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    2SK975TZ-E Renesas Electronics Corporation Nch Single Power Mosfet 60V 1.5A 400Mohm To-92 Mod Visit Renesas Electronics Corporation
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    2SK975 Price and Stock

    Renesas Electronics Corporation 2SK975TZ-E

    MOSFET
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    Chip1Stop 2SK975TZ-E 5,000
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    • 100 $2.94
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    2SK975 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK975 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK975 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK975 Hitachi Semiconductor Silicon N-Channel MOSFET Original PDF
    2SK975 Renesas Technology Silicon N Channel MOS FET Original PDF
    2SK975 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK975 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK975 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK975 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK975 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK975 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK975 Unknown FET Data Book Scan PDF

    2SK975 Datasheets Context Search

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    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK975 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK975 D-85622 Hitachi DSA002779

    2SK975

    Abstract: Hitachi DSA0015
    Text: 2SK975 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK975 2SK975 Hitachi DSA0015

    2SK975

    Abstract: Hitachi DSA00388
    Text: 2SK975 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK975 2SK975 Hitachi DSA00388

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SK975 R07DS0434EJ0300 Previous: REJ03G0905-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device


    Original     		PDF 2SK975 R07DS0434EJ0300 REJ03G0905-0200) PRSS0003DC-A

    2SK975

    Abstract: No abstract text available
    Text: 2SK975 Silicon N-Channel MOS FET Application TO–92 MOD High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter,


    Original     		PDF 2SK975 O-92MOD 2SK975

    2SK975TZ-E

    Abstract: No abstract text available
    Text: Preliminary Datasheet 2SK975 R07DS0434EJ0300 Previous: REJ03G0905-0200 Rev.3.00 Jun 07, 2011 Silicon N Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device


    Original     		PDF 2SK975 R07DS0434EJ0300 REJ03G0905-0200) PRSS0003DC-A 2SK975TZ-E

    Hitachi DSA00279

    Abstract: No abstract text available
    Text: 2SK975 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK975 Hitachi DSA00279

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK975 Silicon N-Channel MOS FET ADE-208-1243 Z 1st. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    Original     		PDF 2SK975 ADE-208-1243 D-85622 Hitachi DSA00276

    2SK975TZ

    Abstract: 2SK975 PRSS0003DC-A
    Text: 2SK975 Silicon N Channel MOS FET REJ03G0905-0200 Previous: ADE-208-1243 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device  Can be driven from 5 V source


    Original     		PDF 2SK975 REJ03G0905-0200 ADE-208-1243) PRSS0003DC-A 2SK975TZ 2SK975 PRSS0003DC-A

    Untitled

    Abstract: No abstract text available
    Text: 2SK975 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)1.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)900m Minimum Operating Temp (øC)


    Original     		PDF 2SK975

    2SK975

    Abstract: 4AK25 SP-10 DSA003638
    Text: 4AK25 Silicon N-Channel Power MOS FET Array ADE-208-1207 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A • Low drive current • High speed switching • High density mounting


    Original     		PDF 4AK25 ADE-208-1207 SP-10 2SK975 4AK25 SP-10 DSA003638

    Hitachi DSA002787

    Abstract: No abstract text available
    Text: 4AK25 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance RDS on ≤ 0.45 Ω, VGS = 10 V, ID = 1 A • • • Low drive current High speed switching High density mounting Outline 4AK25 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 4AK25 Hitachi DSA002787

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		PDF HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    Untitled

    Abstract: No abstract text available
    Text: 2SK975 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive


    OCR Scan     		PDF 2SK975

    2SK975

    Abstract: No abstract text available
    Text: 2SK975 Silicon N-Channel MOS FET HITACHI Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • 4 V gate drive device — Can be driven from 5 V source • Suitable for m otor drive, D C-D C converter, pow er sw itch and solenoid drive


    OCR Scan     		PDF 2SK975 2SK975

    2SJ235

    Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SJ235 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet

    2SK1275

    Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1202 2SK1203 2SK1204 2SK696 2SK1275 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16

    2sk1299

    Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
    Text: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2sk1299 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740

    ac Inverter schematics 10 kw

    Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
    Text: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES


    OCR Scan     		PDF GN4530C GN6010A GN6015A GN6020C GN6030C GN6050E GN6075E GN9060E GN12015C GN12030E ac Inverter schematics 10 kw 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C

    2SK1778

    Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
    Text: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.


    OCR Scan     		PDF high-sp03 2SK1665 2SJ215 2SJ217 2SK1303 2SK1304 2SK1298 2SK1666 2SJ216 2SJ218 2SK1778 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094

    2SK44

    Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
    Text: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be


    OCR Scan     		PDF 0-30W 0-50W 0-100W 00-200W 2SK579 2SK580 2SK1151 2SK1152 2SK1153 2SK1154 2SK44 2SJ182 2SJ214 2SK513 2SJ235

    2SK1778

    Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972