2SK3273-01MR
Abstract: No abstract text available
Text: 2SK3273-01MR N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±70A 70W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier
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2SK3273-01MR
2SK3273-01MR
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2SK3273-01MR
Abstract: No abstract text available
Text: 2SK3273-01MR N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±70A 70W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier
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2SK3273-01MR
2SK3273-01MR
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100UH
Abstract: 2SK3273 2SK3273-01MR
Text: 2SK3273-01MR N-channel MOS-FET Trench Gate MOSFET 60V > Features - 6,5mΩ ±70A 70W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier
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2SK3273-01MR
100UH
2SK3273
2SK3273-01MR
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POWER MOSFET
Abstract: mosfet power amplifier 2SK3273-01MR mosfet low vgs
Text: 2SK3273-01MR FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features TO-220F High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof Applications Switching regulators DC-DC converters
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2SK3273-01MR
O-220F
POWER MOSFET
mosfet power amplifier
2SK3273-01MR
mosfet low vgs
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Untitled
Abstract: No abstract text available
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIIB シリーズ FAP-IIIB series 超低オン抵抗・高アバランシェ耐量 Low-on resistance 形 式 Device type Volts Amps. 5x2 Amps. RDS on Max. ＊1 Ohms (Ω) 7 60
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F8006N
F7007N
2SK2806-01
2SK2807-01L,
2SK2808-01MR
2SK2687-01
2SK2688-01L,
2SK2689-01MR
2SK3363-01
2SK2890-01MR
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2sk3273
Abstract: 2SK3273-01MR
Text: DATE CHECKED NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without
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2SK3273-01MR
H04-004-05
H04-004-03
MS5F4374
2sk3273
2SK3273-01MR
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2SK1969
Abstract: 2SK1508 2SK2691 2SK2690 2SJ477 2SK2906 TO-220F15 2SK1390 2SK1083 2SK1881
Text: POWER MOS FET Feb-00 Quick Selection Guide F-I series High speed switching F-II series FAP-II series High speed switching Avalanche rated FAP-IIA series Low-on resistance Low typical capacitance F-III series P channel Avalanche rated F-III series FAP-III series
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Feb-00
2SK2248
2SK2249
2SK2048
O-220F15
2SK2808
2SK2890
2SK2689
2SK2891
2SK2893
2SK1969
2SK1508
2SK2691
2SK2690
2SJ477
2SK2906
TO-220F15
2SK1390
2SK1083
2SK1881
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mp2a5100
Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors
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RH011h
2007-10B120FIS
mp2a5100
ya868c12
YA868C15
2sk4004
YG865C10
F5049
diode 3a05
Diode SMD SJ 24
Diode SMD SJ 09
Diode SMD SJ 28
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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2SK3474-01
2SK3537-01MR
2SK3554-01
2SK3555-01MR
2SK3556-01L,
2SK3535-01
2SK3514-01
2SK3515-01MR
2SK3516-01L,
2SK3517-01
F5022
f5017h
F5021H
f5016h
2sk3528
2sk2696
F5038H
2SK3102-01R
2SK2696-01MR
F5018
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2SK2687-01
Abstract: 2SK2688-01L 2SK2689-01MR 2SK2806-01 2SK2807-01L 2SK2808-01MR 2SK2890-01MR 2SK2892-01R 2SK3363-01 F7007N
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET FAP-IIIB シリーズ FAP-IIIB series 超低オン抵抗・高アバランシェ耐量 Low-on resistance 形 式 Device type F8006N F7007N 2SK2806-01 2SK2807-01L, S 2SK2808-01MR 2SK2687-01
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F8006N
F7007N
2SK2806-01
2SK2807-01L,
2SK2808-01MR
2SK2687-01
2SK2688-01L,
2SK2689-01MR
2SK3363-01
2SK2890-01MR
2SK2687-01
2SK2688-01L
2SK2689-01MR
2SK2806-01
2SK2807-01L
2SK2808-01MR
2SK2890-01MR
2SK2892-01R
2SK3363-01
F7007N
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70A diode
Abstract: No abstract text available
Text: This m a te ria l and the in fo rm a tio n herein is the property o f Fuji Electric Co.,Ltd. They shall be neither re p rod u ced , copied, le nt, or disclosed in any way w h a tso e ve r for the use of any third party nor used for the m a n u fa ctu rin g purposes w ith o u t
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2SK3273-01
MS5F4374
H04-004-05
H04-004-03
70A diode
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Untitled
Abstract: No abstract text available
Text: H04-004-05 T h is Fuji m ate ria l Electric and th e in fo rm a tio n C o.,Ltd. T h e y shall lent, or d is c lo s e d third party nor In used any w a y for the h e re in is t h e p roperty of be n e i t h e r r e p r o d u c e d , c o p ie d , w h a ts o e v e r for the
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H04-004-05
2SK3273-01MR
O-22QF
H04-004-03
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