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    300NS Search Results

    300NS Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    HM1-6504/B Rochester Electronics LLC HM1-6504 - Standard SRAM, 256X4, 300ns, CMOS Visit Rochester Electronics LLC Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
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    300NS Price and Stock

    MOSLEADER SM2300NSAC-TRG-ML

    N 20V 6A SOT-23
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    DigiKey SM2300NSAC-TRG-ML Reel 300,000 200
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    MOSLEADER SM2300NSANC-TRG-ML

    N 20V 4A SOT-23N
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SM2300NSANC-TRG-ML Reel 300,000 200
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    • 10000 $0.03122
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    TOKO Inc 300NS-R22M=P2

    FIXED IND 220NH 190MA 430 OHM
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    DigiKey 300NS-R22M=P2 Cut Tape 236 1
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    TOKO Inc 300NS-R82M=P2

    FIXED IND 820NH 135MA 860 OHM
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    DigiKey 300NS-R82M=P2 Cut Tape 151 1
    • 1 $0.34
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    TOKO Inc 300NS-R39M=P2

    FIXED IND 390NH 155MA 590 OHM
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    DigiKey 300NS-R39M=P2 Cut Tape 134 1
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    Find more 300NS price and stock on Findchips.com

    300NS Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    300NS10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NS100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NS120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NS140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NS160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NS20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NS40 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NS60 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NS80 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NSR10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NSR100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NSR120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NSR140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NSR160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NSR20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF
    300NS-R22M TOKO America Fixed Inductors, Inductors, Coils, Chokes, FIXED SMD TYPE 43FS 0.22 UH Original PDF
    300NS-R22M=P2 TOKO INDUCTOR FIX .22UH TYP 43FS SMD Original PDF
    300NS-R27M=P2 TOKO America Fixed Inductors, Inductors, Coils, Chokes, FIXED SMD TYPE 43FS 0.27 UH Original PDF
    300NS-R39M=P2 TOKO America Fixed Inductors, Inductors, Coils, Chokes, INDUCTOR FIX .39UH TYP 43FS SMD Original PDF
    300NSR40 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=300A Original PDF

    300NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    welding inverter 100A

    Abstract: E76102 TERMINAL M5 FRD100CA120 inverter welding dc inverter welding FDS100CA100 FRD100CA100 welding inverter dc to ac IF100A-di
    Text: DIODE MODULE F.R.D. FRD100CA100/120 UL;E76102 M FRD100CA is a high speed dual diode module designed for high power switching application. FRD100CA is suitable for high frequency application requiring low loss and high speed control. High Speed trr 300ns IF AV 100A each device


    Original     		PDF FRD100CA100/120 E76102 FRD100CA 300ns FRD100CA120 FRD100CA100 FDS100CA100/120 welding inverter 100A TERMINAL M5 FRD100CA120 inverter welding dc inverter welding FDS100CA100 FRD100CA100 welding inverter dc to ac IF100A-di

    Untitled

    Abstract: No abstract text available
    Text: WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES  Read Access Times of 125, 140, 150, 200, 250, 300ns  Page Write Cycle Time 10ms Max.  JEDEC Approved Packages  Data Polling for End of Write Detection  Hardware and Software Data Protection


    Original     		PDF WME128K8-XXX 128Kx8 300ns MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: MMBV3700 SURFACE MOUNT PIN DIODE VOLTAGE 200 Volt POWER 200 mW 0.006 0.15 MIN. FEATURES 0.120(3.04) • High reverse breakdown voltage (200V min) 0.110(2.80) • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical)


    Original     		PDF MMBV3700 100MHz 300ns 2011/65/EU IEC61249 2014-REV

    32N12

    Abstract: 32N120P
    Text: Preliminary Technical Information PolarTM HiPerFETTM Power MOSFET IXFL32N120P VDSS ID25 RDS on trr ( Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM Symbol Test Conditions


    Original     		PDF IXFL32N120P 300ns 100ms 32N120P 1-22-10-C 32N12

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFL40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1100V 21A Ω 280mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF 40N110P

    WME128K8-XXX

    Abstract: No abstract text available
    Text: White Electronic Designs WME128K8-XXX 128Kx8 CMOS MONOLITHIC EEPROM, SMD 5962-96796 FEATURES Read Access Times of 120, 140, 150, 200, 250, 300ns Automatic Page Write Operation JEDEC Approved Packages • Internal Control Timer • 32 pin, Hermetic Ceramic, 0.600" DIP


    Original     		PDF WME128K8-XXX 128Kx8 300ns MIL-STD-883 120ns 06HYX 01HXX 250ns 02HXX WME128K8-XXX

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarTM Power MOSFET HiPerFETTM IXFL32N120P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 1200V 24A Ω 340mΩ 300ns ISOPLUS i5-PakTM (HV) Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF IXFL32N120P 300ns 338B2

    JANTXV2N3749

    Abstract: LM 3041
    Text: P O W F P T R A N Ç R T O P Ç r ; / îw rî !?« Ja n , j a n t x , & j a n t x v 2N2880 JAN- JANTX, & JANTXV 2N3749 5 Amp, 80V, Planar, NPN FEATURES • Meets MIL-S-19500/315 • Collector-Base Voltage: 110V • Fast Switching: tr t, = 300nSec max • Low Saturation Voltage: 0.25V max @ 1A


    OCR Scan     		PDF 2N2880 2N3749 MIL-S-19500/315 300nSec 80eed 100mA JANTXV2N3749 LM 3041

    sec c 2335

    Abstract: ic 74126 347 htl AM6070 AM6070DC Voice encryption AM2502 74375
    Text: Am6070 C o m pa n d ing D-to-A Converter for C o n tro l S y s t e m s Distinctive Characteristics • Tested to /¿-255 com panding law • Absolute accuracy specified - includes all errors over tem perature range • Settling tim e 300ns typical • Ideal for m ultiplexed PCM , audio, and 8-bit ¡¿-P


    OCR Scan     		PDF Am6070 300ns 12-bit DAC-76 Am6070 72espective sec c 2335 ic 74126 347 htl AM6070DC Voice encryption AM2502 74375

    AM9101

    Abstract: P2101 am2101 AM9101CPC AM9101PC AM9101ADC AM9101BPC l01a #500 P2101-1 9101C
    Text: Am9101/Am91L01/Am2101 FAMILY 256x4 Static R /W Random A cce ss Memories PART NUMBER Am2101 Am2101-2 Am 9l01 A Am91 L01A Am2101 -1 Am 9101B Am 91L01ß Am9101C Am91 L01C Am 9101D A CCESS TIME 1000ns 650ns 500ns 400ns 300ns 250ns D IS T IN C T IV E C H A R A C T E R I S T I C S


    OCR Scan     		PDF Am9101/Am91L01/Am2101 256x4 Am2101 Am2101-2 500ns 9101B 91L01ß Am9101C 300ns AM9101 P2101 AM9101CPC AM9101PC AM9101ADC AM9101BPC l01a #500 P2101-1 9101C

    23c128

    Abstract: No abstract text available
    Text: HUALON MICROELECTRONICS mm E4E D • 45^8041 000004^ t. HM23C128/A 16K X 8 MASK ROM Features * * * * * * * * EPROM pin compatible. 16,384 x 8 bit organization. Single +5 Volt Supply. Access Time -200/300ns Max. Totally static operation. Completely TTL compatible.


    OCR Scan     		PDF HM23C128/A -200/300ns 23C128 23C128A HM23C128 HM23C128A 23c128

    Untitled

    Abstract: No abstract text available
    Text: HUALON MICROELECTRONICS m#r"i 4STSD41 D000D47 2 • ~T~~Li 54 E D HM23C33 4 K X 8 M ASK ROM iijt,isSii Features * * * * * * * * Access time 200/300ns Max. Single +5V power supply. TTL compatible inputs and outputs. Three-state outputs. Pin compatible with 2732 EPROM.


    OCR Scan     		PDF 4STSD41 D000D47 HM23C33 200/300ns 23C33 CS1/C51 CS2/C32

    Untitled

    Abstract: No abstract text available
    Text: HUALON MICROELECTRONICS E4E D MSTflOMl 000004b □ • HM23C32 4K x 8 MASK ROM : !: a Features * * * * * * * * Access time 200/300ns Max. Single +5V power supply. TTL compatible inputs and outputs. Three-state outputs. Pin compatible with 2532 EPROM. Two programmable chip selects for output control,


    OCR Scan     		PDF 000004b HM23C32 200/300ns 23C32

    Untitled

    Abstract: No abstract text available
    Text: HUALON MICROELECTRONICS m ir i 24E D • 45^8041 □□□0046 4 ■ -jg-j9 HM23C66/A M*=S=m 8K x 8 MASK ROM Features * * * * * * * * 2,764 EPROM pin compatible. 8,192 x 8 bit organization. Single +5 Volt Supply. Access Time -200/300ns Max. Totally static operation.


    OCR Scan     		PDF HM23C66/A -200/300ns 23C66 23C66A

    Untitled

    Abstract: No abstract text available
    Text: FMMT2369 FMMT2369A t0 N CIRCUIT 270Q 3V i 3K3Í2 < Pulse width t1 =300ns Duty cycle = 2% t0 FF CIRCUIT Duty cycle = 2% STORAGE TEST CIRCUIT Duty cycle = 2% * Total shunt capacitance of test jig and connectors 3-69 Cg<4pF4 FMMT2369 | FMMT2369A SOT23 NPN SILICON PLANAR


    OCR Scan     		PDF FMMT2369 FMMT2369A 300ns FMMT2369R FMMTA2369A FMMTA2369AR FMMT2369 10iiA,

    Untitled

    Abstract: No abstract text available
    Text: WPE128K8-XXX I/VHITE / M I C R O E L E C T R O N I C S 128Kx8 PLASTIC PLUS EEPROM ADVANCED* FEATURES • Burn-in and Temperature Cycling Available ■ Read Access Times of 150, 200, 250 and 300nS ■ Write Endurance 10,000 Cycles ■ Data Retention at 25°C, 10 Years


    OCR Scan     		PDF WPE128K8-XXX 128Kx8 300nS

    Untitled

    Abstract: No abstract text available
    Text: Am6073 Companding D-to-A Converter for PCM Communication Systems Distinctive Characteristics • • • • • • • • Tested to CCITT A-law tracking specification • Absolute accuracy specified - includes all errors over temperature range • Settling time 300ns typical


    OCR Scan     		PDF Am6073 300ns DAC-87 Am6073

    XL2804A-250

    Abstract: XL2804A-300 XL2804A-350 XL2804A-450 XL2804A 16L06
    Text: EXEL - XL2804A MICROELECTRONICS, INC. . 512 X 8 Electrically Erasable P R O M PIN CONFIGURATION FEATURES • Fast Read Access Times — 250ns, 300ns, 350ns, 450ns 24 Pin PDIP Type "P" Package J ■ 5 Volt-only Operation


    OCR Scan     		PDF 250ns, 300ns, 350ns, 450ns 100pF) 100pF XL2804A XL2804A-250 XL2804A-300 XL2804A-350 XL2804A-450 XL2804A 16L06

    DFF50B12

    Abstract: DFF20B12 DFD05TR DFG1C8 DFC15TN DFC15TR DFD05TB DFD05TC DFD05TE DFF50B
    Text: Vrkm V 1 20 140 140 140 140 70 70 70 60 150 150 j 150 j 150 j m TCC) m$ I f (A) 1200 1500 100 200 1000 1200 400 600 800 1500 1700 100 200 400 600 800 1000 1000 1200 1000 1200 800 100 200 100 200 400 600 800 400 1000 600 800 600 800 i , 1 TCC) trr<300ns trr<300ns


    OCR Scan     		PDF DFC15TN 300ns DFC15TR DFD05TB 150ns DFD05TC DFD05TE DFF50B12 DFF20B12 DFD05TR DFG1C8 DFC15TN DFD05TC DFF50B

    SHA-2A

    Abstract: AC1035 Circuit switch control unity infinite sample&hold sha2a
    Text: ANALOG ► DEVICES FEATURES ±10V Range 10ns Aperture Delay %ns Aperture Jitter 300ns Settling Time 0.01% Linearity Error Complete with Input Buffer Very High Speed 12 Bit Sample-and-Hold Amplifier SPECIFICATIONS typical +25°Canti il5V dc unless othtrwis* noted


    OCR Scan     		PDF 300ns SHA-2A AC1035 Circuit switch control unity infinite sample&hold sha2a

    ram 8108

    Abstract: 8108-5CD EMM 8108
    Text: SEMI 8108 300NSEC, STATIC, T TL IN /O U T1024 X 8 N-MOS RAM SEMI 8108 500NSEC, STATIC, TTL IN /O U T 1024 X 8 N-MOS RAM FE A T U R E S G E N E R A L D E S C R IP TIO N • 1024 w o rd s X 8 bits EM M S E M I'S 8 1 0 8 is a 8 1 9 2 -b it sta tic R A M , ■


    OCR Scan     		PDF 300NSEC, T1024 500NSEC, ram 8108 8108-5CD EMM 8108

    R09128

    Abstract: R09128B
    Text: »I N i K A l IN S I K U M l N I R09128B/C/D PRELIMINARY INFORMATION 131,072 Bit Static Read Only Memory READ ONLY M EM O R Y I FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 16,384 x 8 Organization Single + 5 Volt S upply 450ns Max Access Tim e: R09128B 300ns Max Access Time: R09128C


    OCR Scan     		PDF R09128B/C/D 450ns R09128B 300ns R09128C 200ns R09128D R09128 R09128B

    CMOS+4068

    Abstract: No abstract text available
    Text: ITTELEDi'NE PHILBRICK 4068 Monolithic 12 Bit, High Speed D/A Converter The 4068 is a monolithic, current-output 12 bit D/A con­ verter that combines high speed settling and true 12 bit performance on a single chip. A full 5mA output step settles to ±0.01%FSR ± V2 LSB in 300nsec typical,


    OCR Scan     		PDF 300nsec 400nsec 10ppm/Â CMOS+4068

    Untitled

    Abstract: No abstract text available
    Text: FRD100CA100/120 DIODE MODULE f.r.d UL;E76102(M) FRD1OOCA is a high speed dual diode module designed for high power switching application. FRD 10OCA is suitable for high frequency application requiring low loss and high speed control. • High Speed tr r S 300ns


    OCR Scan     		PDF FRD100CA100/120 E76102 10OCA 300ns DDD20S3