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    2SK3147S Search Results

    2SK3147S Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3147STR-E Renesas Electronics Corporation Nch Single Power Mosfet 100V 5A 130Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation

    2SK3147S Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK3147(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK3147S Kexin N-Channel MOSFET Original PDF
    2SK3147(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147S Renesas Technology SMD, High Speed Power Amplifier, 100V 5A 20W, MOS-FET N-Channel enhanced Original PDF
    2SK3147S Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK3147S TY Semiconductor N-Channel MOSFET - TO-252 Original PDF
    2SK3147STL-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK3147S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3147S

    Abstract: No abstract text available
    Text: IC MOSFET SMD Type Silicon N Cannel MOSFET 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1


    Original     		PDF 2SK3147S O-252 2SK3147S

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3147S TO-252 Features Low on-resistance typ. +0.15 1.50-0.15 RDS = 0.1 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 2.3 +0.1 0.60-0.1 3.80 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1


    Original     		PDF 2SK3147S O-252

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    2SK3147

    Abstract: 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    2SK3147

    Abstract: 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: 2SK3147 L , 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1072-0200 (Previous: ADE-208-731) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source


    Original     		PDF 2SK3147 REJ03G1072-0200 ADE-208-731) PRSS0004ZD-B PRSS0004ZD-C 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C

    2SK3147

    Abstract: 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: 2SK3147 L , 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1072-0300 Rev.3.00 Aug 17, 2009 Features • Low on-resistance RDS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF 2SK3147 REJ03G1072-0300 PRSS0004ZD-B PRSS0004ZD-C 2SK3147L-E 2SK3147STL-E PRSS0004ZD-B PRSS0004ZD-C