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    2X1013 Price and Stock

    Bourns Inc 4612X-101-331LF

    RNET - THK FILM CONF SIP
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    Bourns Inc 4612X-101-334LF

    RES ARRAY 11 RES 330K OHM 12SIP
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    Bourns Inc 4612X-101-393LF

    RNET - THK FILM CONF SIP
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    Bourns Inc 4612X-101-392LF

    Resistor Networks & Arrays 12pins 3.9Kohms Bussed
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    Mouser Electronics 4612X-101-392LF
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    Bourns Inc 4612X-101-391LF

    Resistor Networks & Arrays 12pins 390 OHMS Bussed
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    2X1013 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    photodiode responsivity 1550nm, 1

    Abstract: Photodiode, 1550nm NEP photodiode 1550nm nep photodiode 5mm 1550nm photodiode nep 1300nm-1550nm InGaAs Photodiode 1550nm
    Text: Large Area InGaAs p-i-n Photodiode 35PD5M-TO The 35PD5M-TO series of InGaAs photodiodes has a 5mm-diameter photosensitive region. Applications include high sensitivity instrumentation and sensing. Class A devices feature very low dark current and high dynamic impedance. High reliability is assured through planar,


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    35PD5M-TO 35PD5M-TO 1300nm 1550nm 2x10-13 6x10-13 2x1012 6x1011 -40oC photodiode responsivity 1550nm, 1 Photodiode, 1550nm NEP photodiode 1550nm nep photodiode 5mm 1550nm photodiode nep 1300nm-1550nm InGaAs Photodiode 1550nm PDF

    1550nm photodiode nep

    Abstract: photodiode 1550nm nep 35PD3M-TO photodiode responsivity 1550nm Photodiode, 1550nm NEP InGaAs Photodiode 1550nm 35PD3M InGaas PIN photodiode, 3mm
    Text: Large Area InGaAs p-i-n Photodiode 35PD3M-TO The 35PD3M-TO series of InGaAs photodiodes has a 3mm-diameter photosensitive region. Applications include high sensitivity instrumentation and sensing. Class A devices feature very low dark current and high dynamic impedance. High reliability is assured through planar,


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    35PD3M-TO 35PD3M-TO 1300nm 1550nm 5x10-14 2x10-13 4x1012 5x1012 -40oC 1550nm photodiode nep photodiode 1550nm nep photodiode responsivity 1550nm Photodiode, 1550nm NEP InGaAs Photodiode 1550nm 35PD3M InGaas PIN photodiode, 3mm PDF

    C30902S

    Abstract: C30902E geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S
    Text: Description Silicon Avalanche Photodiodes PerkinElmer Type C30902E avalanche C30902E, C30902S, C30921E, C30921S EVERYTHING High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications IN A photodiode utilizes a silicon detector chip


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    C30902E C30902E, C30902S, C30921E, C30921S C30902S geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S PDF

    AUS308

    Abstract: PSR4000 AUS308 HL832NX TAIYO PSR 4000 AUS308 dielectric TAIYO PSR 4000 AUS308 Thermal Conductivity PSR-4000 AUS-308 PSR4000 AUS308 thermal
    Text: March 21, 2007 CN 032107 Customer Notification CX2751x-12 Material Set Change Dear Valued Customer: This notification is for the CX27511-11, CX27512-12, CX27513-12, CX27514-12, CX27512G-14. Mindspeed’s turnkey supplier has sent notification that all their BGA products will be manufactured using


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    CX2751x-12 CX27511-11, CX27512-12, CX27513-12, CX27514-12, CX27512G-14. CX2751x-12, CX2751xG-12, 2751x-PCN-001-A AUS308 PSR4000 AUS308 HL832NX TAIYO PSR 4000 AUS308 dielectric TAIYO PSR 4000 AUS308 Thermal Conductivity PSR-4000 AUS-308 PSR4000 AUS308 thermal PDF

    rubidium

    Abstract: RAFS PerkinElmer Optoelectronics MIL-STD-1540 MIL-STD-1540B atomic clock
    Text: High Performance Space Qualified Rubidium Frequency Standard Model RAFS he PerkinElmer Rubidium Atomic T Frequency Standard RAFS is an exceptionally high performance and high reliability space-qualified rubidium clock developed for the GPS Navstar navigation satellites.


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    MIL-STD-1540B MIL-STD-1541A rubidium RAFS PerkinElmer Optoelectronics MIL-STD-1540 MIL-STD-1540B atomic clock PDF

    PDB-V107

    Abstract: No abstract text available
    Text: Blue Enhanced Photovoltaic Silicon Photodiode PDB-V107 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .135 [3.43] MAX ±.008 [0.20] .300 [7.62] .070 [1.78] 2X Ø.020 [0.51] ANODE ±.008 [0.20] Ø.355 [9.02] 120° VIEWING ANGLE .265 [6.73] CATHODE


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    PDB-V107 PDB-V107 PDF

    TO8 package

    Abstract: 5mm photodiode photodiode 5mm Photodiode 1550nm sensitivity photodiode responsivity 1550nm, 1 InGaAs Photodiode 1550nm
    Text: PD5M 5mm InGaAs Photodiode FEATURES • Planar Structure • Dielectric Passivation • High Shunt Resistance • High Responsivity APPLICATIONS PD5M-0xx Ceramic Sub-Mount • Sensing • High Sensitivity Instrumentation PD5M-1xx TO8 can Package PRODUCT DESCRIPTION


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    PDF

    TO5 package

    Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2
    Text: PD3M 3mm InGaAs Photodiode FEATURES • Planar Structure • Dielectric Passivation • High Shunt Resistance • High Responsivity APPLICATIONS PD3M-0xx Ceramic Sub-Mount • Sensing • High Sensitivity Instrumentation PD3M-1xx TO5 can Package PRODUCT DESCRIPTION


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    PDF

    MIL-STD-1540

    Abstract: rubidium rubidium frequency standards RAFS DTS0807 atomic clock MIL-STD-1540B perkinelmer CONTROLLER
    Text: High Performance, Space Qualified Introduction PerkinElmer’s Rubidium Atomic Frequency Standard RAFS is an exceptionally high performance and high reliability space-qualified rubidium time and frequency reference developed for the GPS Navstar navigation satellites.


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    DTS0807 MIL-STD-1540 rubidium rubidium frequency standards RAFS DTS0807 atomic clock MIL-STD-1540B perkinelmer CONTROLLER PDF

    C30807

    Abstract: C30810 C30822 C30822 photodiode C3081 k2645 C30808 C30809 C30831 C30839
    Text: N-Type Silicon PIN Photodetectors C30807, C30808, C30809, C30810, C30822, C30831 EVERYTHING IN A NEW LIGHT. Description Features This family of N-type silicon p-i-n • Broad Range of Photosensitive Surface Areas 0.2 mm2 to 100 mm2 photodiodes is designed for use in a wide


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    C30807, C30808, C30809, C30810, C30822, C30831 C30807 C30809 C30808 C30810 C30822 C30822 photodiode C3081 k2645 C30808 C30809 C30831 C30839 PDF

    Untitled

    Abstract: No abstract text available
    Text: Blue Enhanced Photovoltaic Silicon Photodiode PDB-V107 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .135 [3.43] MAX ±.008 [0.20] .300 [7.62] .070 [1.78] 2X Ø.020 [0.51] ANODE ±.008 [0.20] Ø.355 [9.02] 120° VIEWING ANGLE .265 [6.73] CATHODE


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    PDB-V107 PDB-V107 2X10-13 660nm PDF

    VDE 0812

    Abstract: DIN 47100 Belden 47100 metallschicht hypalon PP EPDM pimf TEFZEL awg 106 jaune
    Text: 374 Info Technische Daten Info Données techniques Schutzarten IP Modes de protection IP Berührungs- und Fremdkörperschutz Wasserschutz Protection contre les contacts et la pénétration des corps étrangers solides, protection contre les effets nuisibles dus à la pénétration de l’eau


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    PDF

    G5832

    Abstract: No abstract text available
    Text: Spectral Response 0.7 to 1.7 |iim • Spectral Response • Dark Current vs. Reverse Voltage • Terminal Capacitance vs. Reverse Voltage Typ.Ta=25’C.1=1MHz 0.6 0.8 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (/im ) 2.0 1 0 -' The cut-off wavelengths of the TE-cooled de­


    OCR Scan
    KIRD80039EA P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA G5832 PDF

    J18TE2-66G-R01M-2.6

    Abstract: InGaAs J18TE2-66G J18TE2-66G-R01M-1 480067 J18TE1-37S-R02M-1 J18TE2-66G-R250U-2 480051 12Xl J18TE4-3GN-R01M-2
    Text: ¿ L e G s G J U P SO N Extended inGaAs Photodiodes 0.8 to 2.6 ¡am 1.9Hm Therm oelectrically Cooled Extended InGaAs Detectors Model Number Cutoff Shunt Part Active Operating W ave­ ResponResistance Num ber Size Tem per­ leng th sivity Rd D ia. ature (50%)


    OCR Scan
    J18TE1-1 J18TE1-37S-R250U-1 9xl012 J18TE1-37S-R01M-1 2xl013 J18TE1-37S-R02M-1 J18TE2-1 Ther80 J18TE4-3GN-R01M-2 J18TE2-66G-R01M-2.6 InGaAs J18TE2-66G J18TE2-66G-R01M-1 480067 J18TE2-66G-R250U-2 480051 12Xl PDF