2SK4020
Abstract: K4020
Text: 2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4020 Chopper Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 0.6 MAX. z Low drain-source ON-resistance: RDS (ON) = 0.56 Ω (typ.)
|
Original
|
PDF
|
2SK4020
2SK4020
K4020
|
K4026
Abstract: No abstract text available
Text: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications 1.5 ± 0.2 Unit: mm Features 1.6 Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)
|
Original
|
PDF
|
2SK4026
K4026
|
K4020
Abstract: No abstract text available
Text: 2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4020 Chopper Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 6.5 ± 0.2 5.2 ± 0.2 z 4-V gate drive 0.6 MAX. z High forward transfer admittance: |Yfs| = 4.5 S (typ.)
|
Original
|
PDF
|
2SK4020
K4020
|
K4020
Abstract: 2SK4020
Text: 2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4020 Chopper Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ z Low leakage current : IDSS = 100 A (max) (VDS = 200 V)
|
Original
|
PDF
|
2SK4020
K4020
2SK4020
|
K4023
Abstract: 2SK4023
Text: 2SK4023 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSV 2SK4023 ○ スイッチングレギュレータ用 1.5 ± 0.2 単位: mm 5.2 ± 0.2 : RDS (ON) = 4.0 Ω(標準) • 順方向伝達アドミタンスが高い。 : |Yfs| = 0.8 S (標準)
|
Original
|
PDF
|
2SK4023
K4023
2SK4023
|
K4020
Abstract: 2SK4020
Text: 2SK4020 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK4020 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 1.5 ± 0.2 単位: mm 6.5 ± 0.2 5.2 ± 0.2 1.6 z 取り扱いが簡単な、エンハンスメントタイプです。
|
Original
|
PDF
|
2SK4020
10VID
K4020
20070701-JA
K4020
2SK4020
|
K4023
Abstract: 2SK4023
Text: 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4023 Switching Regulator, DC/DC Converter 1.5 ± 0.2 Unit: mm 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.) High forward transfer admittance: |Yfs| = 0.8 S (typ.)
|
Original
|
PDF
|
2SK4023
K4023
2SK4023
|
k4026
Abstract: 2SK4026
Text: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications １．５±０．２ Unit: mm ５．２±０．２ Features １． ６ Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)
|
Original
|
PDF
|
2SK4026
k4026
2SK4026
|
Untitled
Abstract: No abstract text available
Text: 2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4022 Switching Regulators, DC-DC Converters and Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 1.6 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)
|
Original
|
PDF
|
2SK4022
|
2SK4020
Abstract: K4020
Text: 2SK4020 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4020 Chopper Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ６．５±０．２ ５．２±０．２ ０．６ MAX． Low leakage current
|
Original
|
PDF
|
2SK4020
2SK4020
K4020
|
2SK4022
Abstract: No abstract text available
Text: 2SK4022 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4022 Switching Regulator, DC/DC Converter and Motor Drive Applications １．５±０．２ Unit: mm ５．２±０．２ １．６ 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.)
|
Original
|
PDF
|
2SK4022
2SK4022
|
2SK4028
Abstract: No abstract text available
Text: データ・シート 接合形電界効果トランジスタ Junction Field Effect Transistor 2SK4028 N チャネル接合形シリコン電界効果トランジスタ ECM インピーダンス変換用 外形図（単位：mm） 2SK4028 は，小型パッケージかつ高ゲインのため音響用や携
|
Original
|
PDF
|
2SK4028
3pXSOF03
D17529JJ1V0DS00
D17529JJ1V0DS
2SK4028
|
2sk40
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK4029 Silicon N-channel MOSFET For switching circuits Unit: mm • Features High-speed switching Low ON resistance Ron Incorporating a built-in gate protection-diode
|
Original
|
PDF
|
2002/95/EC)
2SK4029
2sk40
|
K4026
Abstract: 2SK4026
Text: 2SK4026 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOS V 2SK4026 ○ スイッチングレギュレータ用 1.5 ± 0.2 単位: mm オン抵抗が低い。 : RDS (ON) = 6.4 Ω (標準) • 順方向伝達アドミタンスが高い。
|
Original
|
PDF
|
2SK4026
K4026
2SK4026
|
|
|
Untitled
Abstract: No abstract text available
Text: Silicon MOSFETs Small Signal 2SK4029 Silicon N-channel MOSFET For switching circuits Unit: mm • Features High-speed switching Low ON resistance Ron Incorporating a built-in gate protection-diode VDSS 25 V Gate-source surrender voltage VGSS
|
Original
|
PDF
|
2SK4029
|
K4021
Abstract: 2SK4021
Text: 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4021 Switching Regulators and DC-DC Converter Applications Motor Drive Applications 1.5 ± 0.2 Unit: mm 5.2 ± 0.2 z Low drain-source ON-resistance: RDS (ON) = 0.8 Ω (typ.)
|
Original
|
PDF
|
2SK4021
K4021
2SK4021
|
K4021
Abstract: 2SK4021
Text: 2SK4021 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4021 Switching Regulator and DC/DC Converter Applications Motor Drive Applications １．５±０．２ Unit: mm : IDSS = 100 µA (max) (VDS = 250 V) z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
|
Original
|
PDF
|
2SK4021
K4021
2SK4021
|
Untitled
Abstract: No abstract text available
Text: 2SK4023 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOS V 2SK4023 Switching Regulator, DC/DC Converter １．５±０．２ Unit: mm ５．２±０．２ １．６ 4 V gate drive Low drain-source ON-resistance: RDS (ON) = 4.0 Ω (typ.)
|
Original
|
PDF
|
2SK4023
|
2SK4029
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK4029 Silicon N-channel MOSFET For switching circuits Unit: mm • Features High-speed switching Low ON resistance Ron Incorporating a built-in gate protection-diode
|
Original
|
PDF
|
2002/95/EC)
2SK4029
2SK4029
|
K4026
Abstract: 2SK4026
Text: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications １．５±０．２ Unit: mm ５．２±０．２ Features １．６ Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)
|
Original
|
PDF
|
2SK4026
K4026
2SK4026
|
K4026
Abstract: 2SK4026
Text: 2SK4026 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS V 2SK4026 Switching Regulator Applications １．５±０．２ Unit: mm ５．２±０．２ １．６ Low drain-source ON-resistance: RDS (ON) = 6.4 Ω(typ.) High forward transfer admittance: |Yfs| = 0.85 S (typ.)
|
Original
|
PDF
|
2SK4026
K4026
2SK4026
|
2SK425
Abstract: 2sk414 2sk495 2SK405 2SK500 2SK426 2SK431 2SK470 2SK424 2SK433
Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SK401 2SK402 2SK403 2SK404 2SK405 2SK406 2SK407 2SK408 2SK409 2SK410 2SK411 2SK412 2SK413 2SK414 2SK415 2SK416 2SK417 2SK418
|
Original
|
PDF
|
2SK401
2SK402
2SK403
2SK404
2SK405
2SK406
2SK407
2SK408
2SK409
2SK410
2SK425
2sk414
2sk495
2SK405
2SK500
2SK426
2SK431
2SK470
2SK424
2SK433
|
2SK403
Abstract: 2SK402
Text: H I T A C H I / { O P TO EL EC TR ONIC S} -^RTSö^U b 7 3 H i ! A CJH 1TO JP IT J L L E U I K U N 1 C S J - D e | 4 4 ^ 2 0 5 73C 10050 D O I G O S D D T “ 37-^3 2SK402,2SK403 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER
|
OCR Scan
|
PDF
|
2SK402
2SK403
0010QS2
2SK403
|
2SK403
Abstract: 2SK402 Hitachi Scans-001 2SK40-3
Text: H I T A C H I / { O P TO EL EC TR ONIC S} -^RTSö^U b 7 3 H i ! A CJH 1TO JP IT J L L E U I K U N 1 C S J - D e | 4 4 ^ 2 0 5 73C 10050 D O I G O S D D T “ 37-^3 2SK402,2SK403 SILICON N-CHANNEL MOS FET HIGH SPEED POWER SW ITCHING. HIGH FREQUENCY POWER AMPLIFIER
|
OCR Scan
|
PDF
|
2SK402
2SK403
0010QS2
2SK403
Hitachi Scans-001
2SK40-3
|
