Diode B2x
Abstract: diode 6A 1000v E80276 QM300DY-2H Welder
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
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QM300DY-2H
E80276
E80271
Diode B2x
diode 6A 1000v
E80276
QM300DY-2H
Welder
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E80276
Abstract: QM300DY-2HB
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2HB • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750
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QM300DY-2HB
E80276
E80271
E80276
QM300DY-2HB
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QM300HA-2H
Abstract: 1000V 20A transistor QM300HA-2H equivalent E80276 9303C
Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300HA-2H • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75
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QM300HA-2H
E80276
E80271
108MAX.
62MAX.
36MAX.
QM300HA-2H
1000V 20A transistor
QM300HA-2H equivalent
E80276
9303C
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1N2054
Abstract: 1N2068 1N3735 1N3743 1N4044 1N4056 300U DO-205AB M16 pinch bolt
Text: Bulletin I2039 70/300U R SERIES Stud Version STANDARD RECOVERY DIODES 250A 300A Features Alloy diode Peak reverse voltage up to 1000V Popular series for rough service Standard JEDEC types Stud cathode and stud anode version Typical Applications Welders Power supplies
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I2039
70/300U
DO-205AB
1N2054
1N2068
1N3735
1N3743
1N4044
1N4056
300U
DO-205AB
M16 pinch bolt
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1n2054 diode
Abstract: 1N2054 1N2068 1N3735 1N3743 1N4044 1N4056 300U DO-205AB M16 pinch bolt
Text: Previous Datasheet Index Next Data Bulletin SheetI2039 70/300U R SERIES Stud Version STANDARD RECOVERY DIODES 250A 300A Features Alloy diode Peak reverse voltage up to 1000V Popular series for rough service Standard JEDEC types Stud cathode and stud anode version
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I2039
70/300U
1n2054 diode
1N2054
1N2068
1N3735
1N3743
1N4044
1N4056
300U
DO-205AB
M16 pinch bolt
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1N2054
Abstract: 1N2068 1N3735 1N3743 1N4044 1N4056 300U DO-205AB ir 70u 1N405
Text: Bulletin I2039 11/94 70/300U R SERIES Stud Version STANDARD RECOVERY DIODES 250A 300A Features Alloy diode Peak reverse voltage up to 1000V Popular series for rough service Standard JEDEC types Stud cathode and stud anode version Typical Applications Welders
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I2039
70/300U
DO-205AB
R4500
1N2054
1N2068
1N3735
1N3743
1N4044
1N4056
300U
DO-205AB
ir 70u
1N405
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6550
Abstract: 1N2054 1N2068 1N3735 1N3743 1N4044 1N4056 300U DO-205AB DIODE 300U 120 C
Text: Bulletin I2039 11/94 70/300U R SERIES Stud Version STANDARD RECOVERY DIODES 250A 300A Features Alloy diode Peak reverse voltage up to 1000V Popular series for rough service Standard JEDEC types Stud cathode and stud anode version Typical Applications Welders
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I2039
70/300U
DO-205AB
6550
1N2054
1N2068
1N3735
1N3743
1N4044
1N4056
300U
DO-205AB
DIODE 300U 120 C
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DCR840F
Abstract: DCR840F42 DCR840F44 DCR840F46 DCR840F48
Text: DCR840F DCR840F Phase Control Thyristor Preliminary Information DS5521-1.1 February 2002 FEATURES KEY PARAMETERS • Double Side Cooling VDRM 4800V ■ High Surge Capability IT AV 840A ITSM 10,000A dVdt* 1000V/µs dI/dt 300A/µs ■ Low Turn-on Losses APPLICATIONS
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DCR840F
DS5521-1
DCR840F48
DCR840F46
DCR840F44
DCR840F42
100mA,
DCR840F
DCR840F42
DCR840F44
DCR840F46
DCR840F48
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transistor 1000V 6A
Abstract: diode 6A 1000v E76102 SQD300AA100 transistor VCE 1000V Ultrasonic moter application transistor 1000V high current darlington transistor SQD300AA120 M6 transistor
Text: TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
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SQD300AA100
E76102
SQD300AA100
SQD300AA120
transistor 1000V 6A
diode 6A 1000v
transistor VCE 1000V
Ultrasonic moter application
transistor 1000V
high current darlington transistor
SQD300AA120
M6 transistor
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Untitled
Abstract: No abstract text available
Text: CM300DX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT NX-Series Module 300 Amperes/1700 Volts A D E F H J K AK AL AG G Y L 8 9 AQ AJ T M 10 AB (4 PLACES) U N AF (4 PLACES) S AP DETAIL "A" 1 V 2 3
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CM300DX-34SA
Amperes/1700
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Untitled
Abstract: No abstract text available
Text: CM300DX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT NX-Series Module 300 Amperes/1700 Volts H A D E F J K AK AL AG G Y L 8 9 AJ T M N 10 AB (4 PLACES) U AF (4 PLACES) S AP DETAIL "A" 1 V W R AM
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CM300DX-34SA
Amperes/1700
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Untitled
Abstract: No abstract text available
Text: CM300DX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT NX-Series Module 300 Amperes/1700 Volts H A D E F J K AK AL AG G Y L 9 8 AJ T M N 10 AB (4 PLACES) U AF (4 PLACES) S AP DETAIL "A" 1 V W R AM
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CM300DX-34SA
Amperes/1700
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Untitled
Abstract: No abstract text available
Text: CM300DX-34SA Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBT NX-Series Module 300 Amperes/1700 Volts H A D E F J K G AZ L AK AL AG Y 9 8 AJ T M N 10 AB (4 PLACES) U AF (4 PLACES) S AP 11 DETAIL "A" 1 V
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CM300DX-34SA
Amperes/1700
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S20L
Abstract: S30L SD1053C sd1053c.s20l 100a 1000v GTO
Text: Bulletin I2079 rev.A 09/97 SD1053C.L SERIES Hockey Puk Version FAST RECOVERY DIODES Features 920A 1050A High power FAST recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 3000V High current capability Optimized turn on and turn off characteristics
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I2079
SD1053C.
DO-200AB
000V/us
000V/us,
00A/us
S20L
S30L
SD1053C
sd1053c.s20l
100a 1000v GTO
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2H lc Collector current. 300A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized
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QM300DY-2H
E80276
E80271
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G016
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES ; QM300DY-2HB ! HIGH POWER SWITCHING USE INSULATED TYPE QM 300DY-2HB { •1C Collector current. 300A • V cex Collector-emitter voltage.1000V • hFE DC current gain. 750 • Insulated Type
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QM300DY-2HB
300DY-2HB
E80276
E80271
G016
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300HA-2H HIGH POWER SWITCHING USE INSULATED TYPE Q M 300H A-2H lc Collector current. 300A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized
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QM300HA-2H
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE Q M 300DY-2HB • lc Collector current. 300A • Vcex Collector-emitter vo ltag e 1000V • hFE DC current gain. 750 • Insulated Type
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QM300DY-2HB
300DY-2HB
E80276
E80271
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Untitled
Abstract: No abstract text available
Text: Bulletin 12039 International [K?RjRectifier 70/30ûu R s e rie s STANDARD RECOVERY DIODES Stud Version 250A 300A Features • ■ Alloy diode Peak reverse voltage up to 1000V ■ Popular series for rough service ■ Standard JEDEC types ■ Stud cathode and stud anode version
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002bflbB
70/300U
4A5545E
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1N2054
Abstract: ir 70u KYW 30 40 diode
Text: Bulletin 12039 International [ïor 70/300U R s e rie s Rectifier STANDARD RECOVERY DIODES Stud Version 250A 300A Features • Alloy diode ■ P e a k reverse voltage up to 1000V ■ P op ular series for rough service ■ S tan dard J E D E C types ■ Stud cathode and stud anode version
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70/300U
1N2054
ir 70u
KYW 30 40 diode
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Untitled
Abstract: No abstract text available
Text: « RURP3070, RURP3080, RURP3090, RURP30100 ¡11995 30A, 700V - 1000V U ltrafast Diodes Features Package • Ultrafast with Soft Recovery Characteristic tRR< 110ns JEDEC TQ-220AC ANODE CATHODE • +175°C Rated Junction Temperature CATHODE (FLANGE) • Reverse Voltage Up to 1000V
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RURP3070,
RURP3080,
RURP3090,
RURP30100
110ns)
TQ-220AC
RURP30100
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RURP3080
Abstract: transistor 1000V RURP30100
Text: « H a r r is RURP3070, RURP3080 uu — RURP3090, RURP30100 Decem ber 1993 30A, 700V - 1 000V Ultrafast Diodes Package Features JE D E C TO-220AC TOP VIEW • Ultrafast with Soft Recovery Characteristic tRR< 110ns • +175°C Rated Junction Temperature • Reverse Voltage Up to 1000V
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RURP3070,
RURP3080
RURP3090,
RURP30100
110ns)
O-220AC
P3070,
P3080,
transistor 1000V
RURP30100
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30100 transistor
Abstract: RURP3080
Text: < X | % ms h a r r RURP3070, RURP3080, RURP3090, RURP30100 i s „ . . c o n - u c t o . 30A, 700V - 1000V Ultrafast Diodes April 1 9 9 5 Features Package • Ultrafast with Soft Recovery Characteristic *rr < 110ns JE D E C TO-22QAC ANODE CATHODE • +175°C Rated Junction Temperature
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RURP3070,
RURP3080,
RURP3090,
RURP30100
O-22QAC
110ns)
RURP30100
30100 transistor
RURP3080
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RUR30100
Abstract: rur30100 Diode 30a 1000v RUR3070 RUR3080 RUR3090 VRWM-700V
Text: RUR3070/30Q0, B U R 3090/30100 HARRIS HARRIS SEMICOND SECTOR 5bE D • 43D2271 00423^5 511 I HAS May 1992 Features 30A Ultrafast Diode With Soft Recovery Characteristic Package 3 - / 7 T0-220AC • Ultrafast with Soft Recovery Characteristic {tfr < 110ns
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43D2571
110ns)
RUR3070,
RUR3080,
RUR3090,
RUR30100
RUR3080.
RUR3090RUR30100
rur30100 Diode
30a 1000v
RUR3070
RUR3080
RUR3090
VRWM-700V
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