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    OTTO Engineering Inc K3P-22ZZ3-M9MABB2

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    2ZZ3 Datasheets Context Search

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    100LVE222

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA P roduct Preview Low Voltage 1:15 Differential ECL/PECL Clock Driver The M C100LVE222 is a low voltage, low skew 1:15 differential ECL fanout buffer designed with clock distribution in mind. The device features fully differential clock paths to m inimize both device and system skew.


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    C100LVE222 LVE222 100LVE222 PDF

    Untitled

    Abstract: No abstract text available
    Text: SRM20V100LLMX7 CMOS 1 M-BIT STATIC RAM • Low Supply Voltage • Wide Temperature Range • Low Supply Current • Access Time 70ns 2.7V • 131,072 Words x 8-Bit Asynchronous DESCRIPTION The SRM 20V100LLMX7 is a 131,072 w ords x 8-bit asynchronous, static, random access m em ory on


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    SRM20V100LLMX7 20V100LLMX7 000-97-MEM-1 000-97-M PDF

    PM5103

    Abstract: 2ZZ3 F5311 PM5301 PM5311 PM5311SLTX PM5323
    Text: Te l e c o m S ta n d a r d Product I I Pacific Microelectronics Microol_ Centre / PREUM NARY INFORMATION P M 5311 S LTX SONET U N E TERMNAT1NG TRANSCEIVER FE A TU R ES • Monolithic SONET Line Terminating Transceiver for processing the line overhead


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    PM5311 STS-12 910420P2 900903P3 PM5103 2ZZ3 F5311 PM5301 PM5311SLTX PM5323 PDF

    non interruptible and burst and memory

    Abstract: LC382161AT
    Text: SA 0O CMOS LSI LC 382161A T -10/12/15 2 MEG 65536 Words X 16 Bits X 2 Banks Synchronous DRAM Target Specifications Overview The LC382161AT product is a 3.3V single-voltage power supply Synchronous DRAM (SDRAM) with a 65536-word x 16-bit x 2-bank organization. This SDRAM features a large capacity, high speed, and low


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    82161A LC382161AT 65536-word 16-bit 382161AT 50-pin non interruptible and burst and memory PDF