S69B
Abstract: smd fuse 050f LM5068-1 SMD R0805 R2512 resistor SMD R1206 marking S67B
Text: LM5068 LM5068 Negative Voltage Hot Swap Controller Literature Number: SNVS254B LM5068 Negative Voltage Hot Swap Controller General Description Features The LM5068 hot-swap controller provides intelligent control of power supply connections during the insertion and removal of circuit cards powered by live system backplanes.
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LM5068
LM5068
SNVS254B
S69B
smd fuse 050f
LM5068-1
SMD R0805
R2512 resistor
SMD R1206
marking S67B
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SFD60N03L
Abstract: No abstract text available
Text: SFD60N03L Electrical Characteristics Symbol TC = 25 °C unless otherwise noted Parameter Test Conditions Min Typ Max Units 30 - - V - 0.02 - V/°C VDS = 30V, VGS = 0V - - 1 uA VDS = 24V, TC = 125 °C - - 10 uA Gate-Source Leakage, Forward VGS = 20V, VDS = 0V
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SFD60N03L
250uA
SFD60N03L
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7N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N50 Preliminary Power MOSFET 7A, 500V N-CHANNEL POWER MOSFET 1 The UTC 7N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220
O-220F1
QW-R502-527
7N50
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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24N50
24N50
QW-R502-533
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF9640 Preliminary Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device hasan advantage of include fast switching, low on-resistance, ruggedized device design and low
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UF9640
UF9640
O-220
QW-R502-484
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480b
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2N80 Preliminary Power MOSFET 2A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology is specialized in allowing a
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O-220F
O-252
QW-R502-480
480b
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11n90
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 11N90 Preliminary 11 Amps, 900 Volts N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in
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11N90
O-220
11N90
O-220F1
QW-R502-497
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15N65
Abstract: DSA008952 N-channel MOSFET to-247
Text: UNISONIC TECHNOLOGIES CO., LTD 15N65 Preliminary Power MOSFET 15 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a
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15N65
15N65
QW-R502-481
DSA008952
N-channel MOSFET to-247
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MJ192
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary Power MOSFET 22A, 200V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
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22N20
O-220
22N20
O-252
QW-R502-611
MJ192
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9N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET 9 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state
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QW-R502-522
9N50
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Untitled
Abstract: No abstract text available
Text: Filter Type Feedthrough EMI Filter Datasheet SFBD 12-32 UNEF Tread : 4.75mm Hexagonal Head Circuit Configurations Available Electrical Details Electrical Configuration Capacitance Measurement Current Rating Insulation Resistance (IR) Temperature Rating Ferrite Inductance (Typical)
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1000hr
-55oC
125oC
31lbf
65lbf
P108893)
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8n80
Abstract: MOSFET 8N80 ua 471 TO-220-F1 8N80L-TA3-T 8N80G-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state
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O-220
O-220F1
QW-R502-471
8n80
MOSFET 8N80
ua 471
TO-220-F1
8N80L-TA3-T
8N80G-TA3-T
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24N50
Abstract: mosfet 24n50 24N50L-T47-T
Text: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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24N50
24N50
QW-R502-533
mosfet 24n50
24N50L-T47-T
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16N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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16N50
O-220F
16N50
O-220F2
QW-R502-532
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10n50
Abstract: TO-220F1 DIODE 531 mosfet 10a 500v 10N50G
Text: UNISONIC TECHNOLOGIES CO., LTD 10N50 Preliminary Power MOSFET 10A, 500V N-CHANNEL POWER MOSFET 1 The UTC 10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
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10N50
O-220
10N50
O-220F1
QW-R502-531
TO-220F1
DIODE 531
mosfet 10a 500v
10N50G
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FQP45N03L
Abstract: No abstract text available
Text: QFET TM FQP45N03L 30V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQP45N03L
FQP45N03L
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FQT5N20L
Abstract: No abstract text available
Text: QFET TM FQT5N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQT5N20L
FQT5N20L
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SSF45N20A
Abstract: No abstract text available
Text: SSF45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.065 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 26.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V
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SSF45N20A
SSF45N20A
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Untitled
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFW/I634A FEATURES BVDSS = 250 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.45Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 8.1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 250V
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IRFW/I634A
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 6N90Z Power MOSFET 6.2A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N90Z is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a
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6N90Z
6N90Z
6N90Zat
QW-R502-953
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF9Z34 Preliminary POWER MOSFET -17A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF9Z34 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.
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UF9Z34
UF9Z34
O-220
UF9Z34L-TA3-T
UF9Z34G-TA3-T
QW-R502-843
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mj 901
Abstract: No abstract text available
Text: UFZ24N UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 28A, 60V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC UFZ24N is an N-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on state resistance, high switching speed and low gate
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UFZ24N
UFZ24N
O-220
O-251
O-252
UFZ24NL-TA3-T
UFZ24NG-TA3-T
UFZ24NL-TM3-T
UFZ24NG-TM3-T
mj 901
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PANASONIC Aluminum Electrolytic FA
Abstract: 14x44 25X64 22X54
Text: Aluminum Electrolytic Capacitors Large Can Type For Photo Flash For Photo Flash Features • ■ ■ ■ Compact size Stable & low leakage current Low loss factor & excellent charge/discharge characteristics Lead wire type FP-Series Specifications AS type
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120Hz,
300nF
600nF
applicat00
25x33
25x36
25x39
25x44
25x49
PANASONIC Aluminum Electrolytic FA
14x44
25X64
22X54
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OPAmp Labs
Abstract: riaa eq I60n octal tube socket pink noise generator "Microphone Preamplifier" 24v up Audio amplifier transformers price mu metal pink noise
Text: OPAMP LABS IN C M2E Ja7 ‘i t , 1 fc>3 OODOS 4 1 T> 0 P A 'V-riH~C5 ~ Û f S • 1SINGLE POLARITY P-S MODULESFIFRÇ o sril I ATOPQ AMPLIFIERS - OSCILLATORS A D A IIA D A D C IM/« OPAMP ILABS INC. POWER SUPPLIES-AUDIO CONSOLES 1033 N. SYCAMORE AVENUE F.O.B. LOS ANGELES, CA.
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OODOS41
8VT030V
F/15V
-50db
18dbm
20KHz
I00CY
200CY
440CY
500CY
OPAmp Labs
riaa eq
I60n
octal tube socket
pink noise generator
"Microphone Preamplifier"
24v up Audio amplifier
transformers price
mu metal
pink noise
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