Untitled
Abstract: No abstract text available
Text: MMBV3700 SURFACE MOUNT PIN DIODE VOLTAGE 200 Volt POWER 200 mW 0.006 0.15 MIN. FEATURES 0.120(3.04) • High reverse breakdown voltage (200V min) 0.110(2.80) • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical)
|
Original
|
PDF
|
MMBV3700
100MHz
300ns
2011/65/EU
IEC61249
2014-REV
|
MMBV3700LT1G
Abstract: MMBV3700LT1 MPN3700 MPN3700G
Text: MMBV3700LT1, MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for
|
Original
|
PDF
|
MMBV3700LT1,
MPN3700
OT-23
MMBV3700LT1/D
MMBV3700LT1G
MMBV3700LT1
MPN3700
MPN3700G
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a
|
Original
|
PDF
|
MMBV3700LT1/D
MMBV3700LT1
MPN3700
MMBV3700LT1/D
|
Untitled
Abstract: No abstract text available
Text: Silicon Pin Diode MMBV3700LT1 These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for economical, high–volume consumer and industrial requirements. They
|
Original
|
PDF
|
MMBV3700LT1
236AB)
25Vdc
|
Untitled
Abstract: No abstract text available
Text: MMBV3700 SURFACE MOUNT PIN DIODE 200 Volts POWER SOT-23 200 mW Unit：inch mm • High reverse breakdown voltage (200V min) 0.006(0.15)MIN. FEATURES 0.120(3.04) 0.110(2.80) • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical)
|
Original
|
PDF
|
MMBV3700
100MHz
300ns
2002/95/EC
IEC61249
OT-23
OT-23,
RB500V-40
MMBV3700
|
Untitled
Abstract: No abstract text available
Text: MMBV3700LT1G High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for economical, high−volume consumer and industrial requirements.
|
Original
|
PDF
|
MMBV3700LT1G
MMBV3700LT1/D
|
Untitled
Abstract: No abstract text available
Text: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for
|
Original
|
PDF
|
|
MMBV3700LT1
Abstract: MPN3700 motorola MPN3700 SMD310
Text: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a
|
Original
|
PDF
|
MMBV3700LT1/D
MMBV3700LT
MPN3700
MMBV3700LT1
MPN3700 motorola
MPN3700
SMD310
|
MPN3700
Abstract: MMBV3700LT1 SMD310
Text: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for
|
Original
|
PDF
|
MMBV3700LT1
MPN3700
r14525
MMBV3700LT1D
MPN3700
MMBV3700LT1
SMD310
|
MMBV3700
Abstract: No abstract text available
Text: MMBV3700 SURFACE MOUNT PIN DIODE VOLTAGE 200 Volts POWER 200 mW FEATURES • High reverse breakdown voltage 200V min • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical) • Low capacitance (0.5 pF typical @V R=20V)
|
Original
|
PDF
|
MMBV3700
100MHz
300ns
2002/95/EC
OT-23,
MIL-STD-750,
MMBV3700
|
MMBV3700LT1
Abstract: MPN3700 SMD310
Text: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for
|
Original
|
PDF
|
MMBV3700LT1
MPN3700
236AB)
r14525
MMBV3700LT1/D
MMBV3700LT1
MPN3700
SMD310
|
MMBV3700LT1G
Abstract: marking 4r
Text: MMBV3700LT1G High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general−purpose switching circuits. They are supplied in a cost−effective plastic package for economical, high−volume consumer and industrial requirements.
|
Original
|
PDF
|
MMBV3700LT1G
OT-23
MMBV3700LT1/D
MMBV3700LT1G
marking 4r
|
MPN3700
Abstract: diode MMBV3700LT1 R 2.8 diode MMBV3700LT1 Diode marking 4R
Text: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode MMBV3700LT1 These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for
|
Original
|
PDF
|
MMBV3700LT1
236AB)
25Vdc
MPN3700
diode MMBV3700LT1
R 2.8 diode
MMBV3700LT1
Diode marking 4R
|
Untitled
Abstract: No abstract text available
Text: ON Semiconductort MMBV3700LT1 MPN3700 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general–purpose switching circuits. They are supplied in a cost–effective plastic package for
|
Original
|
PDF
|
MMBV3700LT1
MPN3700
|
|
|
MMBV3700LT1
Abstract: MMBV3700LT1G
Text: MMBV3700LT1 High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a cost-effective plastic package for economical, high-volume consumer and industrial requirements.
|
Original
|
PDF
|
MMBV3700LT1
OT-23
MMBV3700LT1/D
MMBV3700LT1
MMBV3700LT1G
|
MMBV3700
Abstract: No abstract text available
Text: MMBV3700 SURFACE MOUNT PIN DIODE VOLTAGE 200 Volts POWER 200 mW SOT- 23 Unit: inch mm FEATURES .007(.20)MIN .103(2.60) .056(1.40) .047(1.20) • Very low series resistance at 100MHz (0.7Ω typical@ I F=10mA) • Long minority carrier lifetime (Trr=300ns typical)
|
Original
|
PDF
|
MMBV3700
100MHz
300ns
OT-23,
MMBV3700
|
MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
|
Original
|
PDF
|
SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a
|
OCR Scan
|
PDF
|
MMBV3700LT1/D
MMBV3700LT
MPN3700
200IMUM.
T0-226AC)
b3b72SS
|
U08C
Abstract: G016 CASE318-07
Text: MOTOROLA SEMICONDUCTOR MMBV3700L MPN3700 TECHNICAL DATA SILICON PIN SWITCHING DIODES HIGH VOLTAGE SILICON PIN DIODES . . . d e s ig n e d p rim a rily fo r V H F b an d sw itch in g a p p licatio n s but also su ita b le fo r use in g e n e ra l-p u rp o s e sw itch in g and a tte n u a to r
|
OCR Scan
|
PDF
|
MMBV3700L
MPN3700
U08C
G016
CASE318-07
|
sca marking
Abstract: No abstract text available
Text: HIGH VOLTAGE SILICON PIN DIODES MMBV3700LT1 MPN3700 . . . d e s ig n e d p rim a rily fo r VH F b an d sw itch in g ap p licatio n s but also su itab le fo r use in g en e ra l-p u rp o s e sw itch in g circuits. S u p p lie d in a cost effe ctive plastic p ackage fo r eco n o m ic a l, h ig h -v o lu m e c o n s u m e r and industrial
|
OCR Scan
|
PDF
|
MMBV3700LT1
MPN3700
OT-23
sca marking
|
Untitled
Abstract: No abstract text available
Text: HIGH VOLTAGE SILICON PIN DIODES MMBV3700LT1 MPN3700 . . . designed prim arily for VHF band switching applications but also suitable for use in general-purpose switching circuits. Supplied in a cost effective plastic package for econom ical, high-volum e consum er and industrial
|
OCR Scan
|
PDF
|
MMBV3700LT1
MPN3700
OT-23
O-236AB)
MPN3700
|
DIODE MOTOROLA 33A
Abstract: No abstract text available
Text: MOTOROLA SC OIODES/OPTOJ SÏ ÏF lt3 t.7 2 S S DDSSItS B f - OT - I $ I MMBV3700 MMBV3700L M OTOROLA SEMICONDUCTORS P.O. BOX 20912 • PHOENIX, ARIZONA 85036 SILICON PIN SWITCHING DIODE HIGH VOLTAGE SILICON PIN DIODE M M BV3700 • ” •"1 ' r - . . . designed primarily for VHF band switching applications but also
|
OCR Scan
|
PDF
|
MMBV3700
MMBV3700L
BV3700
OT-23
DIODE MOTOROLA 33A
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a
|
OCR Scan
|
PDF
|
MMBV3700LT1/D
MMBV3700LT
MPN3700
OT-23
3700LT1/D
|
MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
|
OCR Scan
|
PDF
|
06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
|
