2SK338 Search Results

2SK338 Result Highlights (5)

Part	Manufacturer	Description
2SK3386-Z-AZ	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 34A 21Mohm Mp-3Z/To-252
2SK3386(0)-Z-E1-AZ	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 34A 21Mohm Mp-3Z/To-252
2SK3385-Z-E2-AZ	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 30A 28Mohm Mp-3Z/To-252
2SK3386-Z-E1-AZ	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 34A 21Mohm Mp-3Z/To-252
2SK3385(0)-Z-E1-AY	Renesas Electronics Corporation	Nch Single Power Mosfet 60V 30A 28Mohm Mp-3Z/To-252

2SK338 Price and Stock

Filter by Manufacturer


Toshiba America Electronic Components 2SK3388(TE24L,Q) MOSFET N-CH 250V 20A 4TFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3388(TE24L,Q)	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation 2SK3386(0)-Z-E1-AZ TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3386(0)-Z-E1-AZ	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation 2SK3385(0)-Z-E1-AZ TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK3385(0)-Z-E1-AZ	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Renesas Electronics Corporation 2SK3386-Z-AZ 2SK3386-Z - Small Signal Field-Effect Transistor, 34A, 60V, N-Channel MOSFET '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	2SK3386-Z-AZ		243		1	1 $0.9778 10 $0.9778 100 $0.9191 1000 $0.8311 10000 $0.8311	Buy Now
Renesas Electronics Corporation 2SK3386 N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	2SK3386		179			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more 2SK338 price and stock on Findchips.com

2SK338 Datasheets (27)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK338	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SK3380	Hitachi Semiconductor	Silicon N Channel MOS FET	Original	PDF
2SK3380	Hitachi Semiconductor	Silicon N Channel MOS FET High Speed Switching	Original	PDF
2SK3380	Renesas Technology	Silicon N Channel MOS FET High Speed Switching	Original	PDF
2SK3385	Kexin	N-Channel MOSFET	Original	PDF
2SK3385	NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	Original	PDF
2SK3385	NEC	Switching N-Channel Power MOS FET Industrial Use	Original	PDF
2SK3385	TY Semiconductor	N-Channel MOSFET - TO-252	Original	PDF
2SK3385(0)-Z-E1-AZ	Renesas Electronics America	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR	Original	PDF
2SK3385-Z	NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	Original	PDF
2SK3385-Z	NEC	Switching N-Channel Power MOS FET Industrial Use	Original	PDF
2SK3386	Kexin	N-Channel MOSFET	Original	PDF
2SK3386	NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	Original	PDF
2SK3386	NEC	Switching N-Channel Power MOS FET Industrial Use	Original	PDF

2SK3386	TY Semiconductor	N-Channel MOSFET - TO-252	Original	PDF
2SK3386(0)-Z-E1-AZ	Renesas Electronics America	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR	Original	PDF
2SK3386-Z	NEC	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE	Original	PDF
2SK3387	Toshiba	FETs - Nch 60V	Original	PDF
2SK3387	Toshiba		Original	PDF
2SK3387	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF

2SK338 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
D144 Abstract: 2SK3386 2SK3386-Z Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 2SK3386-Z TO-252 designed for high current switching applications.	Original	2SK3386 2SK3386 O-251 2SK3386-Z O-252 O-251/TO-252 O-251) 120ce D144 2SK3386-Z	PDF
K3389 Abstract: k338 2SK3389 Text: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 70 S (typ.)	Original	2SK3389 K3389 k338 2SK3389	PDF
k338 Abstract: 2SK3389 Text: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 70 S (typ.)	Original	2SK3389 k338 2SK3389	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3402 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3402 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 MP-3 2SK3386-Z TO-252 (MP-3Z) designed for high current switching applications.	Original	2SK3402 2SK3402 2SK3386 2SK3386-Z O-251 O-252 O-251/TO-252 O-251)	PDF
Untitled Abstract: No abstract text available Text: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4 V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)	Original	2SK3387	PDF
2SK3389 Abstract: No abstract text available Text: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) · High forward transfer admittance: \|Yfs\| = 70 S (typ.)	Original	2SK3389 2SK3389	PDF
2SK3385-Z Abstract: 2SK3385 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3385 TO-251 2SK3385-Z TO-252 designed for high current switching applications.	Original	2SK3385 2SK3385 O-251 2SK3385-Z O-252 O-251/TO-252 O-251) 2SK3385-Z	PDF
2SK3387 Abstract: K3387 Text: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)	Original	2SK3387 2SK3387 K3387	PDF
2SK3388 Abstract: No abstract text available Text: 2SK3388 東芝電界効果トランジスタシリコンNチャネルMOS形 π-MOSV 2SK3388 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: \|Yfs\| = 20 S (標準)	Original	2SK3388 SC-97 2SK3388	PDF
2SK3386 Abstract: 2SK3386-Z D1447 Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES	Original	2SK3386 2SK3386 O-251 2SK3386-Z O-252 O-251/TO-252 2SK3386-Z D1447	PDF
2SK3288 Abstract: 2SK3380 Hitachi DSA00333 Text: 2SK3380 Silicon N Channel MOS FET High Speed Switching ADE-208-806 Z 1st.Edition. June 1999 Features • Low on-resistance R DS =1.26 Ω typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. Outline SPAK	Original	2SK3380 ADE-208-806 2SK3288 2SK3380 Hitachi DSA00333	PDF
Untitled Abstract: No abstract text available Text: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: \|Yfs\| = 20 S (typ.)	Original	2SK3388	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 2SK3386-Z TO-252 designed for high current switching applications.	Original	2SK3386 2SK3386 2SK3386-Z O-251 O-252 O-251/TO-252 O-251)	PDF
2SK3385-Z Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3385 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3385 TO-251 MP-3 2SK3385-Z TO-252 (MP-3Z) designed for high current switching applications.	Original	2SK3385 2SK3385 2SK3385-Z O-251 O-252 O-251/TO-252 O-251)	PDF

M2SK3386 Abstract: 2SK3386 2SK3386-Z Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 MP-3 2SK3386-Z TO-252 (MP-3Z) designed for high current switching applications.	Original	2SK3386 2SK3386 O-251 2SK3386-Z O-252 O-251/TO-252 O-251) 120ems, M2SK3386 2SK3386-Z	PDF
2SK3288 Abstract: 2SK3380 DSA003644 Text: 2SK3380 Silicon N Channel MOS FET High Speed Switching ADE-208-806 Z 1st.Edition. June 1999 Features • Low on-resistance R DS =1.26 typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. Outline SPAK D 12 3	Original	2SK3380 ADE-208-806 2SK3288 2SK3380 DSA003644	PDF
K3387 Abstract: 2SK3387 Text: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)	Original	2SK3387 K3387 2SK3387	PDF
Untitled Abstract: No abstract text available Text: SMD Type Product specification 2SK3386 TO-252 MAX. VGS = 4.0 V, ID = 17A Low Ciss : Ciss = 2100 pF TYP. +0.1 0.80-0.1 Built-in gate protection diode 2.3 +0.1 0.60-0.1 0.127 max 3.80 RDS(on)2 = 36 m +0.8 0.50-0.7 +0.15 5.55-0.15 MAX. (VGS = 10 V, ID = 17A)	Original	2SK3386 O-252	PDF
2SK3385-Z Abstract: 2SK3385 D1447 Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES	Original	2SK3385 2SK3385 O-251 2SK3385-Z O-252 O-251/TO-252 2SK3385-Z D1447	PDF
"MARKING CODE S1" toshiba Abstract: No abstract text available Text: 2SK3387 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L2-π-MOSV 2SK3387 Switching Regulator, DC-DC Converter and Motor Drive Applications • • • • • Unit: mm 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)	Original	2SK3387 "MARKING CODE S1" toshiba	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET ★ DESCRIPTION ORDERING INFORMATION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 MP-3 2SK3386-Z TO-252 (MP-3Z) designed for high current switching applications.	Original	2SK3386 2SK3386 2SK3386-Z O-251 O-252 O-251/TO-252 O-251) 40ntrol	PDF
2SK3385-Z Abstract: M2SK3385 2SK3385 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3385 TO-251 MP-3 2SK3385-Z TO-252 (MP-3Z) designed for high current switching applications.	Original	2SK3385 O-251 2SK3385-Z 2SK3385 O-252 O-251/TO-252 O-251) 2SK3385-Z M2SK3385	PDF
dsi 3550 Abstract: dr 25 diode Text: T E N T A T IV E T O S H I B A 2SK3389 T OS HI BA F I E L D E F F E C T TRANSI STOR S I L I C O N N CHANNEL MOS T Y P E U - M 0 S 1 I 2 S K 3 3 8 9 INDUSTRIAL APPLICATIONS HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. _ UNIT:mm M1	OCR Scan	2SK3389 ID-38A dsi 3550 dr 25 diode	PDF
3773 P Abstract: 3773P 2SK338 transistor cc 5551 EK06 F530 24si Text: M O S Field E ffe c t P o w e r T ra n s is to r 2SK338 m i * jb e m B u i. j i m m High V oltage, High Speed, High C u rre n t Sw itching Industrial Use 2 S K 3 3 8 i i , B l i ± ^ N ^ - - v ^ ; H i i ^ ° ’7 - M O S F E T T , X 'f 'v f - > ti-Mm /P A C K A G E DIM ENSIO NS	OCR Scan	2SK338 3773 P 3773P 2SK338 transistor cc 5551 EK06 F530 24si	PDF

Privacy Settings

2SK338 Search Results

2SK338 Result Highlights (5)

2SK338 Price and Stock

Toshiba America Electronic Components 2SK3388(TE24L,Q)

Renesas Electronics Corporation 2SK3386(0)-Z-E1-AZ

Renesas Electronics Corporation 2SK3385(0)-Z-E1-AZ

Renesas Electronics Corporation 2SK3386-Z-AZ

Renesas Electronics Corporation 2SK3386

2SK338 Datasheets (27)

2SK338 Datasheets Context Search

D144

K3389

k338

Untitled

Untitled

2SK3389

2SK3385-Z

2SK3387

2SK3388

2SK3386

2SK3288

Untitled

Untitled

2SK3385-Z

M2SK3386

2SK3288

K3387

Untitled

2SK3385-Z

"MARKING CODE S1" toshiba

Untitled

2SK3385-Z

dsi 3550

3773 P