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    Untitled

    Abstract: No abstract text available
    Text: 2SK878-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V)-3.5 I(D) Max. (A)100m P(D) Max. (W)340m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.37m


    Original     		PDF 2SK878-2

    2SK752

    Abstract: NEC diode 2SK754 3N125 3N126 2SK791 2SK755 3N105 3N134 82230
    Text: PART NUMBER INDEX Part Number Manufacturer 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 2SK762 2SK762A 2SK763 2SK763A 2SK764 2SK764A 2SK765 2SK765A 2SK766 2SK767 2SK768 2SK769 2SK770 2SK771 2SK772 2SK773 2SK774 2SK775 2SK776 2SK777


    Original     		PDF 2SK752 2SK753 2SK754 2SK755 2SK756 2SK757 2SK758 2SK759 2SK760 2SK761 NEC diode 3N125 3N126 2SK791 3N105 3N134 82230

    2SK878

    Abstract: No abstract text available
    Text: SONY CORP/COflPONENT PRODS IflE D • A3fl23fl3 OOOElbO T ■ 2SK878 SONY AIGaAs/GaAs Low Noise Microwave HEMT T - 31-25 Package Outline Description U n it: mm The 2 S K 8 7 8 is an A IG aA s/G aA s H EM T fabricated by MOCVD M etal Organic C hem ical Vapor Deposition . T h is 0 .5 m icron gate FET


    OCR Scan     		PDF A3fl23fl3 2SK878 temper46 T-31-25 12GHz 2SK878