANNEL 100V - 0.06Î2 - 30A - D2PAK POWER MOS TRANSISTOR TYPE V STB30N10 d ss 100 V R d S o ii < 0 .0 7 a Id 30 A TYPICAL R D S (on) = 0.06 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE
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STB30N10
O-263)
O-263
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