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    30100 TRANSISTOR Search Results

    30100 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    30100 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IKW40N120H3

    Abstract: IKW40N60 30100 transistor IKW25N120H3 welding inverter IKW40N120T2 Induction Heating Resonant Inverter IGW40N120H3 IKW50N60T IKW40N60H3
    Text: Discrete IGBT Selection Tree YES IGBT NO Single IGBT IGBT + Anti-Parallel Diode Soft Hard Diode Commutation Frequency Range 2 – 20 kHz TRENCHSTOP 20 – 100 kHz HighSpeed 2 – 20 kHz TRENCHSTOP™ Duopack 8 – 60 kHz RC series (monolythic) 2 – 20 kHz


    Original     		PDF IGpccN60H3 IGpccN120H2 IGpccN120H3 IGpccN60T. IGpccN100T IGpccT120. IGpccN120 IHpccN60T. IHpccT60. IHpccN90T IKW40N120H3 IKW40N60 30100 transistor IKW25N120H3 welding inverter IKW40N120T2 Induction Heating Resonant Inverter IGW40N120H3 IKW50N60T IKW40N60H3

    2N3701

    Abstract: 2N3700
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700 2N3701 TO-18 General purpose amplifier ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE VCBO 140 Collector -Base Voltage VCEO 80


    Original     		PDF ISO/TS16949 2N3700 2N3701 C-120 2N3701 2N3700

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700 2N3701 TO-18 General purpose amplifier ABSOLUTE MAXIMUM RATINGS.


    Original     		PDF 2N3700 2N3701 C-120

    2N3701

    Abstract: 2N3700
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N3700 2N3701 TO-18 General purpose amplifier ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL VALUE VCBO 140 Collector -Base Voltage


    Original     		PDF 2N3700 2N3701 C-120 2N3701 2N3700

    417900-207CG

    Abstract: GV3000 HE-HGV3DN reliance gv3000 software start up 2DB2010 2CA3000 2AX3000 tamagawa 30V2060 reliance 200 HP dc motor MANUAL
    Text: GV3000/SE AC Drive Hardware Reference, Installation, and Troubleshooting 30-100 HP @ 230 VAC Version 6.04 Instruction Manual D2-3417-1 The information in this manual is subject to change without notice. Throughout this manual, the following notes are used to alert you to safety considerations:


    Original     		PDF GV3000/SE D2-3417-1 RS-232) D2-3417-1 417900-207CG GV3000 HE-HGV3DN reliance gv3000 software start up 2DB2010 2CA3000 2AX3000 tamagawa 30V2060 reliance 200 HP dc motor MANUAL

    CSC1573

    Abstract: CSC1573A
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTORS CSC1573 CSC1573A TO-237 BCE High Voltage General Amplifier CSC1573 is Complementary of CSA879 ABSOLUTE MAXIMUM RATINGS Ta=25deg C DESCRIPTION SYMBOL


    Original     		PDF ISO/TS16949 CSC1573 CSC1573A O-237 CSC1573 CSA879 25deg 750mW/Potting CSC1573A

    Untitled

    Abstract: No abstract text available
    Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTORS CSC1573 CSC1573A TO-237 BCE High Voltage General Amplifier CSC1573 is Complementary of CSA879


    Original     		PDF CSC1573 CSC1573A O-237 CSC1573 CSA879 25deg 750mW/Potting 750mW

    RUR30100

    Abstract: rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V
    Text: RUR3070/30Q0, B U R 3090/30100 HARRIS HARRIS SEMICOND SECTOR 5bE D • 43D2271 00423^5 511 I HAS May 1992 Features 30A Ultrafast Diode With Soft Recovery Characteristic Package 3 - / 7 T0-220AC • Ultrafast with Soft Recovery Characteristic {tfr < 110ns


    OCR Scan     		PDF 43D2571 110ns) RUR3070, RUR3080, RUR3090, RUR30100 RUR3080. RUR3090RUR30100 rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS 1*FE@ I C/ V c E PNP TO-66 2N3740A 60 1 30-100@.25/l 2N3740A 60 1 2N3741A 80 2N3741A V cE O V cE (sat) pr D * WATTS (MHz) .6@1/.125 25 4 30-100@.25/l .6@1/.125


    OCR Scan     		PDF 2N3740A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956

    transistor A7a

    Abstract: 2N3740A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956 2N6212A
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-66 sus VOLTS Ic (max) AMPS 1*FE@ I c / V ce DEVICE TYPE 2N3740A 60 1 30-100@.25/l 2N3740A 60 1 2N3741A 80 2N3741A ^CEO PACKAGE PNP TO-66 VcE(s»t) pr D* WATTS (MHz) .6@1/.125 25 4 30-100@.25/l .6@1/.125


    OCR Scan     		PDF 2N3740A 2N3741A 2N4898 2N4899 2N4900 2N5954 2N5955 2N5956 transistor A7a 2N6212A

    2N1716

    Abstract: 2N3738 2N3879 2N3767
    Text: BIPOLAR bvceo VOLTS / T0-205 T° -5 ^ nr TO-213 (TO-66) ( •- 1m 4t} PEAK ■c AMPS hFE min/max < DEVICE TYPE < o m PACKAGE o NPN MESA POWER TRANSISTORS VCE (sat) max VOLTS ■c @ ' b A A 2N1714* 60 0.75 20 min 0.2/5.0 2.0 0.2/0.02 2N1715* 100 0.75 20 min


    OCR Scan     		PDF T0-205 2N1714* 2N1715* 2N1716 2N1717* O-213 2N3584* 2N3585* 2N3766* 2N3767* 2N3738 2N3879 2N3767

    2N4342

    Abstract: 2N4360 2N5033 2N4343 2N4381 2N5474 2N4303 2n6485 2N4382 2N4039
    Text: 2048352 "DÌÒDÈ fRANSI STÖR 'cÒ INC 840 00137 D r a aaMê 3 sa 000D137 1 -17 r. -DIODE TRANSISTOR CÜ.ÍWC. T PNPTO-66 » i o d e ’ ransis‘ tor co inc 201 689-0400 « T e le x; 139485 • Outside NY & NJ area call T O L L F R E E 800-526-4581 jF A X No. 201-575-5883


    OCR Scan     		PDF PNPTO-66 000D137 J31QDE TRdf\J515T0R 30a/a) 2N3740 2N3766 2N3740A 2N3767 2N3741 2N4342 2N4360 2N5033 2N4343 2N4381 2N5474 2N4303 2n6485 2N4382 2N4039

    2N372A

    Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506
    Text: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665


    OCR Scan     		PDF 2N3501 2N3506 2N3507 2N3508 l/10m 2N3509 2N3511 15min 2N3571 2N372A 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-66 lc MAX = 1-5A VcEO(SUS) • 40-425V PNP Power Transistors NPN Typ. No. 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 coinplMMnl 2N3766 2N3767 2N4910 2N4911 2N4912 (A) VCE(SAT) 0IC/IB (V0A/A) VBE IOVCE


    OCR Scan     		PDF 0-425V 2N3740 2N3740A 2N3741 2N3741A 2N4898 2N4899 2N4900 2N5344 2N3766

    Untitled

    Abstract: No abstract text available
    Text: SSDI TRANSISTORS* - THE NPN TRANSISTORS CHIP TYPE INDUSTRY REFERENCE C AMPS hFE b v ceo (VOLTS) ^ 40-450 10-100(50mA,5V) IC’ VCE^ C6E 2N3738,9 0.5 C6T 2N5010-15 0.5 500-lK(CER) 30-180(25mA,10V) 2N5092,5,7 1.0 350-450 10-100(.2A,5V) SPT5502,3 1.0 70.0-800 (CER)


    OCR Scan     		PDF 2N3738 2N5010-15 500-lK 2N5092 SPT5502 SPT6502 2N4300 2N5152 2N4150 2N3996-9

    0103 MA transistor

    Abstract: KRA226M 224M 226M KRA221M KRA222M KRA223M KRA224M KRA225M transistor 0103
    Text: KEC KOREA ELECTRONICS CO.,LTD. KRA221MKRA226M SEMICONDUCTOR EPITAXIAL PLANAR PNP TRANSISTOR TECHNICAL DATA HIGH CURRENT SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES • • • • With Built-in Bias Resistors. Simplify Circuit Design.


    OCR Scan     		PDF KRA221M-KRA226M -800mA. KRA221M KRA222M KRA223M KRA224M KRA225M KRA226M KRA226M KRA225M 0103 MA transistor 224M 226M transistor 0103

    30100 transistor

    Abstract: RURP3080
    Text: < X | % ms h a r r RURP3070, RURP3080, RURP3090, RURP30100 i s „ . . c o n - u c t o . 30A, 700V - 1000V Ultrafast Diodes April 1 9 9 5 Features Package • Ultrafast with Soft Recovery Characteristic *rr < 110ns JE D E C TO-22QAC ANODE CATHODE • +175°C Rated Junction Temperature


    OCR Scan     		PDF RURP3070, RURP3080, RURP3090, RURP30100 O-22QAC 110ns) RURP30100 30100 transistor RURP3080

    Untitled

    Abstract: No abstract text available
    Text: f il h a r r is u i s , . , . . , , « RHRP3070, RHRP3080, RHRP3090, RHRP30100 , . , 30A, 700V - 1000V Hyperfast Diodes Aprii 1995 Package Features • Hyperfast with Soft R ecovery.<65ns JE DEC TQ -220A C • Operating Tem p eratu


    OCR Scan     		PDF RHRP3070, RHRP3080, RHRP3090, RHRP30100 -220A RHRP3090 TA49064)

    PS2002B

    Abstract: PS2002 PC715V PS2012 TLP570 PC716V PS2604 PS2654
    Text: L E D -D arlin g to n Transistor w ithout Base Connection LED-i*— U > I- > • 7 * I- • f- 7 LU LU LU * If max mA P d\ max (mW) max (V) V cc‘ 1 I0IJ P o2 max max (m A) (mW ) (k V ) IO L DC/AC* To min max 'k Vf max / If 2 c> max typ* (pF) typ* if*)


    OCR Scan     		PDF PS2002B PS2012 TLP570 PS2604 PS2654 PS2654ii PC715V PC716V PS2002 TLP570 PC716V

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


    OCR Scan     		PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    TLN119

    Abstract: TPS616
    Text: TOSHIBA TPS616 TOSHIBA PHOTO TRANSISTOR SILICON NPN EPITAXIAL PLANAR TPS616 FLOPPY DISK DRIVE VCR POSITION DETECTOR OF HOME ELECTRIC EQUIPMENT OPTO-ELECTRONIC SWITCH • 953.1mm epoxy resin package, black • Light current • H alf value angle : 0 * = ± 3 0 ° (TYP.)


    OCR Scan     		PDF TPS616 TLN119 TLN119 TPS616

    2N5302 EB

    Abstract: 2N1463 2n4271
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3


    OCR Scan     		PDF SaD01 2N37S9 2N3790 2N3792 2N4398 2N4399 2N4902 2N4903 2N4904 2N4905 2N5302 EB 2N1463 2n4271

    Untitled

    Abstract: No abstract text available
    Text: - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Description CECC Ceramic Surface Mount Dual Transistor Dual device in CSM Ceramic Surface Mount Dual device in CSM 50004-017 50004-017 50004-017 50004-017 50004-133 50004-133 50003-021 50003-021 Polarity Package lc_cont


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: RURG3070\ RURG3080, RURG3090, RURG30100 nn k a f ^ r i s ulJ 30A, 700V - 1 000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery ,<110ns • Operating T em p eratu re. . . . ,+175°C • Reverse Voltage Up To . . . . . ,1000V JEDEC STYLE 2 LEAD TO-247


    OCR Scan     		PDF RURG3070\ RURG3080, RURG3090, RURG30100 110ns O-247 RURG3070, RURG3090 TA9904)