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Rochester Electronics LLC 2SK2595AXTB-E N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SK2595AXTB-E	Bulk			33	1 - 10 - 100 $9.1 1000 $9.1 10000 $9.1	Buy Now
Renesas Electronics Corporation 2SK2595AXTB-E - Bulk (Alt: 2SK2595AXTB-E)
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Avnet Americas	2SK2595AXTB-E	Bulk		4 Weeks	40	1 $9.18 10 $9.18 100 $9.18 1000 $9.18 10000 $9.18	Buy Now
Rochester Electronics	2SK2595AXTB-E		13,000		1	1 $9.18 10 $9.18 100 $8.63 1000 $7.81 10000 $7.81	Buy Now

2SK2595AX Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2SK2595AX		Renesas Technology	FET Transistor, Silicon N-Channel MOS FET UHF Power Amplifier, Tape and Reel		Original	PDF

2SK2595AX Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK2595 Abstract: 2SK2595AXTB-E RP8P *0821 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
Untitled Abstract: No abstract text available Text: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0200Z Previous ADE-208-1366 (Z Rev.2.00 Apr.20.2004 Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 37.3 dBm, ηD = 50%min. (f = 836.5 MHz) • Compact package capable of surface mounting	Original	PDF	2SK2595 REJ03G0206-0200Z ADE-208-1366
2SK2595 Abstract: 2SK2595AX marking 0836 Text: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0300 Rev.3.00 Aug.26.2004 Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. f = 836.5 MHz • Compact package capable of surface mounting	Original	PDF	2SK2595 REJ03G0206-0300 2SK2595 2SK2595AX marking 0836
2SK2595AXTB-E Abstract: 2SK2595AXTB 2sk2595 2SK2595AX b 857 RENESAS marking code u 172 zo 107 Text: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0401 Rev.4.01 Jan 30, 2006 Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. f = 836.5 MHz • Compact package capable of surface mounting	Original	PDF	2SK2595 REJ03G0206-0401 PLSS0003ZA-A 2SK2595AXTB-E 2SK2595AXTB 2sk2595 2SK2595AX b 857 RENESAS marking code u 172 zo 107
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
2SK2595AX Abstract: u 172 2SK2595 Text: 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0400 Rev.4.00 Feb.14.2005 Features • High power output, High gain, High efficiency PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. f = 836.5 MHz • Compact package capable of surface mounting	Original	PDF	2SK2595 REJ03G0206-0400 PLSS0003ZA-A Chann-900 Unit2607 2SK2595AX u 172 2SK2595