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    300 W NPN DARLINGTON POWER TRANSISTORS Search Results

    300 W NPN DARLINGTON POWER TRANSISTORS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    300 W NPN DARLINGTON POWER TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPK1250 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)300 I(C) Max. (A)200 Absolute Max. Power Diss. (W)600 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.500


    Original     		PDF SPK1250

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    Abstract: No abstract text available
    Text: MJH6284 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)160 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300


    Original     		PDF MJH6284

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    Text: DA11503008 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)500 V(BR)CBO (V) I(C) Max. (A)300 Absolute Max. Power Diss. (W)1.6k Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m¶ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.80


    Original     		PDF DA11503008

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    Abstract: No abstract text available
    Text: PMD25K120 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)9.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0mØ» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300


    Original     		PDF PMD25K120 time300n

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    Abstract: No abstract text available
    Text: BU931ZP Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300


    Original     		PDF BU931ZP

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    Text: BU931ZT Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300


    Original     		PDF BU931ZT

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    Abstract: No abstract text available
    Text: BU931Z Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300


    Original     		PDF BU931Z

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    Text: BU931ZTFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300


    Original     		PDF BU931ZTFI

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    Text: BU931 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300


    Original     		PDF BU931

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    Abstract: No abstract text available
    Text: BU931ZPFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300


    Original     		PDF BU931ZPFI

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    Abstract: No abstract text available
    Text: PMD25K150 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)9.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)5.0mØ» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300


    Original     		PDF PMD25K150 time300n

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    Abstract: No abstract text available
    Text: BU931ZSM Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)350 h(FE) Min. Current gain.300


    Original     		PDF BU931ZSM

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    Abstract: No abstract text available
    Text: BU931SM Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125# Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300


    Original     		PDF BU931SM

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    Abstract: No abstract text available
    Text: BU931T Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)125# Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300


    Original     		PDF BU931T

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    Text: BU931P Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)15 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300


    Original     		PDF BU931P

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    Abstract: No abstract text available
    Text: MJ11028 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)2.0m» @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k


    Original     		PDF MJ11028

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    Abstract: No abstract text available
    Text: 2SD1909 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)500 I(C) Max. (A)6 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)400 h(FE) Min. Current gain.200


    Original     		PDF 2SD1909 Freq20MÃ

    Untitled

    Abstract: No abstract text available
    Text: BU931TFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)10 Absolute Max. Power Diss. (W)40# Maximum Operating Temp (øC)150 I(CBO) Max. (A)250ux @V(CBO) (V) (Test Condition)450 h(FE) Min. Current gain.300


    Original     		PDF BU931TFI

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    Abstract: No abstract text available
    Text: BU931RPFI Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)400 V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.


    Original     		PDF BU931RPFI

    Untitled

    Abstract: No abstract text available
    Text: 2SD1592 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)300 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.400 h(FE) Max. Current gain.3.0k


    Original     		PDF 2SD1592

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    Abstract: No abstract text available
    Text: MJH6282 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)20 Absolute Max. Power Diss. (W)160 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.2.0k


    Original     		PDF MJH6282

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    Abstract: No abstract text available
    Text: MJH6283 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)20 Absolute Max. Power Diss. (W)160 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.300 h(FE) Max. Current gain.2.0k


    Original     		PDF MJH6283

    mj150* darlington

    Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
    Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35


    Original     		PDF 2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943