2SK2561-01R
Abstract: No abstract text available
Text: 2SK2561-01R N-channel MOS-FET FAP-II Series 600V > Features - 1,2Ω 9A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators
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2SK2561-01R
2SK2561-01R
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2SK2568
Abstract: No abstract text available
Text: 2SK2568 Silicon N Channel MOS FET Application TO–3P High speed power switching Features • • • • Low on–resistance High speed switching Low drive current Suitable for switching regulator and DC–DC converter S 2 1 G 1 2 3 3 1. Gate 2. Source Flange
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2SK2568
2SK2568
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2SK2569
Abstract: Hitachi DSA001651
Text: 2SK2569 Silicon N-Channel MOS FET November 1996 Application Low frequency power switching Features • • • • Low on-resistance. RDS on = 2.6 Ω max. (at VGS = 4 V, ID = 100mA) 2.5V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source
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2SK2569
100mA)
2SK2569
Hitachi DSA001651
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Hitachi DSA00276
Abstract: No abstract text available
Text: 2SK2569 Silicon N-Channel MOS FET ADE-208-384 Z 1st. Edition Aug. 1995 Application Low frequency power switching Features • • • • Low on-resistance. R DS(on) = 2.6 max. (at V GS = 4 V, I D = 100mA) 2.5V gate drive device. Small package (MPAK). Outline
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2SK2569
ADE-208-384
100mA)
D-85622
Hitachi DSA00276
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2sk2564
Abstract: F8F60VX2 29mJ
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 600V 8A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2564
F8F60VX2)
FTO-220
00-200V
290mJ
2sk2564
F8F60VX2
29mJ
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HITACHI DIODE
Abstract: 2SK2568 Hitachi DSA00382
Text: 2SK2568 Silicon N-Channel MOS FET Preliminary Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 S 3 1. Gate 2. Drain
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2SK2568
HITACHI DIODE
2SK2568
Hitachi DSA00382
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2SK2569
Abstract: Hitachi DSA00395
Text: 2SK2569 Silicon N-Channel MOS FET ADE-208-384 1st. Edition Application Low frequency power switching Features • • • • Low on-resistance. R DS on = 2.6 max. (at V GS = 4 V, I D = 100mA) 2.5V gate drive device. Small package (MPAK). Outline MPAK 3 1
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2SK2569
ADE-208-384
100mA)
2SK2569
Hitachi DSA00395
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Hitachi DSA00276
Abstract: No abstract text available
Text: 2SK2568 Silicon N-Channel MOS FET ADE-208-1363A Z 2nd. Edition Mar. 2001 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline
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2SK2568
ADE-208-1363A
D-85622
Hitachi DSA00276
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F8F60VX2
Abstract: 2sk2564
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2564 F8F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V 8A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2564
F8F60VX2)
FTO-220
00-200V
290mJ
F8F60VX2
2sk2564
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2SK2563
Abstract: F4F60VX2 600V,4A DIODE
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 600V4A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.
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2SK2563
F4F60VX2)
FTO-220
600V4A
00-200V
110mJ
2SK2563
F4F60VX2
600V,4A DIODE
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2SK2569
Abstract: 2SK2569ZN-TL-E 2SK2569ZN-TR-E SC-59A
Text: 2SK2569 Silicon N Channel MOS FET REJ03G1018-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features • • • • Low on-resistance. RDS on = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK). Outline
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2SK2569
REJ03G1018-0300
PLSP0003ZB-A
2SK2569
2SK2569ZN-TL-E
2SK2569ZN-TR-E
SC-59A
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2SK2569
Abstract: 2SK2569ZN-TL-E 2SK2569ZN-TR-E SC-59A
Text: 2SK2569 Silicon N Channel MOS FET REJ03G1018-0200 Previous: ADE-208-384 Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance. RDS(on) = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK).
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2SK2569
REJ03G1018-0200
ADE-208-384)
PLSP0003ZB-A
2SK2569
2SK2569ZN-TL-E
2SK2569ZN-TR-E
SC-59A
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Untitled
Abstract: No abstract text available
Text: SHINDENGEN VZ Series Power MOSFET 2SK2560 F20F20VZ N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 200V 20A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.
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2SK2560
F20F20VZ
FTO-220
2-24V
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2SK2562-01R
Abstract: 2sk2562
Text: 2SK2562-01R N-channel MOS-FET FAP-II Series 800V > Features - 2,2Ω 7A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2562-01R
2SK2562-01R
2sk2562
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600V,4A DIODE
Abstract: 2SK2563 600V4A F4F60VX2 2a 400v mosfet
Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2563 F4F60VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 600V4A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.
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2SK2563
F4F60VX2)
FTO-220
600V4A
00-200V
110mJ
600V,4A DIODE
2SK2563
600V4A
F4F60VX2
2a 400v mosfet
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Untitled
Abstract: No abstract text available
Text: 2SK2569 Silicon N Channel MOS FET REJ03G1018-0300 Rev.3.00 Dec 27, 2006 Application High speed power switching Features • • • • Low on-resistance. RDS on = 2.6 Ω max. (at VGS = 4 V, ID = 100 mA) 2.5 V gate drive device. Small package (MPAK). Outline
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2SK2569
REJ03G1018-0300
PLSP0003ZB-A
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2SK2568
Abstract: 2SK2568-E PRSS0004ZE-A SC-65
Text: 2SK2568 Silicon N Channel MOS FET REJ03G1017-0300 Previous: ADE-208-1363 Rev.3.00 Sep 07, 2005 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter
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2SK2568
REJ03G1017-0300
ADE-208-1363)
PRSS0004ZE-A
2SK2568
2SK2568-E
PRSS0004ZE-A
SC-65
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CONTINENTAL DC-DC CONVERTER
Abstract: Hitachi DSA001651
Text: 2SK2568 Silicon N-Channel MOS FET Preliminary November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2
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2SK2568
D-85622
CONTINENTAL DC-DC CONVERTER
Hitachi DSA001651
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Untitled
Abstract: No abstract text available
Text: 2SK2568 Silicon N-Channel MOS FET HITACHI Preliminary November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Suitable for switching regulator and DC-DC converter Outline Flange
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2SK2568
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Untitled
Abstract: No abstract text available
Text: 2SK2569 Silicon N-Channel MOS FET HITACHI November 1996 Application Low frequency power switching Features • Low on-resistance. • R • 2.5V gate drive device. • Small package MPAK . ds („„, = Outline 2-6 & max. (at VGS = 4 V, ID= 100mA) 2SK2569
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2SK2569
100mA)
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Untitled
Abstract: No abstract text available
Text: 2SK2568 Silicon N-Channel MOS FET HITACHI Preliminary Application H igh speed pow er sw itching Features • Low on-resistance • H igh speed sw itching • Low drive current • Suitable for sw itching regulator and D C-DC converter Outline TO-3P G o 1 UJ
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2SK2568
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Untitled
Abstract: No abstract text available
Text: F U JI 2SK2562-01R N-channel MOS-FET FAP-II Series 800V > Features - 2 ,2 Q 7A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage Vgs = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2562-01R
20Kil)
150Characteristics
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VO5-10V
Abstract: No abstract text available
Text: F U JI e t s i o r i M 2SK2561-01R i e N-channel MOS-FET FAP-II Series 600V > Features 1,2a 9A > Outline Drawing TO-3PF - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Repetitive Avalanche Rated
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2SK2561-01R
VO5-10V
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Untitled
Abstract: No abstract text available
Text: 2SK2569 Silicon N-Channel MOS FET HITACHI Application Low frequency power switching Features • • • • Low on-resistance. RDS „nl = 2.6 Q. max. (at VGS = 4 V, ID = 100mA 2.5V gate drive device. Small package (M PAK). Outline MPAK '• 1 2 1. Source
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2SK2569
ADE-208-384
100mA)
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