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    30-PIN SIMM MEMORY DYNAMIC Search Results

    30-PIN SIMM MEMORY DYNAMIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet

    30-PIN SIMM MEMORY DYNAMIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30 pin simm

    Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
    Text: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM


    OCR Scan     		PDF KMM58256CN KMM59256CN KMM532256CV/CVG KMM536256C/CG KMM32512CV/CVG KMM536512C/CG KMM536512CH KMM540512C/CG' KMM540512CM KMM581000C 30 pin simm 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM

    30-pin simm memory "16m x 8"

    Abstract: No abstract text available
    Text: STI916100 30-PIN SIMMS 1 6 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI916100 is a 16M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI916100 consist of nine CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A


    OCR Scan     		PDF STI916100 30-PIN STI916100 24-pin STI916100-xxT) STI916100-xxG) 30-pin simm memory "16m x 8"

    30-pin simm memory "16m x 8"

    Abstract: 30-pin simm memory 30-pin SIMM RAM
    Text: 30-PIN SIMMS STI816100 16M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI816100 is a 16M bit x 8 Dynamic RAM high density memory module. The Simple Technology STI816100 consist of eight CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A


    OCR Scan     		PDF STI816100 30-PIN STI816100 24-pin STI816100-xxT) STI816100-xxG) 30-pin simm memory "16m x 8" 30-pin simm memory 30-pin SIMM RAM

    Untitled

    Abstract: No abstract text available
    Text: STI84000A 30-PIN SIMMS 4M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI84000A is a 4M bii: x 8 Dynamic RAM high density memory module. The Simple Technology STI84000A consist of two CMOS 4M x 4 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A 0.1 ^F


    OCR Scan     		PDF STI84000A STI84000A-60 STI84000A-70 STI84000A-80 110ns 130ns 150ns 30-PIN STI84000A

    MCM91000

    Abstract: motorola mcm91000s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 MCM9L1000 1Mx9 Bit Dynamic Random Access Memory Module The MCM 91000 and MCM9L1000 are 9M dynam ic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single-in-line memory m odules (SIMM) or 30-pin single-in-line packages (SIP)


    OCR Scan     		PDF MCM9L1000 30-lead 30-pin CM511000A MCM511000A 9L1000 MCM91000AS70 MCM91000AS00 M91000AS MCM9L1000AS70 MCM91000 motorola mcm91000s

    MCM91000-70

    Abstract: MCM91000SG motorola mcm91000s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 9 Bit Dynamic Random Access Memory Module MCM91000 MCM9L1000 The MCM91000 and MCM9L1000 are 9M dynamic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single­ in-line memory modules (SIMM) or 30-pin single-in-line packages (SIP) consisting of


    OCR Scan     		PDF MCM91000 MCM9L1000 30-lead 30-pin MCM511000A 9L1000 MCM91000L70 MCM91000L80 MCM9L1000L70 MCM91000-70 MCM91000SG motorola mcm91000s

    Untitled

    Abstract: No abstract text available
    Text: 30-PIN SIMMS STI91000 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000 is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91000 consist of nine CMOS 1M x 1 DRAMs in 20-pin SOJ package


    OCR Scan     		PDF STI91000 STI91000-60 STI91000-70 STI91000-80 110ns 130ns 150ns 30-PIN STI91000

    MCM91000SG

    Abstract: 91000S-80 91000S-70 91000LH70
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 1M x 9 Bit Dynamic Random Access Memory Module The MCM91000 is a 9M dynamic random access memory DRAM module or­ ganized as 1,048,576 x 9 bits. The module is a 30-lead single-in-line memory mod­ ule (SIMM) or 30-pin single-in-line package (SIP) consisting of nine MCM511000A


    OCR Scan     		PDF MCM91000 30-lead 30-pin MCM511000A 91000LH70 91000LH80 91000S70 91000S80 MCM91000SG 91000S-80 91000S-70

    mcm91000as

    Abstract: 91000LH70 mcm91000s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 1M x 9 Bit Dynamic Random Access Memory Module The MCM91000 is a 9M dynamic random access memory DRAM module or­ ganized as 1,048,576 x 9 bits. The module is a 30-lead single-in-line memory mod­ ule (SIMM) or 30-pin single-in-line package (SIP) consisting of nine MCM511000A


    OCR Scan     		PDF MCM91000 30-lead 30-pin MCM511000A 91000LH70 91000LH80 91000S70 91000S80 mcm91000as mcm91000s

    30-pin SIMM RAM

    Abstract: No abstract text available
    Text: STI94000 30-PIN SIMMS 4M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI94000 is a 4M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI94000 consist of nine CMOS 4 M x 1 DRAMs in 20-pin SOJ package


    OCR Scan     		PDF STI94000 30-PIN 110ns 130ns 150ns STI94000 20-pin 30-pin SIMM RAM

    KMM591000C8

    Abstract: KMM591000C KMM591000C7 KMM591000C-7
    Text: KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000C is a 1M b itx 9 Dynamic RAM high density memory module. The Samsung KMM591000C consist of nine KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM591000C 110ns 130ns 150ns KMM591000C KM41C1000C 20-pin 30-pin KMM591000C8 KMM591000C7 KMM591000C-7

    Untitled

    Abstract: No abstract text available
    Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM594000A 130ns 150ns 180ns KMM594000A 30-pin KM41C4000AJ 20-pin

    Samsung Capacitor sms

    Abstract: km41c4000aj KM41C4000A
    Text: D3AM MODULES KMM59400QA 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM59400QA KMM594000A KM41C4000AJ 20-pin 30-pin KMM594000A- Samsung Capacitor sms KM41C4000A

    KMM584000A

    Abstract: km41c4000aj
    Text: KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KMM584000A consist of eight KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM584000A KMM584000A KM41C4000AJ 20-pin 30-pin KMM584000A-

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM584000A 84000A- 84000A-10 100ns 130ns 150ns 180ns 84000A

    SS1000

    Abstract: KMM581000B
    Text: KMM581000B DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581OOOB consist of eight KM41C1OOOBJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM581000B 581000B KMM581OOOB KM41C1OOOBJ 20-pin 30-pin 581000B- KMM581 SS1000 KMM581000B

    mcm91000s

    Abstract: motorola 30-pin simm memory dynamic mcm511000 MCM91000L MCM91000-80 simm 30-pin 9-bit MCM91000
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 Product Preview 1 M x 9 Bit Dynam ic Random Access M em ory M odule The MCM91000L and MCM91000S are 9M , dynamic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead singlein-line memory modules (SIMM) or 30*pin single-in-line packages (SIP) consist­


    OCR Scan     		PDF MCM91000 MCM91000L MCM91000S 30-lead MCM511000 MCM91000S MCM91000L motorola 30-pin simm memory dynamic MCM91000-80 simm 30-pin 9-bit MCM91000

    MCM81000AS10

    Abstract: motorola 30-pin simm memory dynamic mcm81000s
    Text: M O TO RO LA SEM ICO NDUCTO R TECHNICAL DATA 1Mx8 Bit Dynamic Random Access Module MCM81000 MCM8L1000 The MCM81000 and M CM8L1000 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bils. The modules are 30-lead single-in-line memory modules (SIMM) or 30-pin single-in-line packages (SIP)


    OCR Scan     		PDF MCM81000 CM8L1000 30-lead 30-pin CM5110OOA MCM511000A 8L1000 MCM81000AS70 MCM81000AS80 MCM81000AS10 motorola 30-pin simm memory dynamic mcm81000s

    KMM584000

    Abstract: KM41C4000J
    Text: KM M584000 DRAM MODULES 4 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000 is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung KMM584000 consist of eight KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF M584000 KMM584000-8 KMM584000-10 100ns 150ns 180ns KMM584000 KM41C4000J 20-pin

    dram simm memory module samsung 30-pin 16M

    Abstract: No abstract text available
    Text: KMM5916100/T DRAM MODULES 16Mx9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59161QG/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung «1^5916100^ consist of nine KM41C16100/T DRAMs in 24-pin SOJ/TSOP II packages mounted on a 30-pin


    OCR Scan     		PDF KMM5916100/T 16Mx9 KMM59161QG/T KM41C16100/T 24-pin 30-pin KMM5916100/T KMM5916100-6 KMM5916100-7 dram simm memory module samsung 30-pin 16M

    333z

    Abstract: 333z capacitor 00A80
    Text: STI91OOOA 30-PIN SIMMS 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000A is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91 OOOA consist of two CMOS 1M x 4 DRAMs in 20-pin SOJ package and one CMOS 1M x 1 DRAM in 20-pin SOJ package


    OCR Scan     		PDF STI91OOOA STI91000A-60 STI91000A-70 STI91000A-80 110ns 130ns 150ns 30-PIN STI91000A STI91 333z 333z capacitor 00A80

    594000A

    Abstract: No abstract text available
    Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 594000A consist of nine KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM594000A 94000A 41C4000AJ 20-pin 30-pin 94000A- 594000A

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy


    OCR Scan     		PDF KMM584000A 84000A 41C4000AJ 20-pin 30-pin 130ns 84000A- 150ns

    Untitled

    Abstract: No abstract text available
    Text: STI94000A 30-PIN SIM M S 4M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology ST I94000A is a 4 M bil x 9 Dynamic R A M high density memory module. The Simple Technology STI94000A consist of two C M O S 4M x 4 D R A M s in 20-pin S O J


    OCR Scan     		PDF STI94000A 30-PIN STI94000A-60 STI94000A-70 STI94000A-80 110ns 130ns 150ns I94000A STI94000A