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    304 FET TRANSISTOR Search Results

    304 FET TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    304 FET TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BUK7513-75B

    Abstract: BUK7613-75B
    Text: BUK75/7613-75B TrenchMOS standard level FET Rev. 01 — 14 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.


    Original     		BUK75/7613-75B BUK7513-75B O-220AB) BUK7613-75B OT404 PDF

    BUK75

    Abstract: BUK7513-75B
    Text: BUK7513-75B N-channel TrenchMOS standard level FET Rev. 02 — 25 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK7513-75B BUK75 BUK7513-75B PDF

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK7613-75B N-channel TrenchMOS standard level FET Rev. 3 — 27 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK7613-75B PDF

    Untitled

    Abstract: No abstract text available
    Text: BUK7513-75B N-channel TrenchMOS standard level FET Rev. 02 — 25 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK7513-75B PDF

    75b diode

    Abstract: BUK75 BUK7613-75B
    Text: BUK7613-75B N-channel TrenchMOS standard level FET Rev. 2 — 17 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK7613-75B 75b diode BUK75 BUK7613-75B PDF

    Untitled

    Abstract: No abstract text available
    Text: D2 PA K BUK7613-75B N-channel TrenchMOS standard level FET Rev. 3 — 27 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to


    Original     		BUK7613-75B PDF

    FET BFW61

    Abstract: BFW61 v511 304 fet transistor N CHANNEL FET BFW61
    Text: 711Qfl2b D0t7tiflM TS3 M P H I N BFW61 N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in aTO -72 metal envelope w ith the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers.


    OCR Scan     		7110fl2b BFW61 aTO-72 FET BFW61 BFW61 v511 304 fet transistor N CHANNEL FET BFW61 PDF

    PH4530L

    Abstract: No abstract text available
    Text: PH4530L N-channel TrenchMOS logic level FET Rev. 02 — 26 January 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		PH4530L PH4530L PDF

    Untitled

    Abstract: No abstract text available
    Text: Part Number: Integra IGN2735M250 Preliminary TECHNOLOGIES, INC. S-Band Radar Transistor GaN on Silicon Carbide FET  High Power Gain  Excellent thermal stability  Gold Metal IGN2735M250 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for


    Original     		IGN2735M250 IGN2735M250 300us IGN2735M250-REV-PR1-DS-REV-A PDF

    T39 diode

    Abstract: No abstract text available
    Text: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage,


    OCR Scan     		3b7254 IRFZ34/D C65M2 IRFZ34 T39 diode PDF

    304P

    Abstract: V304P FDV304P SQT23
    Text: August 1997 F A IR O H H -P SEMICONDUCTOR t m FDV304P Digital FET, P-Channei General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize


    OCR Scan     		FDV304P 304P V304P SQT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: R A I R C H A ug ust 1997 I I- D SEM IC ONDUCTO R tm FDV304P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize


    OCR Scan     		FDV304P FDV304P OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: July 1997 FAIRCHILD SEM IC ONDUCTO R m FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize


    OCR Scan     		FDC6304P OT-23 FDC6304P 0033414b PDF

    1SS SOT-23

    Abstract: FDV304P
    Text: B A ID C U lL n May 1997 p r e l im in a r y M IC O N D U C T O R tm FDV304P P-Channel, Digital FET General Description Features These P-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize


    OCR Scan     		FDV304P 1SS SOT-23 PDF

    FAIRCHILD SOT-223 MARK 032

    Abstract: No abstract text available
    Text: August 1997 FDV304P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize


    Original     		FDV304P FDV304P FAIRCHILD SOT-223 MARK 032 PDF

    FDV304P

    Abstract: FDV304 SOIC-16
    Text: August 1997 FDV304P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize


    Original     		FDV304P FDV304P FDV304 SOIC-16 PDF

    sot21

    Abstract: No abstract text available
    Text: July 1997 g A J R g H ty O S E M IC O N D U C T O R tm FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize


    OCR Scan     		FDC6304P sot21 PDF

    FDC6304P

    Abstract: SOIC-16
    Text: July 1997 FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize


    Original     		FDC6304P OT-23 FDC6304P SOIC-16 PDF

    1da sot-23

    Abstract: 1da sot LS05-A FDC6304P SOIC-16 O443
    Text: July 1997 FAIRCHILD S E M IC O N D U C T O R w FDC6304P Digital FET, Dual P-Channel General Description F e a tu re s These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize


    OCR Scan     		FDC6304P FDC6304P 0033414h 1da sot-23 1da sot LS05-A SOIC-16 O443 PDF

    bootstrap diode

    Abstract: application note gate driver with bootstrap capacitor IR switch control AN978
    Text: DESIGN TIP DT 98-2 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Bootstrap Component Selection For Control IC’s By Jonathan Adams TOPICS COVERED Operation Of The Bootstrap Circuit Factors Affecting The Bootstrap Supply Calculating The Bootstrap Capacitor Value


    Original     		PDF

    MGM5N45

    Abstract: MGM5N50 MGP5N45 MGP5N50
    Text: MGM5N45 MGM5N50 MGP5N45 MGP5N50 N-CHANNEL ENHANCEMENT MODE SILICON GATE, GAIN ENHANCED MOS FIELD EFFECT TRANSISTOR These GEMFETS are designed for high voltage, high current power controls such as line operated motor controls and converters. o High Input Impedance


    Original     		MGM5N45 MGM5N50 MGP5N45 MGP5N50 O-204AA 1092BSC 546BSC MGM5N45 MGM5N50 MGP5N45 MGP5N50 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    S29JL032H70

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book


    Original     		PG00-00091-3E ACD-10131 CD-10131 DS04-27211-5E MB3789 S29JL032H70 PDF

    UPA65

    Abstract: ed101
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA653TT P チャネル MOS FET スイッチング用 外形図（単位: mm） µPA653TT は，4.0 V 電源系による直接駆動が可能なスイッ チング素子です。


    Original     		PA653TT PA653TT 6205JJ1V0DS G16205JJ1V0DS UPA65 ed101 PDF