25C2625
Abstract: MHPA19010N
Text: Freescale Semiconductor Technical Data Document Number: MHPA19010N Rev. 6, 5/2006 PCS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity
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MHPA19010N
25C2625
MHPA19010N
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Untitled
Abstract: No abstract text available
Text: MHL9838 Rev. 4, 1/2005 Freescale Semiconductor Technical Data Replaced by MHL9838N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MHL9838 Designed for ultra- linear amplifier applications in 50 ohm systems operating in
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MHL9838
MHL9838N.
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Untitled
Abstract: No abstract text available
Text: Document Number: MHL21336N Rev. 8, 12/2006 Freescale Semiconductor Technical Data Replaced by MHL21336NN. There are no form, fit or function changes with this part replacement. MHL21336N Designed for ultra - linear amplifier applications in 50 ohm systems operating
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MHL21336N
MHL21336NN.
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Untitled
Abstract: No abstract text available
Text: MHPA19010 Rev. 3, 1/2005 Freescale Semiconductor Technical Data Replaced by MHPA19010N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MHPA19010 Designed for Class AB amplifier applications in 50 ohm systems operating in
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MHPA19010
MHPA19010N.
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Cellular Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra- linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity
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MHL9236MN
MHL9236MN
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Untitled
Abstract: No abstract text available
Text: MHPA21010N Rev. 4, 1/2005 Freescale Semiconductor Technical Data UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems.
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MHPA21010N
MHPA21010N
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MHL21336
Abstract: No abstract text available
Text: MOTOROLA Order this document by MHL21336/D SEMICONDUCTOR TECHNICAL DATA The RF Line 3G Band RF Linear LDMOS Amplifier MHL21336 Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding
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MHL21336/D
MHL21336
301AP
MHL21336
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MHL9236
Abstract: No abstract text available
Text: MHL9236 Rev. 3, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MHL9236N and MHL9236MN in March 2005. There are no form, fit or function changes with these part replacements. N suffix added to part number to indicate transition to lead - free terminations.
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MHL9236N
MHL9236MN
MHL9236
MHL9236M
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IRL40
Abstract: 3332-G
Text: Freescale Semiconductor Technical Data Document Number: MHL9236N Rev. 7, 2/2006 Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding
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MHL9236N
MHL9236.
MHL9236N
IRL40
3332-G
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHL18336N Rev. 4, 7/2005 PCS Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding
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MHL18336N
MHL18336.
MHL18336N
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Replaced by MHL21336NN. There are no form, fit or function changes with this part replacement. MHL21336N 3G Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra - linear amplifier applications in 50 ohm systems operating
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MHL21336NN.
MHL21336N
MHL21336N
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHL19338N Rev. 5, 7/2005 PCS Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding
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MHL19338N
MHL19338.
MHL19338N
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Replaced by MHL9236NN. There are no form, fit or function changes with this part replacement. MHL9236N Cellular Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra - linear amplifier applications in 50 ohm systems operating
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MHL9236NN.
MHL9236N
MHL9236N
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MHL9838N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHL9838N Rev. 6, 7/2005 Cellular Band RF Linear LDMOS Amplifier MHL9838N Designed for ultra- linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding
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MHL9838N
MHL9838.
MHL9838N
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Untitled
Abstract: No abstract text available
Text: MHL21336N Rev. 5, 1/2005 Freescale Semiconductor Technical Data 3G Band RF Linear LDMOS Amplifier MHL21336N Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding
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MHL21336N
MHL21336
MHL213emiconductor
MHL21336N
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3332-G
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 Cellular Band RF Linear LDMOS Amplifiers Designed for ultra - linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding
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MHL9236
MHL9236M
MHL9236N
MHL9236MN
3332-G
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king 525
Abstract: power linear amplifier freescale power linear LDMOS freescale MHL19338NN
Text: Freescale Semiconductor Technical Data Document Number: MHL19338NN Rev. 0, 12/2006 Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity
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MHL19338NN
301AP
king 525
power linear amplifier freescale
power linear LDMOS freescale
MHL19338NN
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king 525
Abstract: MHL18336 MHL18336N
Text: Freescale Semiconductor Technical Data Document Number: MHL18336N Rev. 5, 8/2006 Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity
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MHL18336N
MHL18336.
king 525
MHL18336
MHL18336N
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MHPA18010N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHPA18010N Rev. 4, 5/2006 Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase
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MHPA18010N
MHPA18010N
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MHL19338N
Abstract: MHL19338NN
Text: Freescale Semiconductor Technical Data Document Number: MHL19338N Rev. 7, 12/2006 Replaced by MHL19338NN. There are no form, fit or function changes with this part replacement. MHL19338N Designed for ultra - linear amplifier applications in 50 ohm systems operating
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MHL19338N
MHL19338NN.
MHL19338N
MHL19338NN
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MHPA21010
Abstract: MHPA21010N
Text: Freescale Semiconductor Technical Data MHPA21010 Rev. 3, 1/2005 Replaced by MHPA21010N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MHPA21010 Designed for Class AB amplifier applications in 50 ohm systems operating in
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MHPA21010
MHPA21010N.
MHPA21010
MHPA21010N
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MHPA21010N
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHPA21010N Rev. 6, 5/2006 Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems.
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MHPA21010N
MHPA21010N
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MHL21336N
Abstract: MHL21336NN
Text: Freescale Semiconductor Technical Data Document Number: MHL21336N Rev. 8, 12/2006 Replaced by MHL21336NN. There are no form, fit or function changes with this part replacement. MHL21336N Designed for ultra - linear amplifier applications in 50 ohm systems operating
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MHL21336N
MHL21336NN.
MHL21336N
MHL21336NN
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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