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    30A 44 ZENER DIODE Search Results

    30A 44 ZENER DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
    CUZ16V Toshiba Electronic Devices & Storage Corporation Zener Diode, 16 V, USC Visit Toshiba Electronic Devices & Storage Corporation

    30A 44 ZENER DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    gate to drain clamp

    Abstract: 30A 44 zener diode gate-drain zener AOT500 8017M
    Text: AOT500 N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		PDF AOT500 AOT500 50E-06 00E-06 00E-05 300mW Fig16: gate to drain clamp 30A 44 zener diode gate-drain zener 8017M

    250HMA

    Abstract: No abstract text available
    Text: AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		PDF AOT500L AOT500 AOT500 250HMA

    AOT500

    Abstract: gate to drain clamp
    Text: AOT500 N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		PDF AOT500 AOT500 gate to drain clamp

    AOT500

    Abstract: gate to drain clamp
    Text: AOT500L N-Channel Enhancement Mode Field Effect Transistor General Description Features AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		PDF AOT500L AOT500 AOT500 gate to drain clamp

    33a zener

    Abstract: No abstract text available
    Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF


    Original     		PDF 500mW 2002/95/EC MIL-STD-750, 33a zener

    zener 4c3

    Abstract: zener gdz zener gdz marking
    Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)


    Original     		PDF GDZ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 2012-REV RB500V-40 zener 4c3 zener gdz zener gdz marking

    zener 6c2

    Abstract: zener 4c3 zener 5c1 marking code 6C8 zener 9A1 zener 9c1 zener 5B6 DIODES 33D 6c2 zener 4C3 zener
    Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES VOLTAGE 2.0 to 56 Volts POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)


    Original     		PDF GDZ56 500mW 2002/95/EC DO-34 MIL-STD-750, 2012-REV RB500V-40 zener 6c2 zener 4c3 zener 5c1 marking code 6C8 zener 9A1 zener 9c1 zener 5B6 DIODES 33D 6c2 zener 4C3 zener

    GLZ56

    Abstract: zener diodes 5.1a 33b 56
    Text: GLZ2.0~GLZ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA. • In compliance with EU RoHS 2002/95/EC directives


    Original     		PDF GLZ56 MINI-MELF/LL-34 500mW 2002/95/EC MIL-STD-750, GLZ56 zener diodes 5.1a 33b 56

    zener 4c3

    Abstract: zener 5c1 ZENER CODE 51b zener 2a7 4C7 marking code zener 10D zener 4B7 20D22A DIODES 33D marking code 6C8
    Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF


    Original     		PDF 500mW 2002/95/EC MIL-STD-750, 2011-REV RB500V-40 zener 4c3 zener 5c1 ZENER CODE 51b zener 2a7 4C7 marking code zener 10D zener 4B7 20D22A DIODES 33D marking code 6C8

    marking code 6C8

    Abstract: zener 5A1 zener 10D zener 5c1 zener 9c1 DIODES 33D Marking 4c7 4C7 marking code zener 4c3
    Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF


    Original     		PDF 500mW 2002/95/EC MIL-STD-750, 2011-REV marking code 6C8 zener 5A1 zener 10D zener 5c1 zener 9c1 DIODES 33D Marking 4c7 4C7 marking code zener 4c3

    Untitled

    Abstract: No abstract text available
    Text: Z2SMB6.8 . Z2SMB200 2 W Z2SMB6.8 . Z2SMB200 (2 W) Surface Mount Silicon-Zener Diodes Si-Zener-Dioden für die Oberflächenmontage Version 2013-05-23 Maximum power dissipation Maximale Verlustleistung ± 0.5 2.2± 0.2 2.1± 0.1 5.4 0.15 Type Typ Nominal Z-voltage


    Original     		PDF Z2SMB200 DO-214AA UL94V-0

    Untitled

    Abstract: No abstract text available
    Text: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		PDF AOT502 AOT502

    AOT502

    Abstract: gate-drain zener 50E05 102-AX
    Text: AOT502 Clamped N-Channel MOSFET General Description Product Summary AOT502 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.


    Original     		PDF AOT502 AOT502 gate-drain zener 50E05 102-AX

    Untitled

    Abstract: No abstract text available
    Text: Z1SMA1 . Z1SMA100 1 W Z1SMA1 . Z1SMA100 (1 W) Surface mount Silicon-Zener Diodes (non-planar technology) Flächendiffundierte Si-Zener-Dioden für die Oberflächenmontage Version 2014-07-11 Maximum power dissipation Maximale Verlustleistung ± 0.2 2.2 ± 0.2


    Original     		PDF Z1SMA100 DO-214AC UL94V-0

    6b2 zener

    Abstract: Marking 4c7 Tube 5A6 DIODES 33D
    Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: Molded Glass MINI-MELF


    Original     		PDF 500mW 2002/95/EC MIL-STD-750, 2011-REV 6b2 zener Marking 4c7 Tube 5A6 DIODES 33D

    Untitled

    Abstract: No abstract text available
    Text: GLZ2.0 SERIES SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation 0.063 1.6 • Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA • Case: Molded Glass MINI-MELF


    Original     		PDF 500mW 2011/65/EU MIL-STD-750, 2011-REV

    zener gdz marking

    Abstract: No abstract text available
    Text: GDZ2.0~GDZ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives MECHANICAL DATA


    Original     		PDF GDZ56 500mW 2011/65/EU DO-34 MIL-STD-750, DO-34 2014-REV zener gdz marking

    SMZ-75

    Abstract: DO-213AB SMZ10 SMZ11 SMZ12 SMZ13 SMZ15 SMZ16 SMZ200
    Text: SMZ1 . SMZ200 2 W SMZ1 . SMZ200 (2 W) Surface Mount Silicon-Zener Diodes (non-planar technology) Flächendiffundierte Si-Zener-Dioden für die Oberflächenmontage Version 2011-10-17 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage


    Original     		PDF SMZ200 DO-213AB UL94V-0 SMZ-75 DO-213AB SMZ10 SMZ11 SMZ12 SMZ13 SMZ15 SMZ16 SMZ200

    SMZ5.6

    Abstract: No abstract text available
    Text: SMZ1 . SMZ200 2 W SMZ1 . SMZ200 (2 W) Surface Mount Silicon-Zener Diodes (non-planar technology) Flächendiffundierte Si-Zener-Dioden für die Oberflächenmontage Version 2012-04-02 Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage


    Original     		PDF SMZ200 DO-213AB UL94V-0 SMZ5.6

    Untitled

    Abstract: No abstract text available
    Text: ZPY1 . ZPY200 1.3 W ZPY1 . ZPY200 (1.3 W) Silicon-Power-Zener Diodes (non-planar technology) Silizium-Leistungs-Zener-Dioden (flächendiffundierte Dioden) Version 2014-06-30 Maximum power dissipation Maximale Verlustleistung ±0.1 5.1 -0.1 Type +0.5


    Original     		PDF ZPY200 DO-41 UL94V-0

    Untitled

    Abstract: No abstract text available
    Text: ZPY1 . ZPY200 1.3 W ZPY1 . ZPY200 (1.3 W) Silicon-Power-Zener Diodes (non-planar technology) Silizium-Leistungs-Zener-Dioden (flächendiffundierte Dioden) Version 2013-01-29 Maximum power dissipation Maximale Verlustleistung ±0.1 5.1 -0.1 Type +0.5


    Original     		PDF ZPY200 DO-41 UL94V-0

    STE70NM50

    Abstract: No abstract text available
    Text: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STE70NM50 STE70NM50

    zener 400v

    Abstract: No abstract text available
    Text: STE70NM50 N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE STE70NM50 n n n n n n n VDSS RDS on ID 500V < 0.05Ω 70 A TYPICAL RDS(on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD CAPABILITY LOW INPUT CAPACITANCE AND GATE


    Original     		PDF STE70NM50 zener 400v

    BAI59

    Abstract: B40 35-10 IN5345B Diodes In4007 HVR062 IN4007F RF2007 B40C3700-2200 b40c2000 rf2001
    Text: FAGOR ^ NUMERICAL INDEX TRANSIENT VOLTAGE SUPPRESSOR DIODES RECTIFIER DIODES Plastic Case IN4007F. 1N4001F. IN4007 . 1N4001 . P513 . BY 133 . 1N5399 . 1N5391 . RF2007 . RF2001 . BY255 .


    OCR Scan     		PDF IN4007F. 1N4001F. IN4007 1N4001 1N5399 1N5391 RF2007 RF2001 BY255 BY251 BAI59 B40 35-10 IN5345B Diodes In4007 HVR062 IN4007F RF2007 B40C3700-2200 b40c2000 rf2001