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    2SK2684 Search Results

    2SK2684 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2684STL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 30A 28Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation

    2SK2684 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2684 Hitachi Semiconductor Power Mosfet 5th Generation Original PDF
    2SK2684 Hitachi Semiconductor Silicon N Channel DV-L MOS FET High Speed Power Switching Original PDF
    2SK2684 Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2684(L) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2684(L) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2684L Renesas Technology Silicon N Channel DV-L MOS FET High Speed Power Switching Original PDF
    2SK2684L Renesas Technology MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.035; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 750; toff ( us) typ: 0.085; Package: LDPAK (L) Original PDF
    2SK2684L Renesas Technology Silicon N Channel DV-L MOS FET High Speed Power Switching Original PDF
    2SK2684L-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2684(S) Hitachi Semiconductor Power switching MOSFET Original PDF
    2SK2684(S) Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    2SK2684S Renesas Technology Silicon N Channel DV-L MOS FET High Speed Power Switching Original PDF
    2SK2684S Renesas Technology MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.035; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 750; toff ( us) typ: 0.085; Package: LDPAK (S)- (1) Original PDF
    2SK2684S Renesas Technology Silicon N Channel DV-L MOS FET High Speed Power Switching Original PDF
    2SK2684STL-E Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF

    2SK2684 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SK2684

    Abstract: Hitachi DSA00117
    Text: 2SK2684 L , 2SK2684(S) Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-542(Z) 1st. Edition September 1997 Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching


    Original     		2SK2684 ADE-208-542 D-85622 Hitachi DSA00117 PDF

    Hitachi DSA00281

    Abstract: No abstract text available
    Text: 2SK2684 L , 2SK2684(S) Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-542 (Z) 1st. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline


    Original     		2SK2684 ADE-208-542 D-85622 Hitachi DSA00281 PDF

    2SK2684

    Abstract: 2SK2684L-E 2SK2684STL-E PRSS0004AE-A
    Text: 2SK2684 L , 2SK2684(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1022-0200 (Previous: ADE-208-542) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current


    Original     		2SK2684 REJ03G1022-0200 ADE-208-542) PRSS0004AE-A PRSS0004AE-B 2SK2684L-E 2SK2684STL-E PRSS0004AE-A PDF

    2SK2684

    Abstract: Hitachi DSA00238
    Text: 2SK2684 L , 2SK2684(S) Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-542 1st. Edition Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline LDPAK 4 D


    Original     		2SK2684 ADE-208-542 Hitachi DSA00238 PDF

    Hitachi DSA002758

    Abstract: No abstract text available
    Text: 2SK2684 L , 2SK2684(S) Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-542 1st. Edition Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline 2SK2684(L), 2SK2684(S)


    Original     		2SK2684 ADE-208-542 Hitachi DSA002758 PDF

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 Z 1st. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220CFM


    Original     		2SK2736 ADE-208-544 220CFM D-85622 Hitachi DSA00276 PDF

    2SK3235

    Abstract: 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053
    Text: HAT2038R/HAT2038RJ Silicon N Channel Power MOS FET High Speed Power Switching ADE-208-666C Z 4th. Edition Feb. 1999 Features • • • • For Automotive Application ( at Type Code “J “) Low on-resistance Capable of 4 V gate drive High density mounting


    Original     		HAT2038R/HAT2038RJ ADE-208-666C HAT2038R HAT2038RJ pdf\7420e HAT1044M HAT1053M 2SK3235 2SK3379 Hitachi DSA00276 HAT1040T 2SJ517 2SK1835 TO220CFM 2SK3421 HAT1053 PDF

    Hitachi DSA00276

    Abstract: No abstract text available
    Text: 2SK2735 L , 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 (Z) 1st. Edition Sep. 1997 Features • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2


    Original     		2SK2735 ADE-208-543 D-85622 Hitachi DSA00276 PDF

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent PDF

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557 PDF

    TO220CFM

    Abstract: 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R
    Text: Power Mosfet 5th Generation The Performance Revolution Literature Order Number Revision Number 5/14/97 Hitachi Europe, Ltd. European Marketing Power Mosfet 5th Generation - The Performance Revolution 1.1 RDS ON 4.5m Ohm - A new standard has been set With the introduction of the new D5-Series HITACHI started a new age of RDS (ON)


    Original     		2SK2927* O-220 2SK2928* 2SK2929* 2SK2930* 2SK2931* TO220CFM 2SK2554 TO-220CFM to-3p(i)d series HAT1020R HAT1021R HAT1023R HAT1024R HAT1026R HAT2016R PDF

    2SK2684

    Abstract: 2SK2684L-E 2SK2684STL-E PRSS0004AE-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj PDF

    2SK2684

    Abstract: 2SK2735 DPAK-2 PACKAGE Hitachi DSA00238 2SK273
    Text: 2SK2735 L , 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-543 1st. Edition Features • Low on-resistance R DS = 20 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline DPAK–2 4 4 D 1 2


    Original     		2SK2735 ADE-208-543 2SK2684 DPAK-2 PACKAGE Hitachi DSA00238 2SK273 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK2684

    Abstract: No abstract text available
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


    Original     		REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original     		HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2684 L , 2SK2684(S) Silicon N Channel D V -L MOS FET High Speed Power Switching HITACHI ADE-208-542(Z) 1st. Edition September 1997 Features • Low on-resistance RDS(on) = 20 m il typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching


    OCR Scan     		2SK2684 ADE-208-542 2SK2684Ã PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2684 L , 2SK2684(S) Silicon N Channel DV-L MOS FET High Speed Power Switching HITACHI Features • Low on-resistance RDS(on) = 20 mfì typ. (VGS = 10V, ID = 15 A) • 4-V gate drive devices. • High speed switching Outline LDPAK ADE-208-542(Z) 1st. Edition


    OCR Scan     		2SK2684 ADE-208-542 D-85622 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK2684 L , 2SK2684(S) Silicon N Channel DV-L MOS FET High Speed Power Switching HITACHI Features • Low on-resistance ^DS(on) = 20 m£2 typ. (V os = 10V, I D = 15 A) • 4V gate drive devices. • High speed switching Outline LDPAK 1018 ADE-208-542 1st. Edition


    OCR Scan     		2SK2684 ADE-208-542 2SK2684Body PDF

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


    OCR Scan     		2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44 PDF

    ld 1086 18

    Abstract: No abstract text available
    Text: 2SK2736 Silicon N Channel DV-L MOS FET High Speed Power Switching HITACHI Features Low on-resistarice R DS nn 20 mil: typ. (VGS = 10V, Iu = 15 A) • 4V gate drive devices. • High speed switching Outline TQ -220C FM 1. Gate 2. Drain 3. Source 1084 ADE-208-544


    OCR Scan     		2SK2736 ADE-208-544 -220C 2SK2684 ld 1086 18 PDF