Untitled
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.75 max. • High-speed switching • Allowing to supply with the radial taping 15.6±0.5 • Features (0.8) (0.8) 3.0±0.2
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2SK0655
2SK655)
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2SK0656
Abstract: 2SK656 SC-72
Text: Silicon MOS FETs Small Signal 2SK0656 (2SK656) Silicon N-Channel MOS FET unit: mm For switching 3.0±0.2 4.0±0.2 • Features Parameter Symbol Unit Drain to Source breakdown voltage VDSS 50 V Gate to Source voltage VGSO 8 V Drain current ID 100 mA Max drain current
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2SK0656
2SK656)
2SK0656
2SK656
SC-72
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2SK65
Abstract: 2SK0065 K242
Text: Silicon Junction FETs Small Signal 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone unit: mm 4.5±0.1 2.0±0.2 0.7 1.0 4.0±0.2 • Features 10.5±0.5 ● Diode is connected between gate and source
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2SK0065
2SK65)
2SK65
2SK0065
K242
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2SK0656
Abstract: 2SK656 MS50K
Text: Silicon MOSFETs Small Signal 2SK0656 (2SK656) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 • High-speed switching • Small drive current owing to high input inpedance
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2SK0656
2SK656)
2SK0656
2SK656
MS50K
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Untitled
Abstract: No abstract text available
Text: 2SK655 Silicon MOS FETs Small Signal 2SK655 Silicon N-Channel MOS Unit : mm For switching 3.0±0.2 4.0±0.2 Radial taping possible marking 1 2 3 2.0±0.2 ● 0.7±0.1 High-speed switching +0.2 0.45–0.1 ● 15.6±0.5 • Features ■ Absolute Maximum Ratings (Ta = 25˚C)
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2SK655
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Untitled
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal 2SK0656 (2SK656) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 M Di ain sc te on na tin nc ue e/ d • High-speed switching • Small drive current owing to high input inpedance
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2SK0656
2SK656)
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2SK655
Abstract: SC-72
Text: Silicon MOS FETs Small Signal 2SK655 Silicon N-Channel MOS FET For switching unit: mm 4.0±0.2 3.0±0.2 • Features Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature
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2SK655
SC-72
2SK655
SC-72
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2SK657
Abstract: SC-71
Text: Silicon MOS FETs Small Signal 2SK657 Silicon N-Channel MOS FET For switching unit: mm 6.9±0.1 2.5±0.1 1.0 1.0 1.5 R0.9 R0.9 0.85 Ratings 50 8 ±100 ±200 400 150 −55 to +150 Symbol VDSS VGSO ID IDP PD Tch Tstg Unit V V mA mA mW °C °C 3 2 2.5 0.45±0.05
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2SK657
2SK657
SC-71
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2SK0657
Abstract: 2SK657 SC-71
Text: Silicon MOS FETs Small Signal 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 2.5±0.1 6.9±0.1 (1.0) 4.1±0.2 2.4±0.2 1.0±0.1 R 0.7 2.0±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2SK0657
2SK657)
2SK0657
2SK657
SC-71
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2SK65
Abstract: 2SK0065
Text: Silicon Junction FETs Small Signal 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone M Di ain sc te on na tin nc ue e/ d unit: mm ● Diode is connected between gate and source ● Low noise voltage
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2SK0065
2SK65)
2SK65
2SK0065
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2SK0656
Abstract: 2SK656
Text: Silicon MOSFETs Small Signal 2SK0656 (2SK656) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 ue pl d in an c se ed lud pl vi an m m es si
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2SK0656
2SK656)
2SK0656
2SK656
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2SK0657
Abstract: 2SK657 SC-71
Text: Silicon MOS FETs Small Signal 2SK0657 (2SK657) Silicon N-Channel MOS FET Unit: mm For switching 2.5±0.1 6.9±0.1 (1.5) R 0.9 1.0±0.1 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 3.5±0.1 ● High-speed switching ● M type package, allowing easy automatic and manual insertion as
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2SK0657
2SK657)
2SK0657
2SK657
SC-71
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2SK0065
Abstract: 2SK65
Text: Silicon Junction FETs Small Signal 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone unit: mm 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 ● Diode is connected between gate and source ● Low noise voltage
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2SK0065
2SK65)
2SK0065
2SK65
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Untitled
Abstract: No abstract text available
Text: 2SK65 Silicon Junction FETs Small Signal 2SK65 Silicon N-Channel Junction For impedance conversion in low frequency For electret capacitor microphone Unit : mm 4.5±0.1 2.0±0.2 4.0±0.2 0.7 1.0 • Features Diode connected between gate and source ● Low noise voltage
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2SK65
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2sk65
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone unit: mm 4.0±0.2 (0.8) 3.0±0.2 2.0±0.2 ● Diode is connected between gate and source ● Low noise voltage
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2SK0065
2SK65)
2sk65
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MA408
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 M Di ain sc te on na tin nc ue e/ d • High-speed switching • Allowing to supply with the radial taping
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2SK0655
2SK655)
MA408
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Untitled
Abstract: No abstract text available
Text: 2SK652Q Transistors N-Channel JFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V)55 I(D) Max. (A)30m I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150þ I(GSS) Max. (A)-10n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)
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2SK652Q
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Untitled
Abstract: No abstract text available
Text: Silicon Junction FETs Small Signal 2SK0065 (2SK65) Silicon N-Channel Junction FET For impedance conversion in low frequency For electret capacitor microphone unit: mm 2.0±0.2 (0.8) 3.0±0.2 M Di ain sc te on na tin nc ue e/ d 4.0±0.2 ● Diode is connected between gate and source
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2SK0065
2SK65)
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2SK0655
Abstract: 2SK655
Text: Silicon MOSFETs Small Signal 2SK0655 (2SK655) Silicon N-channel MOSFET Unit: mm 2.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d (0.8) 3.0±0.2 For switching circuits • Features (0.8) 0.75 max. 15.6±0.5 ue pl d in an c se ed lud pl vi an m m es si
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2SK0655
2SK655)
2SK0655
2SK655
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2SK659
Abstract: 0118G xk30
Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SK659 The 2SK659 is N-Channel MOS Field E ffect Power Transistor PACKAGE DIMENSIONS designed fo r solenoid, m o to r and lamp driver. In m illim eters inches FEATURES • 4 V Gate Drive — Logic level —
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2SK659
2SK659
RS39726
1986M
0118G
xk30
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2SK654
Abstract: transistor c558 C558 transistor vc110
Text: E C ELECTRONICS INC 64 27525 N E C Tfi ]>E|tMS7S5S ELECT RON IC S INC MOS DDlññSS 98D 18855 FIELD EFFECT ELECTRON DEVICE § TRANSISTOR 2SK654 FAST SWITCHING N - C H A N N E L S I L I C O N P O WE R PACKAGE DIMENSIONS {Unit: mm «±02.« 5.0 = 0.2 fr~TTi
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2SK654
-55to
bm2752s
454-mi
J22686
2SK654
transistor c558
C558 transistor
vc110
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Untitled
Abstract: No abstract text available
Text: N E C ELECTRONICS INC "TA DeT|l,427S25 D D i a a S T □ I ~r ~ * el - ' i i D N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK659 D E S C R IP T IO N The 2 S K 6 5 9 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, motor and lamp driver.
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427S25
2SK659
T-39-11
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2SK659
Abstract: TC-6071
Text: SEC j M O S Field Effect Pow er Transistor 2SK659 N ^ * A " N or7 - M O S T s + i y ^ X f m mm N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK659ii, N^-v^;u« a<7 - M 0 S FETT\ 5 V * S * I C i 7 f FET CO HM H X T 't o 10.5 MAX. #
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2SK659
2SK659Ã
2SK659
TC-6071
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2SK659
Abstract: No abstract text available
Text: C ELECTRONICS INC Tfl »F|t.M27S2S DOlflñS11] D ~ f D ^ N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK659 D E S C R IP T IO N The 2 S K 6 5 9 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, motor and lamp driver.
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2SK659
2SK659
-55to
T-39-11
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