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    302 SOT 23 Search Results

    302 SOT 23 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
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    302 SOT 23 Price and Stock

    TT Electronics plc SOT-DIV23LF-02-2502-5002-FF

    Resistor Networks & Arrays 25K/50Kohm 1% 25ppm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SOT-DIV23LF-02-2502-5002-FF
    • 1 $1.38
    • 10 $1.23
    • 100 $0.887
    • 1000 $0.523
    • 10000 $0.49
    		Get Quote

    MACOM SMV2302A-SOT23-R

    PIN Diodes Diode,SMV2302A-SOT23-R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SMV2302A-SOT23-R
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $25.91
    		Get Quote

    Linear Integrated Systems LS302-SOT-23

    High Voltage, Super Beta, MonolithicDual,NPNTransistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NAC LS302-SOT-23 Reel 1
    • 1 $4.6
    • 10 $4.6
    • 100 $4.38
    • 1000 $4.17
    • 10000 $4.17
    		Buy Now

    302 SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LTC201

    Abstract: LTC202 LTC203 LTC221 LTC222 R251
    Text: RELIABILITY DATA LTC201 / LTC202 / LTC203 / LTC221 / LTC222 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE CERDIP SIDEBRAZE PLASTIC DIP SOIC/SOT/MSOP NEWEST DATE CODE 302 9016 79 9016 310 9101 77 9304 768 • HIGHLY ACCELERATED STRESS TEST AT +131°C/85%RH


    Original     		PDF LTC201 LTC202 LTC203 LTC221 LTC222 00-03-6209B. LTC222 R251

    LTC36

    Abstract: LTC3541 LTC3100
    Text: Reliability Data Report Product Family R415 LTC1697/1701/1774 LTC1911/67/1968 LTC2442 LTC3025/26/35 LTC3100/01/05/22/25/27 LTC3200/01/02/03/04/05/06/07/08/09 LTC3210/12/14/15/16/17/18/19/20/21 LTC3240/50/51/52 LTC3400/01/02/03/05/06/07/08/09/10 LTC3411/12/13/14/15/16/17/18


    Original     		PDF LTC1697/1701/1774 LTC1911/67/1968 LTC2442 LTC3025/26/35 LTC3100/01/05/22/25/27 LTC3200/01/02/03/04/05/06/07/08/09 LTC3210/12/14/15/16/17/18/19/20/21 LTC3240/50/51/52 LTC3400/01/02/03/05/06/07/08/09/10 LTC3411/12/13/14/15/16/17/18 LTC36 LTC3541 LTC3100

    BC557

    Abstract: BC557 bc556 transistor BC559 BC856 on semiconductor
    Text: BC856ALT1 Series Preferred Devices General Purpose Transistors PNP Silicon MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Value Unit Collector-Emitter Voltage VCEO –65 –45 –30 V Collector-Base Voltage VCBO –80 –50 –30 V Emitter–Base Voltage


    Original     		PDF BC856ALT1 BC856 BC857 BC858, BC859 Temperat30 BC557 BC557 bc556 transistor BC559 BC856 on semiconductor

    a8805

    Abstract: AME88052EFTZ A-8813 T 1K sot-89 transistors sot-223 sot top marking codes marking codes transistors a1 sot-89 O A B C sot-89 a8805 lef diode sot-89 marking code
    Text: AME, Inc. AME8805 / 8813 n General Description The AME8805/8813 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-89, SOT-223 and SOT-23 packages are attractive for "Pocket" and "Hand Held" applications.


    Original     		PDF AME8805 AME8805/8813 OT-89, OT-223 OT-23 600mA 2006/2095-DS8805/8813-R a8805 AME88052EFTZ A-8813 T 1K sot-89 transistors sot-223 sot top marking codes marking codes transistors a1 sot-89 O A B C sot-89 a8805 lef diode sot-89 marking code

    a8805

    Abstract: AME8805AEGTZ AME8805OEFT AME8805 AME8805AEFT AME8805AEFTZ AME8805BEFT AME8805BEFTZ AME8805CEFT AME8813
    Text: AME AME8805 / 8813 n General Description The AME8805/8813 family of positive, linear regulators feature low quiescent current 30µA typ. with low dropout voltage, making them ideal for battery applications. The space-saving SOT-89, SOT-223 and SOT-23 packages are attractive for "Pocket" and "Hand Held" applications.


    Original     		PDF AME8805 AME8805/8813 OT-89, OT-223 OT-23 600mA 600m2 2006/2095-DS8805/8813-R a8805 AME8805AEGTZ AME8805OEFT AME8805AEFT AME8805AEFTZ AME8805BEFT AME8805BEFTZ AME8805CEFT AME8813

    35N15

    Abstract: W35N15
    Text: NTB35N15 Power MOSFET 37 Amps, 150 Volts N−Channel Enhancement−Mode D2PAK Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • http://onsemi.com Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		PDF NTB35N15 tpv10 35N15 W35N15

    HALON 2402

    Abstract: HSOP-30 CFC-217 CFC2-15
    Text: Product Chemical Content Brochure BRD8022/D Rev. 1, Feb–2002  SCILLC, 2002 Previous Edition  2001 “All Rights Reserved” Introduction Dear Customer: ON Semiconductor is proud to introduce its first Product Chemical Content brochure for its products. This information


    Original     		PDF BRD8022/D r14525 HALON 2402 HSOP-30 CFC-217 CFC2-15

    LMT86-Q1

    Abstract: LMT87-Q1
    Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents LMT84, LMT84-Q1 SNIS167B – MARCH 2013 – REVISED MAY 2014 LMT84/LMT84-Q1 1.5V, SC70/TO-92/TO-126, Analog Temperature Sensors with Class-AB Output 1 Features 3 Description


    Original     		PDF LMT84, LMT84-Q1 SNIS167B LMT84/LMT84-Q1 SC70/TO-92/TO-126, O-126 LMT86-Q1 LMT87-Q1

    FMCW Radar

    Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
    Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.


    Original     		PDF 3800-Pirituba E-28760 DK-2750 FMCW Radar radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"

    transistor bf 968

    Abstract: No abstract text available
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz rs e b m : u t E n o T t n O


    Original     		PDF NE680 NE68030-T1 NE68033-T1B NE68035 NE68039-T1 NE68039R-T1 transistor bf 968

    mje 1303

    Abstract: BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X NE680
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    Original     		PDF NE680 NE680 NE68030-T1-A NE68033-T1B-A1 NE68035 NE68039-T1-A1 NE68039R-T1 NE68800 mje 1303 BJT BF 331 ET 439 nec d 882 p transistor transistor BI 342 905 682 SOT23 MARKING transistor NEC D 587 transistor KF 517 NE AND micro-X

    transistor BF 697

    Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
    Text: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE


    Original     		PDF NE680 NE68800 NE68018-T1-A1 NE68019-T1-A1 NE68030-T1-A1 transistor BF 697 transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507

    Untitled

    Abstract: No abstract text available
    Text: LMT84 www.ti.com SNIS167 – MARCH 2013 LMT84 1.5V, SC70, Analog Temperature Sensor with Class-AB Output Check for Samples: LMT84 FEATURES DESCRIPTION • • The LMT84 is a precision analog output CMOS integrated-circuit temperature sensor that operates at


    Original     		PDF LMT84 SNIS167 LMT84

    LB 122 transistor To-92

    Abstract: NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 00 CHIP 35 (MICRO-X) 32 (TO-92)


    Original     		PDF NE856 NE85600 24-Hour LB 122 transistor To-92 NE85600 NE85632 Mje 1532 NEC NE85635 2SC4226 2SC5006 2SC5011 NE856 NE85635

    973-120

    Abstract: 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006
    Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz E B • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION 35 MICRO-X 00 (CHIP) • LOW COST


    Original     		PDF NE856 NE856 NE85632 NE85633-T1B NE85634-T1 NE85635 NE85639-T1 NE85639R-T1 973-120 2sc3357 marking K "micro x" Micro-X Marking 865 NE AND micro-X NEC C 324 C NEC NE85635 transistor marking 551 sot-89 2SC4226 2SC5006

    Untitled

    Abstract: No abstract text available
    Text: E C S INC 14TE D • 302^31=2 0 0 0 0 1 0 2 Ô TT « E C S I So-T.'b FULL RANGE CRYSTAL QUARTZ OSCILLATORS INDEPENDENT DUAL OUTPUT COMPLACENCE CRYSTAL OSCILLATOR ECS-8100 SERIES FEATURES # Oscillate independent Two-frequency. 0 W ide frequency rangel3.5MHz lo SOMHzl.


    OCR Scan     		PDF ECS-8100 14-pin 50MHz 100ppm

    Untitled

    Abstract: No abstract text available
    Text: MTMI.1-125-15 -T -S - 500 NO. PINS PER ROW CLT. SOT. ItRQ "Lr. Svlfvi. iviVIS. fCSC LEAD STYLE PLATING OPTION ROW OPTION Specifications: MTMM HI-TEM P POST HEIGHT OPTION 3 - i ‘X X ” Insulator Material: = Polarized Position 01 thru 50 Black Liquid Crystal Polymer


    OCR Scan     		PDF 00020S6 1-800-SAMTEC-9

    philips bsd215

    Abstract: BST110 BF909WR
    Text: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment


    OCR Scan     		PDF BC264A BC264B BC264C BC264D BF245A BST120 BST122 PHP112 PHP125 PHC2102501 philips bsd215 BST110 BF909WR

    mb 8719

    Abstract: SAT-213 da9l mosfet 40a 200v RFC1628 Xi 6000 Series UPS bjt 522 H9801 ic TA 8719 SAU202
    Text: NnnKpn .X - ^ V 'C W f¿¡ft ^ 53+ g a * i s T. s V oi £ y r4 mcci# c* o .f iS O T C e "I i m ^ 4? $ä g iff • “ *s Se IBS i a 33 tP J - Üi * , P ¡fô X G < V /w £3£ ■ = ^D J# J tt¡ ag -fe r ■' KH <r o 5fê ts q <J g P Q^ K <J . ^^ 6 ^ ±H


    OCR Scan     		PDF R4-26-22 miEATffi15-6 T812-odi -U13JE1-9808070TA mb 8719 SAT-213 da9l mosfet 40a 200v RFC1628 Xi 6000 Series UPS bjt 522 H9801 ic TA 8719 SAU202

    MA4T64500

    Abstract: 4558 MA4T64535 557 sot143 micro X
    Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV


    OCR Scan     		PDF 4T64500 MA4T64533 MA4T64535 OT-23 MA4T64539 OT-143 MA4T645XX OT-143) MA4T64500 4558 MA4T64535 557 sot143 micro X

    HA 12058

    Abstract: TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT - 10 G H z • LOW NOISE FIGURE: 1.7 dB at 2 G H z 2.6 dB at 4 G H z • HIGH ASSOCIATED GAIN: 12.5 dB at 2 G H z 8.0 dB at 4 G H z • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE


    OCR Scan     		PDF NE680 HA 12058 TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor

    702 TRANSISTOR

    Abstract: HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDW IDTH PRO DU CT: fT = 10 GHz • LOW NOISE FIG URE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIG H ASSO C IA TED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VO LTAG E LOW C U R R EN T PERFO RM AN CE


    OCR Scan     		PDF NE680 PACKAGEOUTUNE39 PACKAGEOUTUNE39R m27S2S 702 TRANSISTOR HA 12058 706 TRANSISTOR sot-23 540 w 03 oj 3E-015 0 261 S04 663

    LDR 03

    Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
    Text: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren


    OCR Scan     		PDF

    LC8800

    Abstract: LC89000 8900c LC8900 7W07b FS48K 31-4804
    Text: SANYO SEMICONDUCTOR CORP S3E T> • 7^7071, 0010417 ôôb W T S A J T - S ?.- S e - I O lifc g a -K N a EN3743 ~1 No. 3 743 ~ ~ L C 8 9 0 0 iL C 8 9 0 0 Q SAXYO CM OS LSI Digital Audio Interface Receiver Overview: The LC8900/8900Q is a C M O S L SI circuit chip that can be used to enable the E1AJ form atted data transmission


    OCR Scan     		PDF EN3743 LC8900/8900Q 48kHz 32kfe 17D7b 00104H7 LC8900, LC8900Q 00104Sfl LC8800 LC89000 8900c LC8900 7W07b FS48K 31-4804