30 pin simm
Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
Text: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM
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KMM58256CN
KMM59256CN
KMM532256CV/CVG
KMM536256C/CG
KMM32512CV/CVG
KMM536512C/CG
KMM536512CH
KMM540512C/CG'
KMM540512CM
KMM581000C
30 pin simm
30-pin SIMM RAM
30 pin simm memory
256KX8 SIMM
512KX40
1 x 32 72-pin SIMM
KMM581020BN
72 simm function
KMM5362000
30-pin SIMM
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30-pin simm memory "16m x 8"
Abstract: No abstract text available
Text: STI916100 30-PIN SIMMS 1 6 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI916100 is a 16M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI916100 consist of nine CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A
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OCR Scan
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STI916100
30-PIN
STI916100
24-pin
STI916100-xxT)
STI916100-xxG)
30-pin simm memory "16m x 8"
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30-pin simm memory "16m x 8"
Abstract: 30-pin simm memory 30-pin SIMM RAM
Text: 30-PIN SIMMS STI816100 16M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI816100 is a 16M bit x 8 Dynamic RAM high density memory module. The Simple Technology STI816100 consist of eight CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A
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OCR Scan
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STI816100
30-PIN
STI816100
24-pin
STI816100-xxT)
STI816100-xxG)
30-pin simm memory "16m x 8"
30-pin simm memory
30-pin SIMM RAM
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Untitled
Abstract: No abstract text available
Text: STI84000A 30-PIN SIMMS 4M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI84000A is a 4M bii: x 8 Dynamic RAM high density memory module. The Simple Technology STI84000A consist of two CMOS 4M x 4 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A 0.1 ^F
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OCR Scan
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STI84000A
STI84000A-60
STI84000A-70
STI84000A-80
110ns
130ns
150ns
30-PIN
STI84000A
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Untitled
Abstract: No abstract text available
Text: 30-PIN SIMMS STI91000 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000 is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91000 consist of nine CMOS 1M x 1 DRAMs in 20-pin SOJ package
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OCR Scan
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STI91000
STI91000-60
STI91000-70
STI91000-80
110ns
130ns
150ns
30-PIN
STI91000
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PDF
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30-pin SIMM RAM
Abstract: No abstract text available
Text: STI94000 30-PIN SIMMS 4M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI94000 is a 4M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI94000 consist of nine CMOS 4 M x 1 DRAMs in 20-pin SOJ package
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OCR Scan
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STI94000
30-PIN
110ns
130ns
150ns
STI94000
20-pin
30-pin SIMM RAM
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PDF
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SIMM 30-pin
Abstract: No abstract text available
Text: MC-424100A8 4,194,304 X 8-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Description Pin Configurations The MC-424100A8 is a fast-page 4,194,304-word by 8-bit 30-Pin Leaded SIMM dynam ic RAM module designed to operate from a single + 5-volt power supply. Advanced CMOS cir
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OCR Scan
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MC-424100A8
304-word
uPD424100
30-Pin
MC-424100A8
SIMM 30-pin
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PDF
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EADS-80
Abstract: No abstract text available
Text: TM4100EAD9 4194304 BY 9-BIT DYNAMIC RAM MODULE SMMS419C - NOVEMBER 1991 - REVISED JUNE 1995 Organization . . . 4194304 x 9 SINGLE IN-LINE MODULE Single 5-V Power Supply ±10% Tolerance (TOP VIEW) 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets
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OCR Scan
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TM4100EAD9
SMMS419C
30-Pin
4100EAD9-60
4100EAD9-70
4100EAD9-80
EADS-80
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KMM591000C8
Abstract: KMM591000C KMM591000C7 KMM591000C-7
Text: KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000C is a 1M b itx 9 Dynamic RAM high density memory module. The Samsung KMM591000C consist of nine KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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OCR Scan
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KMM591000C
110ns
130ns
150ns
KMM591000C
KM41C1000C
20-pin
30-pin
KMM591000C8
KMM591000C7
KMM591000C-7
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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OCR Scan
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KMM594000A
130ns
150ns
180ns
KMM594000A
30-pin
KM41C4000AJ
20-pin
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PDF
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Samsung Capacitor sms
Abstract: km41c4000aj KM41C4000A
Text: D3AM MODULES KMM59400QA 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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OCR Scan
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KMM59400QA
KMM594000A
KM41C4000AJ
20-pin
30-pin
KMM594000A-
Samsung Capacitor sms
KM41C4000A
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PDF
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KMM584000A
Abstract: km41c4000aj
Text: KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KMM584000A consist of eight KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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OCR Scan
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KMM584000A
KMM584000A
KM41C4000AJ
20-pin
30-pin
KMM584000A-
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM581000C DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000C is a 1M b it x 8 Dynamic RAM high density memory module. The Samsung KMM581000C consist of eight KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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OCR Scan
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KMM581000C
KMM581000C-6
KMM581000C-7
KMM581000C-8
110ns
130ns
150ns
KMM581000C
KM41C1000C
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PDF
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Untitled
Abstract: No abstract text available
Text: SM584000 July 1997 Rev 0 SMART Modular Technologies SM584000 4MByte 4M x 8 CMOS DRAM Module General Description Features The SM584000 is a high performance, 4-megabyte dynamic RAM module organized as 4M words by 8 bits, in a 30-pin SIMM package. • •
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Original
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SM584000
30-pin
60/70/80ns
Diagram-9-361-9705
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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OCR Scan
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KMM584000A
84000A-
84000A-10
100ns
130ns
150ns
180ns
84000A
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PDF
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SS1000
Abstract: KMM581000B
Text: KMM581000B DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581OOOB consist of eight KM41C1OOOBJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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OCR Scan
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KMM581000B
581000B
KMM581OOOB
KM41C1OOOBJ
20-pin
30-pin
581000B-
KMM581
SS1000
KMM581000B
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PDF
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333z
Abstract: 333z capacitor 00A80
Text: STI91OOOA 30-PIN SIMMS 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000A is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91 OOOA consist of two CMOS 1M x 4 DRAMs in 20-pin SOJ package and one CMOS 1M x 1 DRAM in 20-pin SOJ package
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OCR Scan
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STI91OOOA
STI91000A-60
STI91000A-70
STI91000A-80
110ns
130ns
150ns
30-PIN
STI91000A
STI91
333z
333z capacitor
00A80
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PDF
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KMM584000
Abstract: KM41C4000J
Text: KM M584000 DRAM MODULES 4 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000 is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung KMM584000 consist of eight KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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OCR Scan
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M584000
KMM584000-8
KMM584000-10
100ns
150ns
180ns
KMM584000
KM41C4000J
20-pin
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PDF
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dram simm memory module samsung 30-pin 16M
Abstract: No abstract text available
Text: KMM5916100/T DRAM MODULES 16Mx9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59161QG/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung «1^5916100^ consist of nine KM41C16100/T DRAMs in 24-pin SOJ/TSOP II packages mounted on a 30-pin
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OCR Scan
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KMM5916100/T
16Mx9
KMM59161QG/T
KM41C16100/T
24-pin
30-pin
KMM5916100/T
KMM5916100-6
KMM5916100-7
dram simm memory module samsung 30-pin 16M
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PDF
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TM4100GAD8
Abstract: No abstract text available
Text: TM4100GAD8 4194 304 BY 8-BIT DYNAMIC RAM MODULE SMMS508A-MARCH 1992-REVISED JANUARY 1993 * Organization. 4 194 304 x8 * Single 5-V Power Supply ±10% Tolerance * 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets * Utilizes Eight 4-Megabit Dynamic RAMs in
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OCR Scan
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TM4100GAD8
SMMS508A-MARCH
1992-REVISED
30-Pin
4100GAD8-60
410OGAD8-70
4100GAD8-80
1992-REVISEO
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PDF
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MT1257
Abstract: SIMM 30-pin 30 pin simm 30-pin simm memory 30-pin SIMM RAM "30 pin simm" simm 30-pin 9-bit 30 pin simm memory MT82 ia4a5
Text: IICRON vis/ 'TO257M MT9257M TECHNOLOGY, INC. 2805 East Columbia Road Boise, Idaho 83706 TEL. 208 386-3900 TWX 910-970-5973 256K x 8 BIT DYNAMIC RAM 256K x 9 BIT DYNAMIC RAM / n f\ . We're building our reputation on innovation, FEATURES •Industry standard pin out in a 30-pin single-in-line memory module (SIMM)
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OCR Scan
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/ITB257M
MT9257M
30-pin
135mW
1350mW
MT1257
SIMM 30-pin
30 pin simm
30-pin simm memory
30-pin SIMM RAM
"30 pin simm"
simm 30-pin 9-bit
30 pin simm memory
MT82
ia4a5
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PDF
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YL-69
Abstract: No abstract text available
Text: NEC Electronics Inc. MC-421000A9 1,048,576 X 9-Bit Dynamic CMOS RAM Module Description Pin Configurations The M C-421000A9 is a fas t-p a g e 1,048,576-word by 9-bit dynam ic RAM m odule designed to o perate from a single + 5-volt pow er supply. 30-Pin Leaded SIMM MC-421000A9A/AA/AB
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OCR Scan
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MC-421000A9
C-421000A9
576-word
30-Pin
MC-421000A9A/AA/AB)
/JPD421000)
/L/PD424400)
YL-69
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PDF
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SM591000
Abstract: No abstract text available
Text: JUL i r 1593 SM591000 1MByte IM x 9 CMOS DRAM Module General Description Features The SM591000 is a high performance, 1-megabyte dynamic RAM module organized as 1M words by 9 bits, in a 30-pin, leadless, single-in-line memory module (SIMM) package. • •
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OCR Scan
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SM591000
30-pin,
60/70/80ns
60/70/80ns)
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PDF
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MCM91000
Abstract: motorola mcm91000s
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 MCM9L1000 1Mx9 Bit Dynamic Random Access Memory Module The MCM 91000 and MCM9L1000 are 9M dynam ic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single-in-line memory m odules (SIMM) or 30-pin single-in-line packages (SIP)
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OCR Scan
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MCM9L1000
30-lead
30-pin
CM511000A
MCM511000A
9L1000
MCM91000AS70
MCM91000AS00
M91000AS
MCM9L1000AS70
MCM91000
motorola mcm91000s
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