Untitled
Abstract: No abstract text available
Text: 2SK677-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V)-3.5 I(D) Max. (A)100m P(D) Max. (W)340m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.37m
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2SK677-2
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ic sony 0642
Abstract: sony 0642 2SK677 IC 0642 sony ke 931 0642 sony
Text: _ 2SK677H5 SONY» AIGaAs/GaAs Low Noise Microwave H EM T C H IP Description The 2 S K 6 7 7 H 5 is an A IG aA s/G aA s HEM T c h ip fa b ric a te d by M O CVD M e ta l O rganic C hem ical V a p o r D e p o sitio n . T his 0 .5 m icro n gate FET fe a tu re s very lo w n o ise fig u re and h ig h
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2SK677H5
ic sony 0642
sony 0642
2SK677
IC 0642 sony
ke 931
0642 sony
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sony 0642
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron
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2SK677H5
2SK677H5
D0G312b
sony 0642
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2SK677
Abstract: 741 omp 2SK67-7
Text: SONY C OR P / C O MP O N E N T S O N PRODS 1ÖE 5302303 D 0005136 t> 2SK677 Y AIGaAs/GaAs Low Noise Microwave HEMT. T-31-25 P a c k a g e O utline D e sc rip tio n The 2 SK 67 7 is an A IG aA s/G aA s H EM T fabricated by M O C V D Metal Organic Chemical
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2SK677
T-31-25
2SK677
G002141
12GHz
741 omp
2SK67-7
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2SK653
Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649
Text: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s
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2SK648
2SK649
2SK650
2SK651
150ni
2SK652
2SK665
50MHz
2SK666
2SK765
2SK653
2SK671
Gv-80dB
2SK674
2SK669
2SK677
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2sk125
Abstract: SLD300 photo magneto electric 1T32 SLD203 ic dm 311 SGM2006M "CD pickup" 1T339
Text: 2. 1 Index by Usage Variable Capacitance Diodes Type 1T32 1T32A 1T33 1T33A Package 2P Mini mold 1T33C 1T362 1T363 2P Super Mini mold 1T364 1T359 2P Mini mold 1T360 Remark Application Voltage V) Page Smaller package UH F/V H F tuning 31 AC: 3% (1T32A: 2%)
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1T32A
1T33A
1T33C
1T362
1T363
1T364
1T359
1T360
1T32A:
1T33A:
2sk125
SLD300
photo magneto electric
1T32
SLD203
ic dm 311
SGM2006M
"CD pickup"
1T339
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2SK566
Abstract: 2SK676 2SK989 2SK677 2SK587 3SK165 2SK67-6 2SK9 2SK677-2 2SK676-1
Text: SONY CORP/COMPONENT PRODS 0 3 0 2 3 0 3 0 0 0 2 1 3 4 =1 IfiE D 2SK676 AIGaAs/GaAs Low Noise Microwave HEMT Description Package Outline Unit: mm The 2 SK 6 7 6 is an AIGaAs/GaAs HEMT fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET
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2SK676
power12
GD02137
T-31-25
12GHz
2SK566
2SK989
2SK677
2SK587
3SK165
2SK67-6
2SK9
2SK677-2
2SK676-1
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sgh5002f
Abstract: SGM2004M 1T32 dm211 DM-111 DM-211 1T339 2SK152 SGM2006M phd003
Text: 1. Type Page List of Model Names Type Page Type Page 1T32/1T32A 31 SLD202U/V 73 SLU302XR 193 1T33/1T33A 34 SLD202U-3/V-3 76 SLU303VR 197 1T33C 37 SLD203AV 79 SLU303XR 201 1T339 335 SLD301B 102 SLU304VR 205 1T359 49 SLD301V 82 SLU304XR 209 1T360 51 SLD301WT
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1T32/1T32A
1T33/1T33A
1T33C
1T339
1T359
1T360
1T362
1T363
1T364
PHD003
sgh5002f
SGM2004M
1T32
dm211
DM-111
DM-211
2SK152
SGM2006M
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