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    306 MARKING CODE TRANSISTOR Search Results

    306 MARKING CODE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    306 MARKING CODE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q68000-A8370

    Abstract: CGY MW
    Text: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215


    Original     		PDF 1900C Q62702-L0132 Q62702-L0131 Q62702-F1215 Q62702-F1391 Q62705-K0603 Q62705-K0604 Q62702-G0116 Q62703-F97 Q68000-A8370 CGY MW

    bhr sot-89

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ 2SB1386 THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process TRANSISTOR PNP design, excellent power dissipation offers


    Original     		PDF OT-89 OD-123+ 060TYP FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH bhr sot-89

    TRANSISTOR ss101

    Abstract: SS101 TO92 SS101 BR 101 Transistor Q62702-S493 Q62702-S636 Q62702-S484 E6288 transistor bss
    Text: SIPMOS Small-Signal Transistor BSS 101 ● VDS 240 V ● ID 0.13 A ● RDS on 16 Ω ● VGS(th) 0.8 … 2.0 V ● N channel ● Enhancement mode ● Logic level 2 3 1 1 Type Ordering Code Tape and Reel Information Pin Configuration Marking BSS 101 Q62702-S484 bulk


    Original     		PDF Q62702-S484 Q62702-S493 E6288: SS101 Q62702-S636 E6325: TRANSISTOR ss101 SS101 TO92 SS101 BR 101 Transistor E6288 transistor bss

    d436

    Abstract: d436 transistor transistor d436
    Text: AOD436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD436 uses advanced trench technology to provide excellent RDS ON , low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion.


    Original     		PDF AOD436 AOD436 AOD436L O-252 PD-00148 d436 d436 transistor transistor d436

    NSBC144WDP6

    Abstract: NSBC123TDP6
    Text: NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBC114EDP6T5G NSBC114EDP6/D NSBC144WDP6 NSBC123TDP6

    NSBA123TDP6

    Abstract: No abstract text available
    Text: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBA114EDP6T5G NSBA114EDP6/D NSBA123TDP6

    NSBC124EDP6

    Abstract: NSBC144WDP6 NSBC123TDP6
    Text: NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBC114EDP6T5G OT-963 NSBC114EDP6/D NSBC124EDP6 NSBC144WDP6 NSBC123TDP6

    NSBA124EDP6

    Abstract: NSBA123TDP6
    Text: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBA114EDP6T5G OT-963 NSBA114EDP6/D NSBA124EDP6 NSBA123TDP6

    339 marking code transistor manual

    Abstract: NSBA123TDP6
    Text: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBA114EDP6T5G OT-963 NSBA114EDP6/D 339 marking code transistor manual NSBA123TDP6

    NSBC114EDP6T5G

    Abstract: NSBC114YDP6T5G NSBC123TDP6T5G NSBC124EDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC144EDP6T5G 306 marking code transistor SOT-963
    Text: NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBC114EDP6T5G OT-963 NSBC114EDP6/D NSBC114YDP6T5G NSBC123TDP6T5G NSBC124EDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC144EDP6T5G 306 marking code transistor SOT-963

    NSBC114EDP6T5G

    Abstract: NSBC114YDP6T5G NSBC123TDP6T5G NSBC124EDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC144EDP6T5G 527AD NSBC124EDP6 NSBC144WDP6
    Text: NSBC114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBC114EDP6T5G OT-963 NSBC114EDP6/D NSBC114YDP6T5G NSBC123TDP6T5G NSBC124EDP6T5G NSBC143EDP6T5G NSBC143ZDP6T5G NSBC144EDP6T5G 527AD NSBC124EDP6 NSBC144WDP6

    NSBA114EDP6T5G

    Abstract: NSBA114YDP6T5G NSBA123TDP6T5G NSBA124EDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA144EDP6T5G 527AD
    Text: NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors BRT PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor


    Original     		PDF NSBA114EDP6T5G OT-963 NSBA114EDP6/D NSBA114YDP6T5G NSBA123TDP6T5G NSBA124EDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA144EDP6T5G 527AD

    NSBC123TPDP6T5G

    Abstract: NSBC144EPDP6T5G NSBC114EPDP6T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC124EPDP6T5G NSBC143EPDP6T5G 306 marking code transistor NSBC144WPDP6
    Text: NSBC114EPDP6T5G Series Preferred Devices Dual Digital Transistors BRT Complementary Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSBC114EPDP6T5G NSBC114EPDP6T5G OT-963 NSBC114EPDP6/D NSBC123TPDP6T5G NSBC144EPDP6T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC124EPDP6T5G NSBC143EPDP6T5G 306 marking code transistor NSBC144WPDP6

    NSBC144WPDP6

    Abstract: No abstract text available
    Text: NSBC114EPDP6T5G Series Preferred Devices Dual Digital Transistors BRT Complementary Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base


    Original     		PDF NSBC114EPDP6T5G NSBC114EPDP6T5G NSBC114EPDP6/D NSBC144WPDP6

    sot963

    Abstract: No abstract text available
    Text: NSBA115TDP6 Dual PNP Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF NSBA115TDP6 DTA115TD/D sot963

    sot963

    Abstract: NSBC123TDP6
    Text: NSBC123TDP6 Dual NPN Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF NSBC123TDP6 DTC123TD/D sot963

    sot963

    Abstract: NSBA123TDP6
    Text: NSBA123TDP6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW PNP Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF NSBA123TDP6 DTA123TD/D sot963

    sot963

    Abstract: No abstract text available
    Text: NSBC115TDP6 Dual NPN Bias Resistor Transistors R1 = 100 kW, R2 = 8 kW NPN Transistors with Monolithic Bias Resistor Network http://onsemi.com This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor


    Original     		PDF NSBC115TDP6 DTC115TD/D sot963

    TRANSISTOR 6CT

    Abstract: 306 marking code transistor 6ct transistor BC818-40W 6ht6
    Text: Philips Semiconductors Product specification NPN general purpose transistors BC817W; BC818W FEATURES PINNING • High current max. 500 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector General purpose switching and amplification.


    OCR Scan     		PDF BC817W; BC818W OT323 BC807W BC808W. BC817W BC817-16W BC817-25W BC817-40W BC818W TRANSISTOR 6CT 306 marking code transistor 6ct transistor BC818-40W 6ht6

    P-SOT-143

    Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking
    Text: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1


    OCR Scan     		PDF CFY30 1900C Q62702-L0132 Q62702-L0131 Q62702-F1215 Q62702-F1391 Q62705-K0603 Q62705-K0604 Q62702-G0116 P-SOT-143 CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 G69 marking

    2SA1885

    Abstract: transistor 2sa1776
    Text: 2SA1885 2SA1812/ 2SA1727 / 2SA1776 Transistors High-frequency Am plifier Transistor, RF switches — 10V, — 0.1A 2SA1885 0 Features >A bsolute maxim um ratings (T«=25'C ) 1 ) High transition frequency. (Typ. 650M H z) P aram eter Collector-base voltage


    OCR Scan     		PDF 2SA1885 2SA1812/ 2SA1727 2SA1776 2SA1885 transistor 2sa1776

    d 317 transistor

    Abstract: ti 317
    Text: SIEMENS BSP 317 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • ^GS th = -0.8.-2.0 V Type h -0.37 A BSP 317 ^DS -200 V Type BSP 317 Ordering Code Q67000-S94 Package flDS(on) 6 fì Marking SOT-223 Tape and Reel Information


    OCR Scan     		PDF OT-223 Q67000-S94 E6327 OT-223 GPS05560 d 317 transistor ti 317

    BC413

    Abstract: AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c
    Text: SIE D SIEM EN S • A53Sba5 D041S64 4bb « S I E C SIEMENS AKTIENGESELLSCHAF NPN Silicon AF Transistors BC 413 BC 414 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 415, BC 416 PNP


    OCR Scan     		PDF A53Sba5 D041S64 VPTO52I2 Q62702-C375 Q62702-C375-V1 Q62702-C375-V2 Q62702-C376 Q62702-C376-V1 Q62702-C376-V2 35Li05 BC413 AMI siemens BC414C N 413 af BC414 BC413C bc 580 BTB 700 siemens marking 411 414c

    smd diode 319

    Abstract: No abstract text available
    Text: BSP 319 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated •^GS .h = 1-2 - 2 0 V Type Vbs b f f DS(on) Package Marking BSP 319 50 V 3.8 A 0.07 £i SOT-223 BSP 319 Type BSP 319 Ordering Code Q67000-S273


    OCR Scan     		PDF OT-223 Q67000-S273 E6327 S35bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T smd diode 319