2SK2369
Abstract: 2SK2370 2SK236
Text: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistors 2SK2369,2370 NチャネルパワーMOS FET スイッチング用 2SK2369, 2370はNチャネル縦型 パワー MOS FETで，スイッチング特性が優れており，各種スイッチング電源用途
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2SK2369
2SK2369,
2370N
02SK23692SK2370
D13191JJ3V0DS00
D13191JJ3V0DS
MP-88)
2SK2370
2SK236
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k 2370
Abstract: 2SK2369 2SK2370 MP-88 PT1140
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2369,2370 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-Channel MOS Field Effect Transistors designed for high voltage switching applications. FEATURES • Low on-state resistance 2SK2369: RDS on = 0.35 Ω MAX. (VGS = 10 V, ID = 10 A)
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2SK2369
2SK2369:
2SK2370:
2SK2369/2370)
k 2370
2SK2370
MP-88
PT1140
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2SK2370
Abstract: 2SK2369 MP-88
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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2SK2369
Abstract: 2SK2370
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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2SK2369
2SK2369,
2370N
02SK23692SK2370
D13191JJ3V0DS
MP-88)
M8E02
2SK2370
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PDF
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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