30N60C Search Results

30N60C Price and Stock

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IXYS Corporation IXGH30N60C3D1 IGBT 600V 60A 220W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH30N60C3D1	Tube	1,391		1	1 $6.7 10 $6.7 100 $5.35267 1000 $4.22578 10000 $3.56375	Buy Now
Mouser Electronics	IXGH30N60C3D1		383			1 $6.15 10 $5.7 100 $4.97 1000 $4.23 10000 $3.57	Buy Now
TTI	IXGH30N60C3D1	Tube	60		30	1 - 10 - 100 $4.92 1000 $4.92 10000 $4.92	Buy Now
Infineon Technologies AG AIKW30N60CTXKSA1 IGBT TRENCH FS 600V 60A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AIKW30N60CTXKSA1	Tube	254		1	1 $6.57 10 $4.874 100 $6.57 1000 $3.62325 10000 $3.39873	Buy Now
Avnet Americas	AIKW30N60CTXKSA1	Tube		20 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	AIKW30N60CTXKSA1		286			1 $6.59 10 $5.71 100 $4.64 1000 $3.47 10000 $3.3	Buy Now
Newark	AIKW30N60CTXKSA1	Bulk	337		1	1 $7.44 10 $6.53 100 $5.81 1000 $4.2 10000 $4.2	Buy Now
TME	AIKW30N60CTXKSA1				1	1 $6.39 10 $5.67 100 $4.89 1000 $4.73 10000 $4.73	Get Quote

EBV Elektronik	AIKW30N60CTXKSA1			27 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXXH30N60C3D1 IGBT 600V 60A 270W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXXH30N60C3D1	Tube	166		1	1 $7.46 10 $7.46 100 $5.95167 1000 $4.69863 10000 $3.9625	Buy Now
Mouser Electronics	IXXH30N60C3D1		167			1 $7.04 10 $6.87 100 $5.87 1000 $4.55 10000 $3.96	Buy Now
TTI	IXXH30N60C3D1	Tube			300	1 - 10 - 100 - 1000 $4.09 10000 $4.09	Buy Now
TME	IXXH30N60C3D1				1	1 $7.06 10 $7.06 100 $5.97 1000 $4.57 10000 $4.24	Get Quote
IXYS Corporation IXXH30N60C3 DISC IGBT XPT-GENX3 TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXXH30N60C3	Tube			300	1 - 10 - 100 - 1000 $3.4984 10000 $3.4984	Buy Now
Mouser Electronics	IXXH30N60C3					1 - 10 - 100 - 1000 $3.5 10000 $3.5	Get Quote
TTI	IXXH30N60C3	Tube			50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGT30N60C2 IGBT PT 600V 70A TO268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGT30N60C2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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30N60C Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
30N60C3		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
30N60C3D		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

30N60C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
30n60b Abstract: 30N60 30N60C ic 931 Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	PDF	30N60B 30N60C O-268 O-247 30n60b 30N60 30N60C ic 931
Untitled Abstract: No abstract text available Text: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D ﬂ D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	PDF	30N60C5 O-247 20090209d
30n60c Abstract: No abstract text available Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW	Original	PDF	30N60B 30N60C O-247 O-268
Untitled Abstract: No abstract text available Text: VCES High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	PDF	30N60B 30N60C O-268
30N60B Abstract: 30N60C Text: High Speed IGBT VCES Short Circuit SOA Capability IXSH/IXST 30N60B IXSH/IXST 30N60C ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	30N60B 30N60C O-247 O-268 30N60C
DSA003710 Abstract: No abstract text available Text: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS	Original	PDF	30N60C5 O-247 20070625a DSA003710
MOSFET IXYS TO-220 Abstract: No abstract text available Text: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP)	Original	PDF	30N60C5 O-247 O-220 MOSFET IXYS TO-220
Untitled Abstract: No abstract text available Text: IXKH 30N60C5 COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	PDF	30N60C5 O-247 20080310b
UPS SIEMENS Abstract: 30N60C siemens servo motor siemens igbt Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C (limited by leads)	Original	PDF	30N60C2 IC110 O-220 UPS SIEMENS 30N60C siemens servo motor siemens igbt
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	PDF	30N60C2D1 IC110 O-247 O-268
Untitled Abstract: No abstract text available Text: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings	Original	PDF	30N60C5 O-247 20080523c
30N60C2 Abstract: 728B1 123B1 Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	PDF	30N60C2 30N60C2 IC110 O-268 O-247 065B1 728B1 123B1
30N60C2D1 Abstract: v922 Text: Advance Technical Data HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES	Original	PDF	30N60C2D1 IC110 O-247 O-268 065B1 728B1 123B1 v922
Untitled Abstract: No abstract text available Text: IXKP 30N60C5M ID25 = 10 A VDSS = 600 V RDS on max = 0.125 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	PDF	30N60C5M O-220 20080310a

Untitled Abstract: No abstract text available Text: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD D G G D S S D(TAB) Features MOSFET Conditions VDSS	Original	PDF	30N60C5 O-247
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT IXGP 30N60C2 C2- Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C limited by leads 70	Original	PDF	30N60C2 IC110 O-220
Untitled Abstract: No abstract text available Text: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS	Original	PDF	30N60C5 O-247 20070625a
Untitled Abstract: No abstract text available Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	30N60C2 IC110 O-268 O-247
ixkp30n60c5 Abstract: No abstract text available Text: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information ID25 = 30 A = 600 V VDSS RDS on max = 0.125 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD (IXKH) G G D S D (TAB) S TO-220 AB (IXKP)	Original	PDF	30N60C5 30N60C5 O-247 O-220 Application50 ixkp30n60c5
30N60C2 Abstract: No abstract text available Text: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	30N60C2 IC110 O-268 O-247 30N60C2
30N60C2D1 Abstract: No abstract text available Text: HiPerFASTTM IGBT with Diode C2-Class High Speed IGBTs Symbol Test Conditions IXGH 30N60C2D1 VCES IXGT 30N60C2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM	Original	PDF	30N60C2D1 IC110 O-247 O-268
30n60b Abstract: B2045 Text: □ IXYS v CES High Speed IGBT t, 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/IXST 30N60B IXSH/IXST 30N60C ^CES Short Circuit SOA Capability Preliminary Data Sheet Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i	OCR Scan	PDF	30N60B 30N60C 30n60b B2045
30N60C Abstract: No abstract text available Text: n ix Y S ADVANCED TECHNICAL INFORMATION VCES High Speed IGBT tn 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/1XST 30N60B IXSH/1XST 30N60C ^CES Short Circuit SOA Capability • Symbol Test Conditions v CES T, =25°Cto150°C 600 V VC0R ^ 600 V v GES Continuous	OCR Scan	PDF	30N60B 30N60C Cto150 O-247AD O-268
B1116 Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1 Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40	OCR Scan	PDF	O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1

30N60C Search Results

30N60C Price and Stock

IXYS Corporation IXGH30N60C3D1

Infineon Technologies AG AIKW30N60CTXKSA1

IXYS Corporation IXXH30N60C3D1

IXYS Corporation IXXH30N60C3

IXYS Corporation IXGT30N60C2

30N60C Datasheets (2)

30N60C Datasheets Context Search

30n60b

Untitled

30n60c

Untitled

30N60B

DSA003710

MOSFET IXYS TO-220

Untitled

UPS SIEMENS

Untitled

Untitled

30N60C2

30N60C2D1

Untitled

Untitled

Untitled

Untitled

Untitled

ixkp30n60c5

30N60C2

30N60C2D1

30n60b

30N60C

B1116