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    2SK2383 Search Results

    2SK2383 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK2383 Panasonic N-Channel Power F-MOS FET Original PDF
    2SK2383 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK2383 Panasonic Silicon N-Channel Power F-MOS FET Original PDF
    2SK23-8/3 Unknown Cross Reference Datasheet Scan PDF

    2SK2383 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2383

    Abstract: 7a DIODE
    Text: Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown M Di ain sc te on na tin nc ue e/ d unit: mm 15.5±0.5 10.0 V ±30


    Original     		PDF 2SK2383 2SK2383 7a DIODE

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm ■ Applications Pulse Avalanche energy capacity Allowable power


    Original     		PDF 2SK2383

    2SK2383

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 15.5±0.5 Drain to Source breakdown voltage VDSS 500 V Gate to Source voltage


    Original     		PDF 2SK2383 2SK2383

    2SK238

    Abstract: 2SK2383
    Text: Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm 15.5±0.5 Drain to Source breakdown voltage VDSS 500 V Gate to Source voltage


    Original     		PDF 2SK2383 2SK238 2SK2383

    2SK2383

    Abstract: No abstract text available
    Text: Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown unit: mm V ±30 V DC ID ±13 A Pulse IDP ±26 A EAS* 170 mJ dissipation


    Original     		PDF 2SK2383 2SK2383

    Untitled

    Abstract: No abstract text available
    Text: 2SK2383 Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS Unit : mm • Features energy capability guaranteed 10.0 2.0 1.2 secondary breakdown ● Solenoid relay 2.0 4.0 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 equipment ● Switching 5.5±0.3 3.3±0.3 0.7±0.1


    Original     		PDF 2SK2383

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    2sk2324

    Abstract: 2SK2124 2SK2127 2sk2323
    Text: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22C)F(a) TO-220E (D55) (D59) 2SK1605 2SK2123 2SK1606 TOP-3(a) (D60) TOP-3E (D65) 2SK2125 2SK1608 2SK2126 2SK1609 2SK2127 R o S 'ù n ; Id (A) 2SK2032 2SK2571 500 2SK1610 2SK2383 550 2SK2047 max. ( ü )


    OCR Scan     		PDF O-22C O-220E 2SK1605 2SK1606 2SK2123 2SK2124 2SK1607 2SK2032 2SK2571 2SK2509 2sk2324 2SK2127 2sk2323

    Untitled

    Abstract: No abstract text available
    Text: Panasonic Power F-MOS FETs 2SK2383 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown t # ■ Applications • • • • • Non-contact relay


    OCR Scan     		PDF 2SK2383

    2SK2324

    Abstract: TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323
    Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 TO-220E D59 Relay DC-DC D48 converter D59 Solenoid D63 Control TC)-220F(a)


    OCR Scan     		PDF 2SK758 O-220F 2SK963 2SK1478 A2SK2122 O-220E 2SK1036 2SK766 2SK2324 TO-220E 2SK1609 2SK1614 2SK2129 220E 2SK1606 2SK1611 2sk2128 2SK2323

    OF03

    Abstract: 2SK1263 2SK2377
    Text: Field Effect Transistors • Power F-MOS FETs Line-up Vgs =10V \ Vdss (V) \ to 60 80 100 150 170 200 250 450 500 550 600 800 900 \ (A) \ 1 A2SK2277 Mini Power 1.0 2SK2014 U Type 10 ★2SK2047 I Type a.o (Id=1.2A) ★2SK1834 220Fro ★2SK1980 N Type 7o ★ A2SK2128


    OCR Scan     		PDF A2SK2277 2SK2014 2SK2047 2SK1834 220Fro 2SK1980 A2SK2128 A2SK2125 2SK1833 2SK2509 OF03 2SK1263 2SK2377

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    2SK2324

    Abstract: 220E 2SK2129 2SK76 2sk203 2SK1606 2sk2128 2SK996 2SK1036 2SK1331
    Text: Field Effect Transistors • Power F-MOS FETs continued Type No. Package No. Application Absolute Maximum Ratinqs (Ta = 2 5 °C) Pd Vdss Vgss Id (T c = 2 5 *C) (V) (W) (A) (V) 5 40 Electrical Characteristics (Tc = 2 5 ’C) ti td (off) ton RoS(on) 1Y h I


    OCR Scan     		PDF 2SK758 O-220F 2SK963 2SK1478 A2SK2122 O-220E 2SK1036 2SK766 2SK2324 220E 2SK2129 2SK76 2sk203 2SK1606 2sk2128 2SK996 2SK1331

    Untitled

    Abstract: No abstract text available
    Text: Package Package No. 1Type (D44) N Type (D42) MT4 (D41) TO-22ÛF(a) (D55) TO-220E (D59) TOP-3(a) (D60) TOP-3F(a) (D63) TOP-3E (D65) TOP-3L (067) V dss (V) V gss (V) 500 ±20 2SK1406 2SK2509 2SK1833 2SK2125 2SK1608 2SK2126 ton typ (ns) 150 140 480 15 0.5 8


    OCR Scan     		PDF O-220E 2SK1406 A2SK2572 2SK1605 2SK1606 2SK2123 2SK2124 2SK1607 2SK2032 2SK2571