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    A15A

    Abstract: A15B EDI8L21664V MO-151 TMS320C54X 9704
    Text: ^EDI EDI8L21664V M ELECTRONIC DESIGNS. INC 2x64Kx16SRAM TMS320C54X External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith two 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x


    OCR Scan     		PDF EDI8L21664V 2x64Kx16SRAM TMS320C54x MO-151 EDI8L21664VxxBC 2x64Kx16 64Kx16 EDI8L21664V10BC EDI8L21664V12BC A15A A15B EDI8L21664V MO-151 9704

    Untitled

    Abstract: No abstract text available
    Text: EDI8L21665V 9 *fijiifiiiR Asvn^hrnnw is ^0V w N The EDI8L21665V is a memberof EDTs Asynchronous SRAM family designed in support of Texas instruments TMS320C5x DSPs. The 2x64Kx16SRAMisa3.3V, 2 megabit SRAM constructed with two 64K x 16 die mounted on a multi-layer substrate. Thedeviceis


    OCR Scan     		PDF EDI8L21665V EDI8L21665V TMS320C5x 2x64Kx16SRAMisa3 x15mm, 12nsand15ns. EDJ8L21665V 2x16Kx16 EDJ8L216128V 2x128Kx16

    A15B

    Abstract: No abstract text available
    Text: ^EDI EDI8L21664V h El£CTRO*«C 0C9CN& NC.1 2xS4KxieSRAM TMS320C54XExternalSRAM MemorySolution F eatures The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi­ layer laminate substrate. The device is packaged in a 74


    OCR Scan     		PDF TMS320C54XExternalSRAM TMS320C54x MO-151 EDI8L21664V EDI8L21664VxxBC 2x64Kx16 64Kx16 EDI8L21664V10BC EDI8L21664V12BC EDI8L21664V A15B