Untitled
Abstract: No abstract text available
Text: 2SK2528-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2528-01
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2SK2696
Abstract: 2sk3264 2SK2850 2sk2850 DATASHEET 2SK2648 2sk2648 transistor 2SK2654 2sk2648 equivalent 2SK2100 2SK2647
Text: VDSS 650 to 1000 volts Series Package 650 F-II series T-Pack FAP-II series TO-220AB TO-220F15 Feb-00 Drain-source voltage VDSS Voltage 700 800 2SK2696 (5, 1.85) 2SK951 (2.5, 7.0) 2SK2397 (5, 2.3) 2SK2527 (5, 3.6) 2SK2528 (5, 3.6) TO-3PF FAP-IIA series T-pack
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O-220AB
O-220F15
Feb-00
2SK2696
2SK951
2SK2397
2SK2527
2SK2528
2SK2100
2SK2696
2sk3264
2SK2850
2sk2850 DATASHEET
2SK2648
2sk2648 transistor
2SK2654
2sk2648 equivalent
2SK2100
2SK2647
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2SK2528-01
Abstract: No abstract text available
Text: 2SK2528-01 N-channel MOS-FET FAP-II Series 900V > Features - 3,6Ω 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators
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2SK2528-01
900citances
2SK2528-01
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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F5022
Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01
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2SK3474-01
2SK3537-01MR
2SK3554-01
2SK3555-01MR
2SK3556-01L,
2SK3535-01
2SK3514-01
2SK3515-01MR
2SK3516-01L,
2SK3517-01
F5022
f5017h
F5021H
f5016h
2sk3528
2sk2696
F5038H
2SK3102-01R
2SK2696-01MR
F5018
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2SK2696
Abstract: 2SK2696-01MR 2SK1006-01MR 2SK1007-01 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK2519-01 2SK2520-01MR
Text: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET F-II / FAP-II シリーズ F-II / FAP-II series 高速スイッチング／アバランシェ耐量保証 High speed switching / Avalanche rated 形 式 Device type VDSS ID ID pulse
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2SK2519-01
2SK2520-01MR
2SK2521-01
2SK2522-01MR
2SK2849-01L,
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK1006-01MR
2SK2696
2SK2696-01MR
2SK1006-01MR
2SK1007-01
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK2519-01
2SK2520-01MR
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2SK1411
Abstract: 2SK1535 2SK1410 2SK1538 2SK1358 datasheet 2sk2082 2SK2397-01MR 2SK2475 2SK2370 2sk2225
Text: STI Type: 2SK1358 Notes: Breakdown Voltage: 900 Continuous Current: 9 RDS on Ohm: 1.4 Trans Conductance Mhos: 2.0 Trans Conductance A: 4.0 Gate Threshold min: 1.5 Gate Threshold max: 3.5 Resistance Switching ton: 80 Resistance Switching toff: 200 Resistance Switching ID: 4.0
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2SK1358
O-247
2SK1359
2SK1362
2SK2563
2SK2568
2SK1411
2SK1535
2SK1410
2SK1538
2SK1358 datasheet
2sk2082
2SK2397-01MR
2SK2475
2SK2370
2sk2225
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Untitled
Abstract: No abstract text available
Text: PU J1 2SK2528-01 N-channel MOS-FET ö t ö lS U 'U ä U K FAP-II Series 900V > Features 3,6 0 . 5A Outline Drawing TO-3P - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof
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2SK2528-01
10D0D
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2SK2528-01
Abstract: LFT 5A
Text: FU JI 2SK2528-01 N-channel MOS-FET ö ü J M e ir u ö L J K FAP-II Series 900V 3 ,6 Q 5A 80W > Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - V gs = ± 30V Guarantee - Avalanche Proof > Applications
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OCR Scan
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2SK2528-01
EE3fl715
0004b53
LFT 5A
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Untitled
Abstract: No abstract text available
Text: FU JI 2SK2528-01 N-channel MOS-FET FAP-II Series 900V > Features - 3 ,6 Q 5A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Avalanche Proof TO-3P 4.5 > Applications
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OCR Scan
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PDF
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2SK2528-01
0D04b53
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01
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2SK2519-01
2SK2520-01
2SK2521-01
2SK2522-01MR
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK1006-01MR
2SK1007-01
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01 MR 2SK1007-01 *2SK1009-01 2SK1386-01
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2SK2519-01
2SK2520-01MR
2SK2521-01
2SK2522-01MR
2SK2469-01MR
2SK2470-01MR
2SK2471-01
2SK2473-01
2SK1006-01
2SK1007-01
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2SK2528-01
Abstract: SC-65 fus20
Text: S P E C I F I C A T I O N DEVICE NAME : TYPE NAME : P o w e r M O SFE T 2 S K 2 5 2 8 - Q 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. D AT E NAME APPROVED Fiiji Electric Co^lid DRAWN CHECKED o' z o 3: o
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2SK2528-01
0257-R-004a
0257-R-003a
2SK2528-01
SC-65
fus20
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TO-3P Jedec package outline
Abstract: 2sk1507 TO-220F15 K1015 TO220F15 2SK1016 2SK1015-01 2SK1916 high voltage mosfet, to-220 case 2SK956-01 equivalent
Text: 2SK1507-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features j SERIES j Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • V GSS = ± 30V Guarantee • Avalanche-proof
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2SK1507-01
SC-67
O-220F15
2SK1081-01
2SK956-01
2SK1385-01R
2SK1548-01
2SK1024-01
O-220
TO-3P Jedec package outline
2sk1507
TO-220F15
K1015
TO220F15
2SK1016
2SK1015-01
2SK1916
high voltage mosfet, to-220 case
2SK956-01 equivalent
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Untitled
Abstract: No abstract text available
Text: MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts D evioe _ l Y R e _ 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2S K 2469-01M R 2S K 247 0-0 1M R 2SK24tl~01 £ S K 2 4 7 3 -& t 2S K 10 o 6-o i M r
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2SK2519-01
2SK2520-01
2SK2521-01
2SK2522-01MR
2469-01M
2SK24tl
2SK1007-01
2SK1009-01
2SK1386-01
2SK2523-01
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EH12
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : TYPE NAME : Power MOSFET 2 S K 2 5 2 8 - 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED P i ü i P l â f ' l r i / ' r V k 1i r l CHECKED DWG.N0. DRAWN 1/ 11
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OCR Scan
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PDF
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2SK2528-01
0257-R-004a
0257-R-003a
EH12
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2sk1507
Abstract: TO-220F15 2SK1916-01R K1102 TO220F15 2SK1820-01L 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK2469-01MR
Text: <§ MOSFETs FAP-II Series - VGS ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness 200 - 900 Volts Device Type 2SK2519-01 2SK2520-01 MR 2SK2521-01 2SK2522-01MR 2SK2469-01MR 2SK2470-01MR 2SK2471-01 2SK2473-01 2SK1006-01MR 2SK1007-01 2SK1009-01 2SK1386-01
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OCR Scan
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2SK2519-01
O-220
2SK2520-01
O-220F15
2SK2521-01
2SK2522-01MR
O-220
2SK2469-01MR
2sk1507
TO-220F15
2SK1916-01R
K1102
TO220F15
2SK1820-01L
2SK1006-01MR
2SK1007-01
2SK1009-01
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Untitled
Abstract: No abstract text available
Text: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,
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OCR Scan
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PDF
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2SK2770-01
2SK2272-01R
2SK2528-01
2SK1212-01R
2SK1944-01
2SK2653-01R
2SK727-01
2SK1217-01R
2SK1082-01
2SK2655-01R
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2SK2696-01MR
Abstract: No abstract text available
Text: /\°7 -M 0 S F E T /P o w e r MOSFETs J K F-ll / FAP-II > V - X » Ä Voss F-ll / FAP-II series Continued to to {pulse) R b s (on) AftpS. Max. * 1 Ohms iu) Watts 12 36 92 20 20 7 7 10 20 6 20 20 20 2.2 0.74 0.25 1.85 1.85 7.0 7.0 4.5 2.3 8.5 3.6 3.6 3.6
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2SK1008-01
2SK1014-01
2SK1020
2SK2695-01
2SK2696-01MR
2SK951-MR
2SK952
2SK1552-01L,
2SK2397-01MR
2SK957-MR
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