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    2SK209 RANK O Search Results

    2SK209 RANK O Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SK2090-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    2SK2090-T2-A Renesas Electronics Corporation Power MOSFETs for Automotive, SSP, / Visit Renesas Electronics Corporation
    2SK2090(0)-T1-A Renesas Electronics Corporation Power MOSFETs for Automotive, SSP, / Visit Renesas Electronics Corporation

    2SK209 RANK O Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TC7SZ08FU

    Abstract: lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent
    Text: General-Purpose Small-Signal Surface-Mount Devices PRODUCT GUIDE CONTENTS 1. Package Information 3 to 6 2. Small Signal Transistors and Diodes 2.1 New Products 2.2 Small-Signal Transistors 2.3 Bias Resistor Transistora BRTs 6.1 Single Output type 6.2 Dual Output type


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    3407C-0209 TC7SZ08FU lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU SOT-24 te85l F TC7W04F 2sc2240 equivalent PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    5252 0.9V 1.5V led driver

    Abstract: 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators tc7wh125 5252 solar cell chip e 420 dual jfet TAH8N401K 2SK3376TT
    Text: 2004-9 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng CONTENTS 1. Package Information •·········································· 4 2. Small Signal Transistors


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    BCE0030A 5252 0.9V 1.5V led driver 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver lm2804 5-pin sot 353 Voltage Regulators tc7wh125 5252 solar cell chip e 420 dual jfet TAH8N401K 2SK3376TT PDF

    GT30J124

    Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    GT45F122

    Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
    Text: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 GT45F122 TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124 PDF

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322 PDF

    2SK209

    Abstract: No abstract text available
    Text: SILICON N CHANNEL JUNCTION TYPE A U D I O F RE Q UE NC Y APPLICATIONS. LOW N O I S E 2SK209 AMPLIFIER Unit in mm +0i5 ¿.5-0:3 FEATURES: . High + G? 5 1 . 5 —0. J 5 IYfs I : 1Yfs l=15ms Typ. EE- at Vpg=10V, VG g=0 +1 d . High Breakdown Voltage : VG [,c;=-50V


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    2SK209 SC-59 2SK209 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SK209 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK209 AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS Unit in mm + 0.5 2.5-0.3 H igh |Yfs| : |Yfs| = 15mS Typ. at VDS = 10V, VGS = 0 High Breakdown Voltage : VGj)g = —50V


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    2SK209 30k50k PDF

    2SK209

    Abstract: No abstract text available
    Text: T O S H IB A 2SK209 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK209 Unit in mm A U D IO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS h 0-5 2.5 - 0.3 H ig h |Y fs| : |Y f 8| = 15mS Typ. at VDS = 10V, VGS = 0 High Breakdown Voltage : VGj ) g = —50V


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    2SK209 O-236 SC-59 Ta-25Â PDF

    TC7WOOFU

    Abstract: TC7WU04FU TC4W66FU TC7WU04F tc7sh04fu
    Text: L-MOS M - 3 Gate C-MOS Series F6 Package SMV Appearance Function ht1!r _L^ ¡111 i 7 iC i mm) FM8 2. I T High-Speed Series VHS Series 1V Operate High-Speed Series Series TC7S00F TC7SH00FA TC7SL00F Tr I v A— yLnr 4 .5 / U r Standard Series SM8 If lJt.9


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    TC4S11F TC4SU11F TC4S81F TC4S01F TC4F71F TC4S30F TC7S08F TC7S02F TC7S32F TC7S86F TC7WOOFU TC7WU04FU TC4W66FU TC7WU04F tc7sh04fu PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK209 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K2 0 9 Unit in mm AU D IO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS High |Yfc| + 0.5 2 .5 -0 .3 : |Yfs| = 15mS Typ. at VDg = 10V, VGS = 0 + 0.25 .1 .5 -0 .1 5 High Breakdown Voltage : V<3Dg=—50V


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    2SK209 --50V --30V 961001EAA2' PDF