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    3/SEMICONDUCTOR GAMMA RADIATION DETECTOR Search Results

    3/SEMICONDUCTOR GAMMA RADIATION DETECTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3/SEMICONDUCTOR GAMMA RADIATION DETECTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UM9441 PIN RADIATION DETECTORS temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on devices of the UM9441 design show no


    Original     		PDF UM9441 UM9441

    UM9441

    Abstract: No abstract text available
    Text: UM9441 PIN RADIATION DETECTORS KEY FEATURES DESCRIPTION temperature so long as applied voltage exceeds the saturation voltage. This structure also minimizes the effects of permanent damage caused by neutrons and other high energy radiation. Experiments on


    Original     		PDF UM9441 UM9441

    60Co

    Abstract: No abstract text available
    Text: CHAPTER 7 SCINTILLATION COUNTING Radiation of various types is widely utilized for non-destructive inspection and testing such as in medical diagnosis, industrial inspection, material analysis and other diverse fields. In such applications, radiation detectors play an important role. There are various methods


    Original     		PDF NS-33 60Co

    Semiconductor Nuclear Radiation Detector

    Abstract: fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector
    Text: National Semiconductor Application Note 926 Michael Maher January 1994 INTRODUCTION Today’s rapidly changing global political climate is significantly impacting the military strategies of Free World countries Important decisions are being made regarding each


    Original     		PDF 20-3A Semiconductor Nuclear Radiation Detector fabrication GAMMA Radiation Detector 54AC00 seu Upset 54AC00 54AC245 AN-926 C1995 JM38510 nuclear radiation detector

    circuit diagram blood gas analyzer

    Abstract: Light Detector laser
    Text: CHAPTER 14 APPLICATIONS Photomultiplier tubes PMTs are extensively used as photodetectors in fields such as chemical analysis, medical diagnosis, scientific research and industrial measurement. This chapter introduces major applications of photomultiplier tubes and describes the principle and


    Original     		PDF

    Selection guide

    Abstract: United Detector Technology PSD
    Text: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable


    Original     		PDF KACC0001E02 Selection guide United Detector Technology PSD

    Alps 934a vco

    Abstract: No abstract text available
    Text: The following set of frequently asked questions concerns the radiation and operational performance of National Semiconductor’s LMX2305WG-MLS, LMX2315WG-MLS, and LMX2325WG-MLS space level phase lock loop devices. The non radiation specific information pertains to both the –QML military and


    Original     		PDF LMX2305WG-MLS, LMX2315WG-MLS, LMX2325WG-MLS 12/11/9perature LMX2305/15/25 Alps 934a vco

    5962F9764101VEA

    Abstract: 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS-6254RH HS9-6254
    Text: HS-6254RH Data Sheet August 1999 Radiation Hardened Ultra High Frequency NPN Transistor Array The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer, dielectrically isolated fabrication processes provides


    Original     		PDF HS-6254RH HS-6254RH 5962F9764101VEA 5962F9764101VEC 5962F9764101VXC GDIP1-T16 HS0-6254RH-Q HS1-6254RH HS9-6254

    proton rx 4000 watts power amplifier circuit diagram

    Abstract: Hamamatsu r300 0812E H5783
    Text: PHOTOMULTIPLIER TUBES Basics and Applications THIRD EDITION Edition 3a PHOTON IS OUR BUSINESS 2007 HAMAMATSU PHOTONICS K. K. ▲ Photomultiplier Tubes ▲ Photomultiplier Tube Modules © 2007 HAMAMATSU PHOTONICS K. K. Introduction Light detection technolgy is a powerful tool that provides deeper understanding of more sophisticated


    Original     		PDF OTH9001E03a proton rx 4000 watts power amplifier circuit diagram Hamamatsu r300 0812E H5783

    2N2369 avalanche

    Abstract: Microsemi micronote series 050 Semiconductor Nuclear Radiation Detector DIODE ga101 pin diodes radiation detector UM9441 Microsemi Generic Diode nuclear radiation detector diode GA100 radiation ionizing dose TID detector
    Text: Spring 1998 MicroNote Series 050 by Kent Walters, Microsemi Scottsdale Radiation Hardened Performance of Discrete Semiconductors Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military


    Original     		PDF

    CDFP4-F24

    Abstract: CDIP2-T18 CMM5104 CMM5104D1DZ CMM5104D3 CMM5104K1DZ CMM5104K3 r2a5
    Text: CMM5104 Radiation Hardened, High Reliability, CMOS/SOS 4096 Word by 1-Bit LSI Static RAM November 1995 Pinouts Features 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835, CDIP2-T18 TOP VIEW • Radiation Hardened to 10K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		PDF CMM5104 MIL-STD-1835, CDIP2-T18 CDFP4-F24 CDIP2-T18 CMM5104 CMM5104D1DZ CMM5104D3 CMM5104K1DZ CMM5104K3 r2a5

    1dz 2

    Abstract: CDIP2-T18 CMM5114A CMM5114AD1DZ CMM5114AD3 CMM5114AK1DZ CMM5114AK3 CDFP
    Text: CMM5114A Radiation Hardened, High Reliability, CMOS/SOS 1024 Word by 4-Bit LSI Static RAM November 1995 Features Pinouts 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835, CDIP2-T18 TOP VIEW • Radiation Hardened to 10K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg


    Original     		PDF CMM5114A MIL-STD-1835, CDIP2-T18 1dz 2 CDIP2-T18 CMM5114A CMM5114AD1DZ CMM5114AD3 CMM5114AK1DZ CMM5114AK3 CDFP

    HS1-2420RH-Q

    Abstract: HS-2420RH
    Text: HS-2420RH Radiation Hardened Fast Sample and Hold July 1995 Features Description • Maximum Acquisition Time The HS-2420RH is a radiation hardened monolithic circuit consisting of a high performance operational amplifier with its output in series with an ultra-low leakage analog switch


    Original     		PDF HS-2420RH HS-2420RH HS1-2420RH-Q

    ultrasonic 40 khz transducer

    Abstract: RCA photomultiplier mk-109 Ultrasonic Transducer application notes ultrasonic transducer excitation circuit lvdt accelerometer Schaevitz accelerometer lvdt accelerometer sensor ultrasonic transducer drive circuits LVDT strain gauge displacement transducer
    Text: A substantial amount of information is available on signal conditioning for common transducers. Fortunately, most of these devices, which are used to sense common physical parameters, are relatively easy to signal condition. Further, most transducer-based measurement requirements are well


    Original     		PDF LF412 LM329 AN-301 ultrasonic 40 khz transducer RCA photomultiplier mk-109 Ultrasonic Transducer application notes ultrasonic transducer excitation circuit lvdt accelerometer Schaevitz accelerometer lvdt accelerometer sensor ultrasonic transducer drive circuits LVDT strain gauge displacement transducer

    ON semiconductor image sensor

    Abstract: No abstract text available
    Text: NOIS1SM0250A STAR250 250K Pixel Radiation Hard CMOS Image Sensor Features Applications • 512 x 512 active pixels ■ Satellites ■ 25 m pixel size ■ Spacecraft monitoring ■ 1 inch optical format ■ Nuclear inspection ■ Up to 30 frames per second fps at full resolution


    Original     		PDF NOIS1SM0250A STAR250 10-bit STAR250) STAR250BK7) NOIS1SM0250A/D ON semiconductor image sensor

    Untitled

    Abstract: No abstract text available
    Text: NOIS1SM0250A STAR250 250K Pixel Radiation Tolerant CMOS Image Sensor Features • • • • • • • • • • • • • • • • 512 x 512 Active Pixels 25 mm Pixel Size 1 inch Optical Format Up to 30 Frames per Second fps at Full Resolution


    Original     		PDF NOIS1SM0250A STAR250 NOIS1SM0250A/D

    shadow photodiode

    Abstract: NOIS1SM0250A 114AK-01 JLDCC84 image sensor star tracker STAR250 star tracker video section meaning
    Text: NOIS1SM0250A STAR250 250K Pixel Radiation Tolerant CMOS Image Sensor Features • • • • • • • • • • • • • • • • 512 x 512 Active Pixels 25 mm Pixel Size 1 inch Optical Format Up to 30 Frames per Second fps at Full Resolution


    Original     		PDF NOIS1SM0250A STAR250 10E10 NOIS1SM0250A/D shadow photodiode 114AK-01 JLDCC84 image sensor star tracker STAR250 star tracker video section meaning

    CCD and CID Technology

    Abstract: CCTV DISTRIBUTION NETWORK single line diagram transistor AN132 AN132 ITU-601 RS-170 RS-343 CCTV DISTRIBUTION NETWORK diagram eye refraction system CCTV pinhole infrared
    Text: AN132 Application Note IMAGING TERMS 1/2 Inch CCD: A CCD measuring 1/2 inch along the diagonal across the photosensitive array. 1/3 Inch CCD: A CCD measuring 1/3 inch along the diagonal across the photosensitive array. 1/4 Inch CCD: A CCD measuring 1/4 inch along the diagonal across


    Original     		PDF AN132 24-bit 24-bit CCD and CID Technology CCTV DISTRIBUTION NETWORK single line diagram transistor AN132 AN132 ITU-601 RS-170 RS-343 CCTV DISTRIBUTION NETWORK diagram eye refraction system CCTV pinhole infrared

    BA-914

    Abstract: NOIS1SM0250A 114AK JLDCC84 shadow photodiode an5256 ADC hard radiation T15T STAR-250
    Text: NOIS1SM0250A STAR250 250K Pixel Radiation Tolerant CMOS Image Sensor Features • • • • • • • • • • • • • • • • 512 x 512 Active Pixels 25 mm Pixel Size 1 inch Optical Format Up to 30 Frames per Second fps at Full Resolution


    Original     		PDF NOIS1SM0250A STAR250 10E10 NOIS1SM0250A/D BA-914 114AK JLDCC84 shadow photodiode an5256 ADC hard radiation T15T STAR-250

    JLDCC84

    Abstract: No abstract text available
    Text: NOIS1SM0250A STAR250 250K Pixel Radiation Tolerant CMOS Image Sensor Features • • • • • • • • • • • • • • • • 512 x 512 Active Pixels 25 mm Pixel Size 1 inch Optical Format Up to 30 Frames per Second fps at Full Resolution


    Original     		PDF NOIS1SM0250A STAR250 NOIS1SM0250A/D JLDCC84

    UM9441

    Abstract: FX-25
    Text: PIN RADIATION DETECTORS Features • • • • • • High Photocurrent Sensitivity High Reliability Construction Fast Rise Time Wide Dynamic Range Hardness to Neutron Bombardment Low Operating Voltage Description Silicon PIN devices are effective detectors


    OCR Scan     		PDF UM9441 UM9441 U21/2 FX-25

    Untitled

    Abstract: No abstract text available
    Text: PIN RADIATION DETECTORS Features • High Photocurrent Sensitivity • High Reliability Construction • Fast Rise Time • Wide Dynamic Range • Hardness to Neutron Bombardment • Low Operating Voltage Description Silicon PIN devices are effective detectors


    OCR Scan     		PDF UM9441

    smd transistor 304

    Abstract: cdfp4-f16
    Text: HS-6254RH Semiconductor Radiation Hardened Ultra High Frequency NPN Transistor Array March 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-6254RH is a Radiation Hardened array of five NPN transistors on a common substrate. One of our bonded wafer,


    OCR Scan     		PDF HS-6254RH MIL-PRF-38535 HS-6254RH 1320nm 1340nm 05A/cm2 smd transistor 304 cdfp4-f16

    Untitled

    Abstract: No abstract text available
    Text: HS-2420RH Semiconductor Radiation Hardened Fast Sam p le and Hold juiy 1995 Features Description • Maximum Acquisition Time The HS-2420RH is a radiation hardened monolithic circuit consisting of a high performance operational amplifier with its output in series with an ultra-low leakage analog switch


    OCR Scan     		PDF HS-2420RH HS-2420RH 05A/cm2