30N60AU1
Abstract: 30N60U1 IXSH30N60U1
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR
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N60U1
N60AU1
30N60U1
30N60AU1
30N60AU1
30N60U1
IXSH30N60U1
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30n60
Abstract: 30N60A igbt 30N60 30 N60A N60A 30N60U1 IXGH30N60AU1 IXGH30N60A IXGH30N60U1
Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C 50 A I C90
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30N60
30N60A
O-204AE
30N60
30N60A
30N60U1
30N60AU1
igbt 30N60
30 N60A
N60A
IXGH30N60AU1
IXGH30N60A
IXGH30N60U1
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30N60U1
Abstract: 30n60
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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N60U1
N60AU1
30N60U1
30N60AU1
30N60U1
30n60
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30N60
Abstract: 30N60A igbt 30N60 N60A IXYS 30N60 mos 30N60 30N60U1 A2760
Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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O-247
30N60
30N60A
O-204AE
30N60
30N60A
igbt 30N60
N60A
IXYS 30N60
mos 30N60
30N60U1
A2760
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IXGH30N60U1
Abstract: IXGH30N60AU1 30N60U1 n60u1 30N60AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 30 N60U1 IXGH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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N60U1
N60AU1
30N60AU1
30N60U1
IXGH30N60U1
IXGH30N60AU1
30N60U1
n60u1
30N60AU1
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Untitled
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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N60U1
N60AU1
O-247
30N60U1
30N60AU1
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30N60
Abstract: N60A 30N60A igbt 30N60 IXGH30N60U1 30N60U1 IXGH30N60AU1 IXGM30N60A
Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 T C = 25°C 50 A IC90
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Wei60A
30N60
30N60A
O-204AE
30N60
30N60A
30N60U1
N60A
igbt 30N60
IXGH30N60U1
IXGH30N60AU1
IXGM30N60A
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30N60A
Abstract: No abstract text available
Text: Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW
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N60U1
N60AU1
O-247
30N60U1
30N60AU1
30N60A
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20N60A
Abstract: D-68623 20N60U1 20N60AU
Text: Not for new designs Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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N60U1
N60AU1
D-68623
20N60U1
20N60AU1
20N60A
20N60U1
20N60AU
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IXGH20N60AU1
Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient
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N60U1
N60AU1
O-247
IXGH20N60U1
IXGH20N60AU1
IXGH20N60AU1
IXGH20N60U1
20N60AU1
*GH20N60AU1
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40n60 igbt
Abstract: 40n60 40N60A G 40N60 igbt 40n60 equivalent D-68623 igbt equivalent to 40n60
Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VCES I C25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ
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O-247
D-68623
40n60 igbt
40n60
40N60A
G 40N60 igbt
40n60 equivalent
igbt equivalent to 40n60
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40n60 igbt
Abstract: 40n60 IXGH/40n60 igbt 40N60A G40N60a IXGH/IXGM 40 N60A G 40N60 igbt igbt equivalent to 40n60 IXGH40N60 40n60 transistor
Text: Low VCE sat IGBT High speed IGBT IXGH/IXGM 40 N60 IXGH/IXGM 40 N60A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C, limited by leads
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40N60
Abstract: G 40N60 igbt 40n60 igbt 40N60A IC IGBT 40N60 g 40n60 N60A
Text: Low VCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VCES IC25 VCE(sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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O-247
40N60
40N60A
O-204AE
40N60
G 40N60 igbt
40n60 igbt
40N60A
IC IGBT 40N60
g 40n60
N60A
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10N60U1
Abstract: 10n60au1 N60AU1 ixgh 1500
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N60U1 IXGH 10 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ
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N60U1
N60AU1
Moun000
10N60AU1
10N60U1
10N60U1
10n60au1
N60AU1
ixgh 1500
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30n60u
Abstract: 30N60A ixgh30n60a IXGM30N60
Text: L o w V cE s a t IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A High speed IGBT Symbol Test Conditions V y ces Tj = 25°C to 150°C 600 V v CGR ^ 600 V VGES Continuous ±20 V v GEM T ransient ±30 V *C25 Tc = 25°C 50 A ^C90 T0 = 90°C 30 A ^c m Tc = 25°C, 1 ms
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O-247
30N60U1
30N60AU1
4bflb22b
30n60u
30N60A
ixgh30n60a
IXGM30N60
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30n60
Abstract: 1XSH30N60A
Text: lOIXYS lowvcemigbt IXSH/IXSM 30 N60 IXSH/IXSM 30 N60A High Speed IGBT Short Circuit SOA Capability o- Symbol Test Conditions V Maximum Ratings Tj = 25°C to 150°C 600 V vC0B Tj = 25°C to 150°C; RaE = 1 Mfi 600 V VGES Continuous ±20 V v Transient ±30 V
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30N60
30N60A
30N60U1
30N60AU1
1XSH30N60A
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QAE 21.2
Abstract: No abstract text available
Text: v¥ Low V IGBT with Diode High Speed IGBT with Diode IXSH 30 N60U1 IXSH 30 N60AU1 ces 600 V 600 V ^C25 V ¥ C E sat 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings v CES Tj = 25°C to 150°C 600 V v CGR
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N60U1
N60AU1
Q003bfl3
30N60U1
30N60AU1
4bflb22fc>
0003bfl4
QAE 21.2
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30N80
Abstract: No abstract text available
Text: in ixY S Low VCE sat IGBT with Diode High Speed IGBT with Diode iXSH 30 N60U1 IXSH 30 N60AU1 v* C E S ^C25 V * CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Short Circuit SO A Capability Symbol Test Conditions Maximum Ratings v CES ^ v CGR Tj = 25°C to 150°C; Rge = 1 MO
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N60U1
N60AU1
T0-247
30N60U1
30N60AU1
30N80
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40N60
Abstract: 40N60A 40n60 igbt
Text: LowVCE sat IGBT High Speed IGBT IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A VC E S ^C 25 VC E (s a t) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SOA Capability Symbol v Test Conditions Maximum Ratings Tj = 25°C to 150°C 600 V v COR T j = 25°C to 150°C; RGE = 1 MO
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O-247
40N60
40N60A
40n60 igbt
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IXGH20N60AU1
Abstract: N60A *GH20N60AU1 20N60AU 20N60
Text: 600 V 600 V 40 A 40 A CO iO, LU ^C25 O IXGH 20 N60U1 IXGH 20 N60AU1 > Low VrP, n IGBT with Diode CE sat High speed IGBT with Diode v CES 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ
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OCR Scan
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IXGH20
N60U1
IXGH20N60AU1
O-247
4bflb22b
20N60U1
20N60AU1
N60A
*GH20N60AU1
20N60AU
20N60
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30n60
Abstract: IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A n60u1
Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH30 N60U1 30 N60AU1 VCES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M£2
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IXGH30
N60U1
N60AU1
30N60U1
30N60AU1
30n60
IXGH30N60U1
IXC 844
30N60U1
n60u
30N60A
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Untitled
Abstract: No abstract text available
Text: IXSH/IXSM 40 N60 IXSH/IXSM 40 N60A Low VCE sat IGBT1 v High Speed IGBT VC E S ^C 25 VC E (sat) 600 V 600 V 75 A 75 A 2.5 V 3.0 V Short Circuit SO A Capability Symbol Test Conditions v CES Tj = 25°C to 150°C 600 V v CGR ^ 600 V Maximum Ratings = 25°C to 150°C; RGE = 1 M£2
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OCR Scan
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PDF
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O-247
40N60
40N60A
0D03bflfl
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Untitled
Abstract: No abstract text available
Text: ^C25 VCE sat 20 A 20 A 2.5 V 3.0 V VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10 N60AU1 600 V Combi Packs Preliminary data Symbol Test Conditions V« Td = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous
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10N60U1
N60AU1
4bflb22b
GD0223Ã
10N60AU1
D94006DE,
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n60b
Abstract: n60bu 32N60A
Text: DIXYS HiPerFAST IGBT with Diode IXGH32 N60AU1 IXGH32 N60AU1S IXGH32 N60BU1S Combi Pack VCES ^C25 VCE sat tfi 600 V 600 V 600 V 60 A 60 A 60 A 2.9 V 2.9 V 2.5 V 125 ns 125 ns 80 ns Prelim inary data Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C
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IXGH32
N60AU1
N60AU1S
N60BU1S
O-247
32N60
32N60AU1)
n60b
n60bu
32N60A
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