BUK7513-75B
Abstract: BUK7613-75B
Text: BUK75/7613-75B TrenchMOS standard level FET Rev. 01 — 14 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.
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BUK75/7613-75B
BUK7513-75B
O-220AB)
BUK7613-75B
OT404
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BUK75
Abstract: BUK7513-75B
Text: BUK7513-75B N-channel TrenchMOS standard level FET Rev. 02 — 25 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7513-75B
BUK75
BUK7513-75B
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Abstract: No abstract text available
Text: D2 PA K BUK7613-75B N-channel TrenchMOS standard level FET Rev. 3 — 27 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7613-75B
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Untitled
Abstract: No abstract text available
Text: BUK7513-75B N-channel TrenchMOS standard level FET Rev. 02 — 25 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7513-75B
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75b diode
Abstract: BUK75 BUK7613-75B
Text: BUK7613-75B N-channel TrenchMOS standard level FET Rev. 2 — 17 November 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7613-75B
75b diode
BUK75
BUK7613-75B
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Untitled
Abstract: No abstract text available
Text: D2 PA K BUK7613-75B N-channel TrenchMOS standard level FET Rev. 3 — 27 December 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7613-75B
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PH4530L
Abstract: No abstract text available
Text: PH4530L N-channel TrenchMOS logic level FET Rev. 02 — 26 January 2005 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PH4530L
PH4530L
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IGN2735M250 Preliminary TECHNOLOGIES, INC. S-Band Radar Transistor GaN on Silicon Carbide FET High Power Gain Excellent thermal stability Gold Metal IGN2735M250 is an internally pre-matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for
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IGN2735M250
IGN2735M250
300us
IGN2735M250-REV-PR1-DS-REV-A
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FAIRCHILD SOT-223 MARK 032
Abstract: No abstract text available
Text: August 1997 FDV304P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize
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FDV304P
FDV304P
FAIRCHILD SOT-223 MARK 032
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FDV304P
Abstract: FDV304 SOIC-16
Text: August 1997 FDV304P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize
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FDV304P
FDV304P
FDV304
SOIC-16
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FDC6304P
Abstract: SOIC-16
Text: July 1997 FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize
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FDC6304P
OT-23
FDC6304P
SOIC-16
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bootstrap diode
Abstract: application note gate driver with bootstrap capacitor IR switch control AN978
Text: DESIGN TIP DT 98-2 International Rectifier • 233 Kansas Street, El Segundo, CA 90245 USA Bootstrap Component Selection For Control IC’s By Jonathan Adams TOPICS COVERED Operation Of The Bootstrap Circuit Factors Affecting The Bootstrap Supply Calculating The Bootstrap Capacitor Value
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MGM5N45
Abstract: MGM5N50 MGP5N45 MGP5N50
Text: MGM5N45 MGM5N50 MGP5N45 MGP5N50 N-CHANNEL ENHANCEMENT MODE SILICON GATE, GAIN ENHANCED MOS FIELD EFFECT TRANSISTOR These GEMFETS are designed for high voltage, high current power controls such as line operated motor controls and converters. o High Input Impedance
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MGM5N45
MGM5N50
MGP5N45
MGP5N50
O-204AA
1092BSC
546BSC
MGM5N45
MGM5N50
MGP5N45
MGP5N50
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S29JL032H70
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book
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PG00-00091-3E
ACD-10131
CD-10131
DS04-27211-5E
MB3789
S29JL032H70
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FET BFW61
Abstract: BFW61 v511 304 fet transistor N CHANNEL FET BFW61
Text: 711Qfl2b D0t7tiflM TS3 M P H I N BFW61 N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in aTO -72 metal envelope w ith the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers.
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7110fl2b
BFW61
aTO-72
FET BFW61
BFW61
v511
304 fet transistor
N CHANNEL FET BFW61
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T39 diode
Abstract: No abstract text available
Text: m otorola sc XSTRS/R 2bE F D L»3b7254 00=10^00 3 MOTOROLA Order this data sheet by IRFZ34/D aai SEMICONDUCTOR TECHNICAL DATA Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS This T M O S Power FET is designed for high voltage,
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3b7254
IRFZ34/D
C65M2
IRFZ34
T39 diode
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304P
Abstract: V304P FDV304P SQT23
Text: August 1997 F A IR O H H -P SEMICONDUCTOR t m FDV304P Digital FET, P-Channei General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize
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FDV304P
304P
V304P
SQT23
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Untitled
Abstract: No abstract text available
Text: R A I R C H A ug ust 1997 I I- D SEM IC ONDUCTO R tm FDV304P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize
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FDV304P
FDV304P
OT-23
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Untitled
Abstract: No abstract text available
Text: July 1997 FAIRCHILD SEM IC ONDUCTO R m FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize
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FDC6304P
OT-23
FDC6304P
0033414b
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1SS SOT-23
Abstract: FDV304P
Text: B A ID C U lL n May 1997 p r e l im in a r y M IC O N D U C T O R tm FDV304P P-Channel, Digital FET General Description Features These P-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize
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FDV304P
1SS SOT-23
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FDV304P
Abstract: FDV304 HIGH VOLTAGE DIODE 6kv SOIC-16 D 304 x
Text: PAIRCHII-D SEM IC ONDUCTO R August 1997 tm FDV304P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize
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FDV304P
FDV304P
OT-23
FDV304
HIGH VOLTAGE DIODE 6kv
SOIC-16
D 304 x
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sot21
Abstract: No abstract text available
Text: July 1997 g A J R g H ty O S E M IC O N D U C T O R tm FDC6304P Digital FET, Dual P-Channel General Description Features These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize
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FDC6304P
sot21
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1da sot-23
Abstract: 1da sot LS05-A FDC6304P SOIC-16 O443
Text: July 1997 FAIRCHILD S E M IC O N D U C T O R w FDC6304P Digital FET, Dual P-Channel General Description F e a tu re s These P-Channel enhancement mode field effect transistor are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize
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FDC6304P
FDC6304P
0033414h
1da sot-23
1da sot
LS05-A
SOIC-16
O443
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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