Untitled
Abstract: No abstract text available
Text: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings
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2SK3339-01
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230mH
Abstract: No abstract text available
Text: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings
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2SK3339-01
230mH
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mosfet 20a 300v
Abstract: No abstract text available
Text: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings
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2SK3338-01
mosfet 20a 300v
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2SK3332
Abstract: FM20 0V2006
Text: 2SK3332 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 150 V V BR DSS I D = 100µA, VGS = 0V VGS = +20V, –10V I DSS 100 µA VDS = 150V, VGS = 0V 2.0 V VDS = 10V, I D = 250µA S VDS = 10V, I D = 6A
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2SK3332
2SK3332
FM20
0V2006
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Untitled
Abstract: No abstract text available
Text: 2SK3335 N- Channel Silicon MOS FET Very High-Speed Switching TENTATIVE Features and Applications • Low ON-state resistance. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC Drain Current (Pulse)
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2SK3335
990126TM2fXHD
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2SK3332
Abstract: FM20
Text: 2SK3332 External dimensions 1 . FM20 Absolute Maximum Ratings Electrical Characteristics Symbol Ratings Unit Symbol VDSS 150 V V BR DSS I D = 100µA, VGS = 0V VGS = +20V, –10V I DSS 100 µA VDS = 150V, VGS = 0V 2.0 V VDS = 10V, I D = 250µA S VDS = 10V, I D = 6A
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2SK3332
FM100
2SK3332
FM20
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2SK3338-01
Abstract: L356
Text: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3338-01
2SK3338-01
L356
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2sk3337-01
Abstract: Silicon MOSFET 1000V
Text: 2SK3337-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3337-01
2sk3337-01
Silicon MOSFET 1000V
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L356
Abstract: No abstract text available
Text: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3338-01
L356
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Untitled
Abstract: No abstract text available
Text: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3339-01
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Untitled
Abstract: No abstract text available
Text: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3339-01
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2SK3339-01
Abstract: 230mH
Text: 2SK3339-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3339-01
2SK3339-01
230mH
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2SK3337-01
Abstract: N-Channel mosfet 600v 7A mosfet 600V 7A N-CHANNEL
Text: 2SK3337-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings
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2SK3337-01
150cc
2SK3337-01
N-Channel mosfet 600v 7A
mosfet 600V 7A N-CHANNEL
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Untitled
Abstract: No abstract text available
Text: 2SK3337-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings
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2SK3337-01
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2SK3335
Abstract: 256pF
Text: 注文コード No. N 7 2 1 6 2SK3335 No. N 7 2 1 6 50902 新 2SK3335 特長 N チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・4V 駆動。 絶対最大定格 Absolute Maximum Ratings / Ta=25℃
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2SK3335
2092B
IT04488
IT04486
IT04489
IT04491
IT04490
2SK3335
256pF
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2SK3337
Abstract: 2SK3337-01 mosfet 600V 7A N-CHANNEL L173
Text: 2SK3337-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3337-01
2SK3337
2SK3337-01
mosfet 600V 7A N-CHANNEL
L173
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2SK3335
Abstract: No abstract text available
Text: Ordering number : ENN7216 2SK3335 N-Channel Silicon MOSFET 2SK3335 Ultrahigh-Speed Switching Applications Features Low ON-resistance. 4V drive. unit : mm 2083B [2SK3335] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain
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ENN7216
2SK3335
2083B
2SK3335]
2092B
2SK3335
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ns102
Abstract: No abstract text available
Text: 2SK3337-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3337-01
ns102
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Untitled
Abstract: No abstract text available
Text: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 11.6±0.2 Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters
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2SK3338-01
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Untitled
Abstract: No abstract text available
Text: 2SK3338-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings
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2SK3338-01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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TRANSISTOR 187
Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
Text: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60
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2SJ424
2SJ425
2SK1177
2SK1179
2SK1180
2SK1181
2SK1183
2SK1184
2SK1185
2SK1186
TRANSISTOR 187
fkv550
2sk2943
2SK3460
2SK2710a
2SK3724
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2SK332
Abstract: 2SC4072 2sk333 2sk1806 2sk377 j 2sc3064
Text: SA* VO D P Dual P a c k a g e S e r i e s T h e S a n y o DP s e r i e s i n c l u d e t r an s is t or s , FETs for LF amp use as well as t r a n s i st o rs , F E Ts for HF amp use. B e c a u s e of t h e ir u n i q u e p a c k a g e design, they are c a p a b l e of b e i n g m o u n t e d e a s i l y and the c h a r a c t e r i s t i c s can
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2SK377
2SK597
2SK1806
2SA1237
2SC3064
5X-40
MT940128TR
2SK332
2SC4072
2sk333
2sk377 j
2sc3064
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2sk77
Abstract: 2SK772 2SK444 2sk20 2SK1332 2SK968 2sk332 2sk427 2SK36 2sk377 j
Text: SAftYO Smal 1-signal u r e s F e a FETs Case Outlines unit:mm SANYO:SMCP 1. Gate, 2. Source, 3. Drain. ♦ Very low noise figure »Large lYfsl * Low gate leak current ♦ Small-sized package permitting FET-used sets to be made smaller alt LF Amp.Low Noise,Analog Switch,Impedance Conversion Applications
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250mm
2SK212,
2SK315,
2SK544,
2SK669,
2SK1841
2SK2270.
2SK304,
2SK404,
2SK427,
2sk77
2SK772
2SK444
2sk20
2SK1332
2SK968
2sk332
2sk427
2SK36
2sk377 j
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