C30916E
Abstract: rca 036 spot photodetector
Text: G & G/CANA]>A/OPTOELEK I t C J l 10 ]> I 3030blD 0000135 07b Electro uptics and Devices ICANA Photodiode Developmental Type C30916E - f - V 1-51 Large Area Silicon Avalanche Photodiode for General-Purpose Applications 8 5% typical at 900 nm Fast Tim e Response —
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3030blD
C30916E
C30916E
ULS-S223R1
rca 036
spot photodetector
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1012 opamp
Abstract: kss 215
Text: E G & G/CANADA/OPTOELEK 3030blD 0DDD32b b • CANA 47E D HAD Series 1100A T -W -6 7 Features • • Built-in High Speed Amplifier Groundable Case • Shielded Amplifier • Offset Null Control • • W ide Spectral Range Large Active Area Operating Data and Specifications at 23°C
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3030blD
DDDD32b
03V/W
1012 opamp
kss 215
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Untitled
Abstract: No abstract text available
Text: E fi i G / C A N A D A / O P T O E L E K R G i l Optics IO D WÊ 3030blD OOOOObM TTb H C A N A NEW SLETTER PRELIMINARY DATA SHEET SERIES C86048 AND C86070 1060 nm Pulsed Lasers Desiqned and characterized primarily for simulation of Nd/YAG lasers, the diodes are offered in TO-5 outline with window or fiber piqtail.
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3030blD
C86048
C86070
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TCN-1000-12
Abstract: NEP 250 TCN-1000-93 TCN-1000-3
Text: E G & G/CANADA/OPTOELEK H7E D • 3030blD 00D031Ô 7 «CANA TCN-1000 Series -93; -12; - 3 _ t - h i- 6 7 Features • • Built-in Low Noise Amplifier Shielded Feedback Loop • Large Active Area • Shielded Amplifier • • Low Offset Wide Spectral Range
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3D30bl0
TCN-1000
t-hi-67
TCN-1000-93
TCN-1000-12
TCN-1000-3
3Q30bl0
NEP 250
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C86083E
Abstract: DHHS
Text: E G & G/CANADA/OPTOELÊK ETE D 3030blD 000025b □ ICANA 850 nm Quantum Weil7^ ^ : Pulsed Laser Series DATA SHEET C86083E - High power pulsed laser in a coaxial package • T ■ O p eration at 50n s p ulse d u ration and 3 k H z rep etition rate ■ H igh P ea k O u tp u t P ow er:
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3030blD
0000E5b
C86083E
ED-0041/10/89
DHHS
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C30617E
Abstract: C30616E ingaas LED 5-1304 C86013E C30986E C86054E C86057E-13 C86057E-13-TC C86057E-14
Text: E G 8. G / C A N A D A / O P T O E L E K ItCJI 10E D • 3030blD OOQQOn A ■ CANA "H’ Electro InGaAsP Infrared Emitters Optics 1300 nm LED SERIES DATA SHEET C86057E SERIES - D u al-in -L in e p ack ag e S in g le o r m u ltim o d e fiber C86013E C86054E
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3030blG
C86013E
C86054E
1300nm
1300nm)
C30616E,
C30617E
C30986E
C86054E
C30616E
ingaas LED
5-1304
C86057E-13
C86057E-13-TC
C86057E-14
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gaseous lasers
Abstract: C86083E C86093E 910nm laser rca rca 019 1200cu general electric laser 910nm
Text: E G 8. G/CANADA/OPTOELEK Electro Optics 5TE ì> m 3030blD 0D0D2b0 2 • CANA T 1 ¥ /~ O S ^ C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET Coaxial Stud Package m 1r 1 The C86093E is a high power single element pulsed laser diode operating in the 900to 920 nm wavelength band. Using
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3030blD
C86093E
200ns
910nm
C86093E
900to
gaseous lasers
C86083E
910nm
laser rca
rca 019
1200cu
general electric
laser 910nm
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK I t C / l T> I ID 3030blD 0DDD135 Electro uptics and Devices 07b « C A N A Photodiode Developm ental Type C30916E - f 'HI-51 Large Area Silicon Avalanche Photodiode for General-Purpose Applications High Quantum Efficiency 85% typical at 900 nm
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3030blD
0DDD135
C30916E
HI-51
30916E
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dual photodiode
Abstract: 2525BG photodiode amplifier
Text: E G & G / CANADA/OPTOELEK 47E D • 30301=10 000031b 3 «CANA r HUV Dual Series 2525BG Features • • • • • • Dual Channel Photodiode Shielded Amplifier Groundable Case Built-in Low Noise Amplifier W ide Spectral Range Oxide Passivated Structure
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3030L10
000031b
2525BG)
dual photodiode
2525BG
photodiode amplifier
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sg3001
Abstract: 2l688 "rca application note" AN4469 904nm laser rca eg and g laser diode AN-4993 10-dimensional rca 036
Text: E G & G/CANADA/OPTOELEK n IO D • 3030bl0 0000070 SÛO M C A N A "T”- V/- Solid State f l * MW Electro Optics and Devices I f b f l E lectro O p t lC S SG3001 Stacked-Diode Laser Gallium Arsenide Type for Pulse Operation Total Peak Radiant Flux Power Output
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3030bl0
0000Q7fl
SG3001
SG3001
2l688
"rca application note"
AN4469
904nm
laser rca
eg and g laser diode
AN-4993
10-dimensional
rca 036
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Untitled
Abstract: No abstract text available
Text: G 8. G / C A N A D A / O P T O E L E K Electro Optics 2TE D 3D3DblD 00002b0 2 T Z¿/ / ~ O S ^ IC A N A C86093E 910 nm Quantum Well Pulsed Laser DATA SHEET • V ■ ■ ■ ■ Operation at 200ns pulse duration and 5 kHz repetition rate High Peak Output Power:
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00002b0
C86093E
200ns
910nm
C86093E
900to
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Untitled
Abstract: No abstract text available
Text: G & G / CANADA/OPTOELEK Æ• n ■ m 10E D ■ Electro b # ■ Optics *1 :ï ■a T C86045EV1 M C86045EV2 The RCA C86045 and C86053 series are InGaAsP laser diodes designed specifically for fiber optic test systems. The output wavelength 1300 nm is well
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C86045EV1
3030blD
C86045EV2
C86045
C86053
C86045EV1
C86045EV2
C86045EV3,
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AM 22A
Abstract: No abstract text available
Text: E G & G/CANA DA/O PTOE LEK I t C i l IG » 3G3GblD GOGOlbT bfib H C A N A Silicon Photodiodes C30997 Series E le c ,r o Optics ' 'rsj DATA SHEET "à Transimpedance Preamplifier Modules With or Without Integral Fiber Optic Pigtails for Detection of 400 to 1000 nm Radiation
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C30997
C30997-010)
C30997-250)
150kV/W
C30997-XXXQC-YY
14-pin
ED-0015/02/88
AM 22A
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Untitled
Abstract: No abstract text available
Text: E S S 6/CANADA/OPTOELEK m 3030bl0 0000334 5 47 E t ICANA F Series FFD-040;FFD-100;FFD-200 rv/ J3 Features • • • • Low Operating Voltage High Responsivity Ultra-Fast Rise and FallTim e Isolated Photodiode Chip • • • Large Active Area W ide Spectral Range
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3030bl0
FFD-040
FFD-100
FFD-200)
FFD-040B
FFD-100
FFD-200
3030blD
FFD-040A)
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Untitled
Abstract: No abstract text available
Text: E G & G/CANADA/OPTOELEK itc /i 10 ]> tiectrouptics and Devices 3030bl0 0D00GSD MT1 H C A N A Laser Developmental Type Low Threshold CW-Operated Gallium Aluminum Arsenide Injection Laser • Typical Threshold Current — 75 mA ■ Continuous or Pulsed Operation at Room Temperature
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3030bl0
0D00GSD
OP-12
C86000E
C86000E
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C30902S
Abstract: diode C309 C30902E rangefinding tr c3090 C30902 DEAD TIME FOR THE DETECTOR C30902 geiger counter C30921E avalanche photodiode bias
Text: E G & G/CANADA/OPTOELEK I t c / T OptiCS IO T1 Silicon Avalanche Photodiodes 3G3DblD DDGDlEb 0b3 • CANA » C30902E, C30902S, C30921E, C30921S DATA SHEET I High Speed Solid State Detectors for Fiber Optic and Very L o w Lig h t-Le ve l Applications RCA Type C30902E ava
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C30902E,
C30902S,
C30921E,
C30921S
L-571
L-933
C30902E
C30921E
C30902S
diode C309
rangefinding
tr c3090
C30902
DEAD TIME FOR THE DETECTOR C30902
geiger counter
C30921E
avalanche photodiode bias
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2N3818
Abstract: laser rca 2l688 C86000E rca laser eg and g laser diode RCA Solid State S20 rca OP-12 laser diode module 820 nm
Text: G & G/CANADA/OPTOELEK IG ì> 3030blQ GDGDDSG 4T1 • CAN A Laser t ie c t r o u p t ic s i t c j i and Devices Developmental Type Low Threshold CW-Operated Gallium Aluminum Arsenide Injection Laser ■ Typical Threshold Current — 75 mA ■ Continuous or Pulsed Operation at Room Temperature
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3030blQ
OP-12
C86000E
2N3818
laser rca
2l688
rca laser
eg and g laser diode
RCA Solid State
S20 rca
laser diode module 820 nm
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C30817
Abstract: RCA C30817 LXA 102 103 PTS 400 C3081 QQG0107 921S-4
Text: E 6 & 6/CANADA/OPTOELEK 10 » yy- r 3D30fc>10 ÜÜ001D5 33^ B K A N A WM flTB ÆM Electro Photodiode C30817 DATA SHEET • mw#loptics Silicon Avalanche Photodiode for General-Purpose Applications ■ High Quantum Efficiency — 85% typical at 900 nm — 18% typical at 1060 nm
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3D30fc
001Q5
C30817
Range--40Â
C30817
ED-0030/10/88
RCA C30817
LXA 102 103
PTS 400
C3081
QQG0107
921S-4
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