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    Panasonic Electronic Components 2SK275100L

    JFET N-CH 10MA MINI3-G1
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    2SK2751 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK2751 Panasonic TRANS JFET N-CH 0.0047A 3MINI3-G1 Original PDF
    2SK2751 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK2751 Panasonic N-Channel Junction FET Original PDF
    2SK2751 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK2751 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK275100L Panasonic JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 10MA 200MW MINI-3 Original PDF

    2SK2751 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For impedance conversion in low frequency For pyroelectric sensor • Package ■ Features


    Original     		PDF 2002/95/EC) 2SK2751

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For pyroelectric sensor 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 0.4±0.2


    Original     		PDF 2002/95/EC) 2SK2751

    2SK2751

    Abstract: JISC7030
    Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05


    Original     		PDF 2SK2751 2SK2751 JISC7030

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET  FEATURES * Low noise-figure NF . * High gate to drain voltage VGDO.  APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor.  ORDERING INFORMATION


    Original     		PDF 2SK2751 2SK2751G-AE3-R 2SK2751G-AL3-R OT-23 OT-323 QW-R206-067

    "N-Channel JFET"

    Abstract: list of n channel fet Jfet n-channel JFET sot23 JFET application note 2SK2751 pyro
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET „ FEATURES * Low noise-figure NF . * High gate to drain voltage VGDO. „ APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number:2SK2751L


    Original     		PDF 2SK2751 2SK2751L 2SK2751-AE3-R 2SK2751L-AE3-R 2SK2751-AL3-R 2SK2751L-AL3-R OT-23 OT-323 QW-R206-067 "N-Channel JFET" list of n channel fet Jfet n-channel JFET sot23 JFET application note 2SK2751 pyro

    2SK2751

    Abstract: n-channel JFET sot23
    Text: UTC 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET FEATURES *Low noise-figure NF . *High gate to drain voltage VGDO. APPLICATIONS *For impedance conversion in low frequency. *For pyroelectric sensor. 1 2 MARKING SYMBOL 3 HS SOT-23 1: DRAIN 2: SOURCE 3: GATE


    Original     		PDF 2SK2751 OT-23 QW-R206-067 2SK2751 n-channel JFET sot23

    2SK2751

    Abstract: JISC7030
    Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.65) ● Low noise-figure (NF) ● High gate to drain voltage VGDO


    Original     		PDF 2SK2751 2SK2751 JISC7030

    2SK2751

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET For impedance conversion in low frequency For pyroelectric sensor • Package Th an W is k y Th e a pro ou Fo an po du fo


    Original     		PDF 2002/95/EC) 2SK2751 2SK2751

    2SK2751

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For impedance conversion in low frequency For pyroelectric sensor ue pl d in an c


    Original     		PDF 2002/95/EC) 2SK2751 2SK2751

    2SK2751

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SK2751 N-CHANNEL JFET N-CHANNEL JUNCTION FET „ FEATURES * Low noise-figure NF . * High gate to drain voltage VGDO. „ APPLICATIONS * For impedance conversion in low frequency. * For pyroelectric sensor. *Pb-free plating product number:2SK2751L


    Original     		PDF 2SK2751 2SK2751L 2SK2751-AE3-R 2SK2751L-AE3-R 2SK2751-AL3-R 2SK2751L-AL3-R OT-23 OT-323 QW-R206-087 2SK2751

    Untitled

    Abstract: No abstract text available
    Text: 2SK2751 Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency For pyro-electric sensor +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 Rating VGDS – 40 V Drain current ID ±10


    Original     		PDF 2SK2751 C7030,

    2SK2751

    Abstract: JISC7030
    Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05


    Original     		PDF 2SK2751 2SK2751 JISC7030

    2SK2751

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET For impedance conversion in low frequency For pyroelectric sensor • Package ■ Features • Low noise-figure NF • High gate-drain voltage (Source open) VGDO


    Original     		PDF 2002/95/EC) 2SK2751 2SK2751

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 ● Low noise-figure (NF) ● High gate to drain voltage VGDO


    Original     		PDF 2SK2751

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-channel junction FET For impedance conversion in low frequency For pyroelectric sensor • Package ■ Features • Low noise-figure NF • High gate-drain voltage (Source open) VGDO


    Original     		PDF 2002/95/EC) 2SK2751 SJF00016DED

    2SK2751

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK2751 Silicon N-channel junction FET Unit: mm For impedance conversion in low frequency For pyroelectric sensor 0.40+0.10 –0.05 (0.95) (0.95) 1.9±0.1 0.4±0.2 5˚ 2.90+0.20 –0.05 Unit −40 V Drain current ID 10


    Original     		PDF 2SK2751 2SK2751

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    2SK3585

    Abstract: Infrared-Sensor 2SK3578 2SK3584 2sk0301 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent
    Text: FETs, IPD, IGBTs, GaAs MMICs • Power Transistor Arrays F-MOS FETs Application Part No. Non-contact solenoid drive. Motor drive. Control equipment switching equipment. ✽: Ta=25 °C PUB4753 (PU7457) PUB4701 PUB4702 Absolute Maximum Ratings (TC = 25 °C)


    Original     		PDF PUB4753 PU7457) PUB4701 PUB4702 450/600o 380/680o SIP10-A1 2SK0301 2SK663) 2SK301) 2SK3585 Infrared-Sensor 2SK3578 2SK3584 2SK3583 PUB4701 2SK1104 2SK1860 2SK3585 equivalent

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Silicon Junction FETs Small Signal 2SK2751 Silicon N-Channel Junction For impedance conversion in low frequency For pyro-electric sensor 2 . 8 - 0.3 + 0.25 1 . 5 - 0.05 0.65±0.15 • Features Parameter Gate-Drain voltage Drain current Gate current


    OCR Scan     		PDF 2SK2751 O-236 SC-59 C7030,

    3BZ marking

    Abstract: C703 pyro sensor 2SK2751 C7030 "Field Effect Transistor" JK PANASONIC
    Text: Panasonic S ilic o n Junction FETs S m all Sign al 2SK2751 Silicon N -C h an n el Junction For im pedance conversion in low frequency For pyro-electric sensor • Features • Low noise-figure (NF) • High gate-drain voltage V g d o • Downsizing of sets by mini-type package and automatic insertion by


    OCR Scan     		PDF 2SK2751 O-236 SC-59 C7030, 3BZ marking C703 pyro sensor 2SK2751 C7030 "Field Effect Transistor" JK PANASONIC

    k3025

    Abstract: K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576
    Text: GaAs MMIC Microwave Monolithic IC # For Amplifiers U /V CATV Wide Band Amp. Buffer Amp. Type No. NF (dB) PG (dB) Measuring Condition Circuit Configuration O .—. > ^ Application (mA) GN1010 2.0 9 3 25 100 to 2000 GN1042 2.2 10 3 40 50 to 800 GN1044 1.8


    OCR Scan     		PDF GN1010 GN1042 GN1044 GN8061 GN8062 01076B N01077N 01087B 01091B 01093B k3025 K3192 k3047 K2538 k2960 K2923 K3035 K3165 K3028 k2576